Untitled
Abstract: No abstract text available
Text: KM23C32000C E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption
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Original
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KM23C32000C
32M-Bit
/2Mx16)
304x8
152x16
100ns
44-TSOP2-400
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PDF
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MASK ROM 32M PROGRAM 5V
Abstract: No abstract text available
Text: KM23C32000C E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption
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Original
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KM23C32000C
32M-Bit
/2Mx16)
304x8
152x16
100ns
44-TSOP2-400
MASK ROM 32M PROGRAM 5V
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PDF
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KM23C32000C-10
Abstract: KM23C32000C-12
Text: KM23C32000C CMOS MASK ROM 32M-Bit 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation
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Original
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KM23C32000C
32M-Bit
2Mx16)
152x16
100ns
42-DIP-600
KM23C32000C
KM23C32000C-10
KM23C32000C-12
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PDF
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KM23C32000CG-12
Abstract: KM23C32000CG-15 km23c32000cg-10
Text: KM23C32000CG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption
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Original
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KM23C32000CG
32M-Bit
/2Mx16)
304x8
152x16
100ns
44-SOP-600
KM23C32000CG
KM23C32000CG-12
KM23C32000CG-15
km23c32000cg-10
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PDF
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km23c
Abstract: MASK ROM 32M PROGRAM KM23C32000C-10 KM23C32000C-12
Text: KM23C32000C CMOS MASK ROM 32M-Bit 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation
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Original
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KM23C32000C
32M-Bit
2Mx16)
152x16
100ns
42-DIP-600
KM23C32000C
km23c
MASK ROM 32M PROGRAM
KM23C32000C-10
KM23C32000C-12
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM23C32000G CMOS MASK ROM 32M-Bit 4M x8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption
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OCR Scan
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KM23C32000G
32M-Bit
150ns
100fiA
44-pin,
KM23C32000G
KM23C32000G)
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PDF
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Untitled
Abstract: No abstract text available
Text: KM23C32000A CMOS Ma sk ROM ELECTRONICS 32M-Bit 2M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000A is a fully static mask programmable ROM organized 2,097,152x16bit.lt is fabricated using silicon-gate CMOS process technology.
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OCR Scan
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KM23C32000A
32M-Bit
KM23C32000A
152x16bit
42-DIP
16bit
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PDF
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23C32000
Abstract: No abstract text available
Text: KM23C32000AG C MOS M a s k R OM ELECTRONICS 32M-BH 4M X 8/2M X 16 CMOS MASK ROM • Switchable organization 4,194,304 x8(byte mode) 2,097,152 x16(word mode) • Fast access time : 120ns (Max.) • Supply voltage : single +5V • Current consumption Operating : 60 mA(max.)
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OCR Scan
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KM23C32000AG
32M-BH
120ns
32000AG
P-600
23C32000AG
304x8bit
152x16bit
0D313SQ
23C32000
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PDF
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23C32000
Abstract: 23C32000CT 23c3200
Text: KM23C32000C E T_ CMOS MASK ROM 32M-Bit (4Mx8 2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V
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OCR Scan
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KM23C32000C
32M-Bit
2Mx16)
304x8
152x16
100ns
23C32000C
44-TSQ
P2-400
23C32000
23C32000CT
23c3200
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PDF
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Untitled
Abstract: No abstract text available
Text: KM23C32000C E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time ; 100ns(Max.) • Supply voltage : single +5V • Current consumption
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OCR Scan
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KM23C32000C
32M-Bit
/2Mx16)
304x8
152x16
100ns
KM23C32Q00C
44-TSOP2-400
100pF
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS MASK ROM KM23C32000C 32M-Bit 2Mx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES 12,097,152x16 bit organization 1 Fast access time : 100ns(Max.) 1Supply voltage : single +5V 1Current consumption Operating : 50mA(Max.) Standby : 50|^A(Max.)
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OCR Scan
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KM23C32000C
32M-Bit
2Mx16)
152x16
100ns
42-DIP-600
KM23C32000C
KM23C32000C-12
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY : m o s MASK ROM KM23C32000 32M-BH 2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000 Is a fu lly s tatic mask programmable ROM organized 2,097,152 x 16 bit. It is fabricated using s ilic o n gate CMOS process technolgy.
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OCR Scan
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KM23C32000
32M-BH
KM23C32000
150ns
100/iA
42-pin,
KM23C32000)
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PDF
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Untitled
Abstract: No abstract text available
Text: / P R E LIM IN A R Y >/ KM23C32000 : m o s MASK ROM 32M-BH 2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152 x 16 bit organization The KM23C32000 is a fully static mask programmable ROM organized 2,097,152 x 16 bit It is fabricated using s ilic o n gate CMOS process te ch n o lg y
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OCR Scan
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KM23C32000
32M-BH
150ns
KM23C32000
KM23C32000)
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PDF
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Untitled
Abstract: No abstract text available
Text: KM23C32000G CMOS MASK ROM 32M-BH 4M x 8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5 V • Current consumption
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OCR Scan
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KM23C32000G
32M-BH
150ns
KM23C32000G
152x16
easy150
KM23C32000G)
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7Rb4142 0017112 THS KM23C32000G CMOS MASK ROM 32M-BH 4M x8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.)
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OCR Scan
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7Rb4142
KM23C32000G
32M-BH
150ns
44-pin,
KM23C32000G
7Tb4142
DD1711S
KM23C32000G)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary KM23C32000C E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption
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OCR Scan
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KM23C32000C
32M-Bit
/2Mx16)
304x8
152x16
100ns
44-TSOP2-4QO
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PDF
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Untitled
Abstract: No abstract text available
Text: P R E LIM IN A R Y KM23C32000FP CMOS MASK ROM 32M-Bit 4M x 8 /2 M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.) • Supply tfbltage: single + 5 V
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OCR Scan
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KM23C32000FP
32M-Bit
150ns
100fiA
64-pin
KM23C32000FP
KM23C32000FP)
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PDF
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23C32000
Abstract: No abstract text available
Text: CMOS MASK ROM KM23C32000C 32M-Bit 2Mx16 CMOS MASK ROM FEATURES G ENER AL DESCRIPTIO N • • • • The KM 23C32000C is a fully static m ask program m able ROM • • • • 2,097,152x16 bit organization Fast access tim e : 100ns(Max.) Supply voltage : single +5V
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OCR Scan
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KM23C32000C
32M-Bit
2Mx16)
152x16
100ns
23C32000C
42-DIP-600
23C32000C
23C32000
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PDF
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23c3200
Abstract: 23C32000
Text: CMOS MASK ROM KM23C32000CG 32M-Bit 4Mx8 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • Current consumption
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OCR Scan
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KM23C32000CG
32M-Bit
2Mx16)
304x8
152x16
100ns
23C32000CG
44-SQ
P-600
23C32000CG
23c3200
23C32000
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PDF
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Untitled
Abstract: No abstract text available
Text: KM23C32000CG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16{word mode) « Fast access time : 1Q0ns(Max.) • Supply voltage : single +SV • Current consumption
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OCR Scan
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KM23C32000CG
32M-Bit
/2Mx16)
304x8
152x16
KM23C32000CG:
44-30P-500
KM23C32000CG
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PDF
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Untitled
Abstract: No abstract text available
Text: SAttSUNG E L E C T R O N I C S INC b7E » • 7 T b m t4E ODlTlDfl 5T4 I SPICK C M O S MASK R OM KM23C32000 32M-BH 2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000 is a fully static mask programmable ROM organized 2,097,152 x 16 bit. It is fabricated using
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OCR Scan
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KM23C32000
32M-BH
KM23C32000
150ns
42-pin,
KM23C32000)
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PDF
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23C3200
Abstract: 23C32000
Text: KM23C32000C CMOS MASK ROM 32M-Bit 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating: 50mA(Max.) Standby : 50(jA(Max.) • Fully static operation
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OCR Scan
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KM23C32000C
32M-Bit
2Mx16)
152x16
100ns
42-OIP-600
KM23C32000C
100pF
23C3200
23C32000
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM23C32000FP CMOS MASK ROM 32M-BH 4M x 8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.) • Supply Vbltage: single + 5V • Current consumption
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OCR Scan
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KM23C32000FP
32M-BH
150ns
64-pin
KM23C32000FP
152x16
KM23C32000FP)
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PDF
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KM23C32000
Abstract: 123Q4
Text: KM23C32000 CMOS MASK ROM 32M-Bit 2 M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000 is a fully static m ask programmable ROM organized 2,097,152 x 16 bit. It is fabricated using s ilic o n gate CMOS process tech nolgy. •
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OCR Scan
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KM23C32000
32M-Bit
150ns
42-pin,
KM23C32000
KM23C92000
KM23C32000)
123Q4
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PDF
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