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    Samsung Semiconductor KM416V1200BT-L6

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    KM416V1200B Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416V1200B Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416V1200BJ-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1200BJ-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM416V1200BJ-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF
    KM416V1200BJL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1200BJL-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM416V1200BJL-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF
    KM416V1200BT-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1200BT-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM416V1200BT-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF
    KM416V1200BTL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1200BTL-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM416V1200BTL-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF

    KM416V1200B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C1000B

    Abstract: KM416C1000B KM416C1200B KM416V1000B KM416V1200B C-1000B C1200B
    Text: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5,-6 or -7), power


    Original     		PDF KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 16Bit 1Mx16 C1000B KM416C1000B KM416C1200B KM416V1000B KM416V1200B C-1000B C1200B

    Untitled

    Abstract: No abstract text available
    Text: KMM332V204BT-L KMM332V224BT-L DRAM MODULE KMM332V204BT-L & KMM332V224BT-L with Fast Page Mode 2M x 32 DRAM SODIMM, using1MX16, 4K & 1K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V20 2 4BT is a 2M x 32 bits Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM332V204BT-L KMM332V224BT-L KMM332V224BT-L using1MX16, KMM332V20 1Mx16bits 44-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B Preliminary CMOS DRAM 1Mx16 Bi t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CM O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1Mx16 DG23333

    Untitled

    Abstract: No abstract text available
    Text: KM416V1200BJ CMOS D R A M ELECTRONICS 1 M x 1 6 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416V1200BJ 1Mx16 416V1200BJ) 003072D 3D721

    Untitled

    Abstract: No abstract text available
    Text: KM416V1200BT CMOS DRAM ELECTR O NICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416V1200BT 1Mx16Bit 1Mx16 band-w25 5CK44 -TSOP2-400R

    C-1000B

    Abstract: No abstract text available
    Text: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B Preliminary CMOS DRAM 1 Mx16 Bi t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1Mx16 C-1000B

    C1000B

    Abstract: 3020C
    Text: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000BT 16Bit 1Mx16 7Tb4142 DD3D23b C1000B 3020C

    Untitled

    Abstract: No abstract text available
    Text: KM416V1000BJ CMOS D RA M ELECTRONICS 1 Mx 1 6 B i t CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416V1000BJ 1Mx16 40SOJ

    Untitled

    Abstract: No abstract text available
    Text: KM 4 1 6 C 1 2 0 0 B T CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF DQ0-DQ15 00303bS KM416C1200BT Tb4142 KM416C1200BT)

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


    OCR Scan     		PDF 256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference

    Untitled

    Abstract: No abstract text available
    Text: KM416V1000BT CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416V1000BT 1Mx16 1000BT) 7Tb4142 GG30b2b

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000BJ CMOS DRAM ELECTRONICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode D ESC R IPT IO N This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000BJ 1Mx16Bit 1Mx16 71bm4E 16C1000BJ 40SOJ 1000B

    Untitled

    Abstract: No abstract text available
    Text: KM416C1200BJ C M O S DRAM ELECTRO NICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1200BJ 1Mx16 7Tb414E GD3D331

    C1000B

    Abstract: KM416CI200BJ
    Text: KM416C1200BJ CMOS DRAM ELECTRONICS 1M x 1 6 B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1200BJ 1Mx16 40SOJ C1000B KM416CI200BJ

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM332V104BT-L KMM332V124BT-L DRAM MODULE KMM332V104BT-L & KMM332V124BT-L Fast Page Mode 1Mx32 DRAM DIMM, Low Power, 4K & 1K Refresh, 3.3V G ENER AL FEATURES D ESCRIPTIO N The Samsung KMM332V10 2 4BT is a 1M bit x 32 D ynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM332V104BT-L KMM332V124BT-L KMM332V104BT-L KMM332V124BT-L 1Mx32 KMM332V104BT-L6/L7 cycles/128ms 60/70ns) 332V124BT-L6/L7

    Untitled

    Abstract: No abstract text available
    Text: KMM332V104BT-L KMM332V124BT-L DRAM MODULE KMM332V104BT-L & KMM332V124BT-L with Fast Page Mode 1M x 32 DRAM SODIMM, 4K & 1K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KM M 332V10 2 4BT is a 1M x 32 bits Dynamic Part Identification


    OCR Scan     		PDF KMM332V104BT-L KMM332V124BT-L KMM332V104BT-L KMM332V124BT-L 332V10 1Mx16bits 44-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000BT C MOS DR A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000BT 1Mx16 000BT GD3D53b

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM332V104BT-L KMM332V124BT-L DRAM MODULE KMM332V104BT-L & KMM332V124BT-L Fast Page Mode 1Mx32 DRAM DIMM, Low Power, 4K & 1K Refresh, 3.3V G ENERAL FEATURES DESCRIPTIO N The Samsung KMM332V10 2 4BT is a 1M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM332V104BT-L KMM332V124BT-L KMM332V124BT-L 1Mx32 KMM332V10 1Mx16bit 44-pin 72-pin

    C1000B

    Abstract: I22S stt 300
    Text: K M 4 1 6 V l O O O BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CM OS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416V 16Bit 1Mx16 HMH01EJHBSH0IHBII KM416V1000BT) C1000B I22S stt 300

    KM416C60-7

    Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
    Text: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55


    OCR Scan     		PDF KM41C1000D-6 KM41C1000D-7 KM41C1000D-8 KM41C1000D-L6 KM41C1000D-L7 KM41C1000D-L8 KM48C124-55 KM48C124-6 KM416C60-6 KM416C64-6 KM416C60-7 KM48C2104B KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7

    km44c2560

    Abstract: KM48V2104B-6 KM44C16004A-5
    Text: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8


    OCR Scan     		PDF KM41C1000D-6 KM41C1000D-L6 KM41C1000D-7 KM41C1000D-L7 KM44C256D-7 KM44C256D-L7 KM41C1000D-8 258KX4 KM44C2560-6 km44c2560 KM48V2104B-6 KM44C16004A-5

    C1000B

    Abstract: C-1000B
    Text: KM416C1200BT ELECTRONICS C MO S D R A M 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1200BT 16Bit 1Mx16 KM416C1200BT) 7Tb414E C1000B C-1000B

    04BJ

    Abstract: I2142 v10204b
    Text: KM416C1004B, KM416C1204B KM416V1004B, KM416V1204B Preliminary CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416C1004B, KM416C1204B KM416V1004B, KM416V1204B 16Bit 1Mx16 04BJ I2142 v10204b