Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KM23C8000D Search Results

    KM23C8000D Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM23C8000D-10 Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF
    KM23C8000D-12 Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF
    KM23C8000D-15 Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF
    KM23C8000DG-10 Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF
    KM23C8000DG-12 Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF

    KM23C8000D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KM23C8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 1,048,576 x 8 bit organization Fast access time : 100ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)


    Original     		PDF KM23C8000D 100ns KM23C8000D 32-DIP-600 KM23C8000DG 32-SOP-525 118MAX 822MAX

    32-SOP-525

    Abstract: No abstract text available
    Text: KM23C8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576 x 8 bit organization • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)


    Original     		PDF KM23C8000D 100ns KM23C8000D 32-DIP-600 KM23C8000DG 32-SOP-525 32-SOP-525

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23C8000D G 8M-Bit (1 Mx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES 1,0 48,576 x 8 bit org an izatio n Fast access tim e :1 0 0 n s (m a x .) S up ply vo lta g e : sin gle +5V C u rrent con sum p tion O perating : 50m A (m ax.) S ta n d b y


    OCR Scan     		PDF KM23C8000D

    mask rom

    Abstract: No abstract text available
    Text: KM23C8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION . . . . The KM23C8Q00D(G) is a fully static mask programmable ROM organized 1,048,576 x 8 bit. It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all


    OCR Scan     		PDF KM23C8000D 100ns KM23C8000D IP-600 KM23C8000DG 32-SOP-525 KM23C8Q00D 100pF mask rom

    MQ4A

    Abstract: 32-SO
    Text: KM23C8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C8000D(G) is • • • • 1,048,576 x 8 bit organization Fast access tim e : 100ns(M ax.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.)


    OCR Scan     		PDF KM23C8000D 100ns 23C8000D 32-DIP-600 23C8000DG 32-SO P-525 23C8000D 32-DIP-600) MQ4A

    Untitled

    Abstract: No abstract text available
    Text: KM23C8000P G CMOS MASK ROM 8M-Bit (1Mx8) CMOS M ASK ROM FEATURES G EN ERA L DESCRIPTION • 1,048,576 x 8 bit organization • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating: 50mA(Max.) Standby : 50fiA(Max.)


    OCR Scan     		PDF KM23C8000P 100ns 50fiA KM23C8000D 32-DIP-600 8000D 32-SOP-525 KM23C8000D 100pF

    Untitled

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16


    OCR Scan     		PDF KM23C4000D KM23C4100D KM23C41 KM23V64000T. KM23V64005AG KM23V64005ATY. KM23V64205ASG KM23SV32205T

    48TSOP1

    Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
    Text: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15


    OCR Scan     		PDF 512KX8 KM23C400QD KM23C4QOOD KM23C4Q00D KM23C40QQD TY-10 KM23C4000D 7Y-12 KM23V4000D 48TSOP1 MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12