Untitled
Abstract: No abstract text available
Text: KM23C4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)
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KM23C4200D
256Kx16)
40-DIP-600
KM23C4200D
KM23C4200D-12
40-DIP-600)
015MIN
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KM23C4200D-10
Abstract: KM23C4200D-12 KM23C4200D-8
Text: KM23C4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)
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Original
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PDF
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KM23C4200D
256Kx16)
40-DIP-600
KM23C4200D
015MIN
KM23C4200D-10
KM23C4200D-12
KM23C4200D-8
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KM23C4200D-12
Abstract: KM23C4200D-10 KM23C4200D-8 40-DIP-600 A1726 40DIP600
Text: KM23C4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)
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Original
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PDF
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KM23C4200D
256Kx16)
40-DIP-600
KM23C4200D
015MIN
KM23C4200D-12
KM23C4200D-10
KM23C4200D-8
40-DIP-600
A1726
40DIP600
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Untitled
Abstract: No abstract text available
Text: CMOS MASK ROM KM23V4200D 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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PDF
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KM23V4200D
256Kx16)
100ns
120ns
40-DIP-600
KM23V4200D
40-DIP-600)
015MIN
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40-DIP-600
Abstract: 40DIP600 KM23V4200D
Text: CMOS MASK ROM KM23V4200D 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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PDF
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KM23V4200D
256Kx16)
100ns
120ns
40-DIP-600
KM23V4200D
015MIN
40-DIP-600
40DIP600
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Untitled
Abstract: No abstract text available
Text: KM23C4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES The KM 23C4200D is a fully static m ask program m able ROM >262,144 x 16 bit organization > Fast access tim e : 80ns(M ax.) >Supply voltage : single +5V > Current consumption
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KM23C4200D
256Kx16)
23C4200D
23C4200D
40-DIP-600
40-DIP.
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mask rom
Abstract: No abstract text available
Text: KM23C4200D CMOS MASK ROM 4M-Bit 256KX16 CMOS MASK ROM (EPROM TYPE) FEATURES • • • • • • • • GENERAL D ESCRIPTIO N 262,144 x 16 bit organization Fast access time : 80ns(Max.) Supply voltage : single +5V Current consumption Operating : SOmA(Max )
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OCR Scan
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PDF
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KM23C4200D
256KX16)
40-DIP-600
KM23C4200D
100pF
KM2JC4200D-S
KM23C4200D-10
KM23C42000-12
mask rom
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Untitled
Abstract: No abstract text available
Text: KM23C4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • • • • • • • • The KM 23C4200D is a fully static m ask program m able ROM 262,144 x 16 bit organization Fast access tim e : 80ns(M ax.) Supply voltage : single +5V
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OCR Scan
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PDF
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KM23C4200D
256Kx16)
23C4200D
40-DIP-600
23C4200D
KM23C4200D-8
KM23C4200D-10
KM23C4200D-12
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Untitled
Abstract: No abstract text available
Text: KM23V4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES 26 2,14 4 x 16 bit organ izatio n Fast access tim e :1 0 0 n s (m a x .) S up ply vo lta g e : sin gle +3.3V C urrent con sum p tion O perating : 25m A (m ax.) S tandby iS O S ^m a x.)
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PDF
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KM23V4200D
256Kx16)
4200D
40-DIP-600C
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Untitled
Abstract: No abstract text available
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16
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KM23C4000D
KM23C4100D
KM23C41
KM23V64000T.
KM23V64005AG
KM23V64005ATY.
KM23V64205ASG
KM23SV32205T
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4200d
Abstract: No abstract text available
Text: KM23V4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES 26 2,14 4 x 16 bit organ izatio n Fast access tim e :1 0 0 n s (m a x .) S up ply volta ge : single +3.3V C urrent con sum p tion O perating : 25m A (m ax.) S tandby :3 0 § ,(m a x .)
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PDF
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KM23V4200D
256Kx16)
4200D
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48TSOP1
Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
Text: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15
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512KX8
KM23C400QD
KM23C4QOOD
KM23C4Q00D
KM23C40QQD
TY-10
KM23C4000D
7Y-12
KM23V4000D
48TSOP1
MX* 64M-Bit eprom
TY15
km23c32000cg-10
23v322
KM23C16205BSG-10
7Y12
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