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    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7 T b 4 m 2 GDlSTOb 332 ■ KM44C1010B CMOS DRAM 1M X 4Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1010B is a high speed CMOS 1,048,576x4 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM44C1010B KM44C1010B 576x4 110ns KM44C101 130ns KM44C1010B-8 150ns KM44C1010B-6 20-LEAD

    ICT 20 PIN PLASTIC 300 MIL DIP

    Abstract: No abstract text available
    Text: KM44C1010B CMOS DRAM 1M X 4Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: I rac • • • • • • • • • • • tcAC tRC 110ns KM44C1010B-6 60ns 15ns KM44C1010B-7 70ns 20ns 130ns


    OCR Scan     		PDF KM44C1010B KM44C1010B-6 KM44C1010B-7 KM44C1010B-8 110ns 130ns 150ns KM44C1010B 576x4 ICT 20 PIN PLASTIC 300 MIL DIP

    1Mx4

    Abstract: 20-PIN KM44C1000BLT KM44C1002BJ
    Text: M E M O R Y IC s FUNCTION G UIDE Dynamic RAM Continued Capacity 4 M bit Part Number Organization KM44C1000BZ 1Mx4 1Mx4 1Mx4 KM44C1000BT KM44C1000BTR KM44C1OOOBV KM44C1000BVR 1Mx4 Speed(ns) CMOS Fast Page CMOS CMOS CMOS CMOS Fast Page Fast Page Fast Page


    OCR Scan     		PDF KM44C1000BZ KM44C1000BT KM44C1000BTR KM44C1OOOBV KM44C1000BVR KM44C1000BLP KM44C1000BU KM44C1000BLZ KM44C1000BLT KM44C1000BLTR 1Mx4 20-PIN KM44C1002BJ