Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E » • 7c b m 4 2 GG17034 70S « S N 6 K KM23C8005B G) CMOS MASK ROM 8M-Bit (1M x8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576 x 8 bit organization • Fast access time Random access: 100ns (max.) Page access: 50ns (max.)
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GG17034
KM23C8005B
100ns
32-pin,
KM23C80Q5B
D017037
KM23C8005B)
KM23C8005BG)
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Untitled
Abstract: No abstract text available
Text: KM23C8005B G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576 x 8 bit organization • Fast access time Random access: 100ns (max.) Page access: 50ns (max.) • Supply voltage: singlè + 5V • Current consumption Operating : 80 mA(max.)
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KM23C8005B
100ns
32-pin,
KM23C8005B)
KM23C8005BG)
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al 232 nec
Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258
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KM41C256
KM41C257
KM41C258
KM41C464
KM41C466
KM41C1000
KM41C1001
KM41C1002
KM44C256
KM44C258
al 232 nec
TC55B4257
MB832001
NM9306
eeprom Cross Reference
D41264
TC5116100
HN28C256
NM9307
oki cross reference
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KM23C8001
Abstract: 32-sop
Text: MEMORY ICs FUNCTION GUIDE 2.6 MASK ROM Capacity Part Number Orgrization Speed ns Tech. Features Package Remark 256K KM23C256(G) 32Kx8 120/150/200 CMOS Programmable C E & OE 28DIP(32SOP) Now 512K KM23C512(G) 6 4 K *8 120/150/200 CMOS Programmable C E & O E
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KM23C256
KM23C512
KC23C1000
KM23C1001
KM23C1010
KM23C1010J
KM23C1011
32Kx8
128Kx
256KX
KM23C8001
32-sop
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