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    Samsung Semiconductor KM416V256BT-7

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    Bristol Electronics KM416V256BT-7 785
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    Chip 1 Exchange KM416V256BT7 77
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    KM416V256BL

    Abstract: KM416V256BT
    Text: KM416V256B/BL/BLL CMOS DRAM 256K \ 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION The S a m sun g K M 4 1 6 V 2 5 6 B /B L /BLL is a C M O S high • P erform ance range: tR A C tCAC tR C KM416V256B/BLÆLL-6 60ns 15ns 110ns KM416V256B/'BL'BLL-7


    OCR Scan     		KM416V256B/BL/BLL KM416V256BL KM416V256BT PDF

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    Abstract: No abstract text available
    Text: KM416V256B/BL/BLL CMOS DRAM 256K x1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KM416V256B/BL7BL1 is a CMOS high speed 262,14 4 b it \ 16 D ynam ic R andom A cce ss M e m ory. Its d e s ig n is o p tim iz e d fo r iow p o w e r


    OCR Scan     		KM416V256B/BL/BLL KM416V256B/BL7BL1 KM416V256B/BIVBLL-6 110ns KM416V256B/BIVBLL-7 130ns KM416V256B/BL7BLL-8 150ns KM416V256B/B PDF