KM29U64000IT
Abstract: KM29U64000T 400F
Text: KM29U64000T, KM29U64000IT FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to cha nge the
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KM29U64000T,
KM29U64000IT
KM29U64000IT
KM29U64000T
400F
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Untitled
Abstract: No abstract text available
Text: KM29U64000IT-T 1/2 IL08 8 M x 8-BIT NAND FLASH MEMORY —TOP VIEW— 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 INPUTS : ALE : CE : WE CLE : : RE : SE : WP 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 ADDRESS LATCH ENABLE
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KM29U64000IT-T
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400F
Abstract: KM29U64000IT KM29U64000T
Text: KM29U64000T, KM29U64000IT FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final 1.1 Data Sheet. 1999 April 10th 1999
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KM29U64000T,
KM29U64000IT
KM29U64000Iommand
400F
KM29U64000IT
KM29U64000T
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KM29U64000IT
Abstract: KM29U64000T 400F K9F6408U0M-TCB0 K9F6408U0M-TIB0
Text: K9F6408U0M-TCB0, K9F6408U0M-TIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final 1.1 Data Sheet. 1999
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K9F6408U0M-TCB0,
K9F6408U0M-TIB0
KM29U64000T
K9F6408U0M-TCB0
KM29U64000IT
400F
K9F6408U0M-TCB0
K9F6408U0M-TIB0
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Untitled
Abstract: No abstract text available
Text: KM29U64000T, KM29U64000IT FLASH MEMORY D o c u m e n t T if ie 8M X 8 Bit NAND Flash Memory R e v is io n H S s io r v Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final 1.1 Data Sheet. 1999
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KM29U64000T,
KM29U64000IT
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Untitled
Abstract: No abstract text available
Text: KM29U64000T, KM29U64000IT FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th Final 1998 The attached datasheets are prepared and approved by SA M S U N G Electronics. SAM SU N G Electronics CO., LTD. reserve the right to c h an g e the
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KM29U64000T,
KM29U64000IT
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Untitled
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY KM29U64000T, KM29U64000IT 8M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Voltage Supply : 2.7V ~ 3.6V • Organization - Memory Cell Array : 8M ♦ 256K bit x 8bit - Data Register : (512 + 16)bit x8b# • Automatic Program and Erase
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KM29U64000T,
KM29U64000IT
528-Byte
200ns
KM29V64000
KM29N64000
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TSOP 48 Package nand memory
Abstract: NAND flash memory nor flash 1Mx16 flash TSOP I KM29N040T KM28U800
Text: 1. INTRODUCTION <NOR FLASH MEMORY> <NAND FLASH MEMORY> 2. PRODUCT GUIDE < NOR FLASH MEMORY > Density Org. Supply 2.7V-3.6V 8M bit 16M bit Part Number KM28U800 Features 2Mx8 1Mx16 4.5V-5.5V KM28N800 55/70/90 2.7V-3.6V KM28U160 80/90/120ns Package Standard Temp.
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512KX
1Mx16
KM28N800
KM28U800
90/100/120ns
48CSP
KM28U160
80/90/120ns
KM29U128T
KM29U128IT
TSOP 48 Package nand memory
NAND flash memory
nor flash
1Mx16 flash
TSOP I
KM29N040T
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