CXD1255Q
Abstract: cxa1337 cx-7925b sony frequency synthesizer pll ILX501 lhi 778 cn/A/U 237 BG CXD1149 Semicon volume 1 IU02 icx024
Text: Semiconductor IC Semiconductor Integrated Circuit Data Book 1992 List of Model Names/ Index by Usage Description CCD Image Sensor Color CCD Image Sensor (Black/White) CCD Image Sensor System Scanning System IC for Video Camera Signal Processing IC for Video
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DE91Z22-HP
CXD1255Q
cxa1337
cx-7925b sony frequency synthesizer pll
ILX501
lhi 778
cn/A/U 237 BG
CXD1149
Semicon volume 1
IU02
icx024
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sd48000001
Abstract: 2254* molex molex sata connector
Text: 10 1 NOTES : 1.MATERIAL : HOUSING : TERMAL PLASTIC,30% G.F.,BLACK,UL94V-0 TERMINAL : COPPER ALLOY 2.TERMINAL PLATING : CONTACT AREA : GOLD PLATING, 0.1 MICROMETER MIN. SOLDER AREA : TIN PLATING. 1.0 MICROMETER MIN. UNDERPLATING : NICKEL PLATING. 1.5 MICROMETER MIN.
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UL94V-0
SD-48000-001
sd48000001
2254* molex
molex sata connector
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TH 2190 Transistor
Abstract: BSV62 BSY62 TRANSISTOR K 2191 BSV18 BSY17 BSY18 BSY63 Q60218-Y17 Q60218-Y18
Text: 2SC » • ÖS3SbDS 0QG4fl24 3 « S I E G j NPN Transistors for Switching Applications n -SIEMENS AKTIENGESELLSCHAF . B S Y17 BSY 18 BSY62 BSY 63 BSY 17, BSY 18, BSY 62, and BSY 63 are double-diffused epitaxial NPN silicon planar RF transistors in TO 18 case 18 A 3 DIN 41876 . Their collectors are electrically connected
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00G4fl24
BSY62
Q60218-Y17
Q60218-Y18
Q60218-Y62-A
Q60218-Y62-B
Q60218-Y63
Coll4830
QT-35-
BSY18
TH 2190 Transistor
BSV62
BSY62
TRANSISTOR K 2191
BSV18
BSY17
BSY63
Q60218-Y17
Q60218-Y18
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KJh transistor
Abstract: No abstract text available
Text: 1DI75E-055 75 a • Outline Drawings 3.-JV POWER TRANSISTOR MODULE • Î tfS : Features • S iE H igh V o lta g e 'sW-ilt— Kf*3JR • 7U — • A S O /^ /a ^ • ll<ikM In c lu d in g Free W h e e lin g D io d e Excellent Safe O p e ra tin g Area Insulated Type
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1DI75E-055
E82988
095t/R89
KJh transistor
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2MB150
Abstract: 2MBI50L-060 B150 T151 T930
Text: 2MBI50L-060 5 oa Ä ± /< 7 ” * i> z L -)V : Outline Drawings IG B T ^ i- J U IGBT MODULE ’ Features High Speed Switching • Low Saturation Voltage • S A h iStffciMOS-ir — M B it) High Input Impedance • i i>n. —)W *v4r —i? Module Packaging
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2MBI50L-060
19S24-%
I95t/R89)
Shl50
2MB150
B150
T151
T930
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BB 722
Abstract: No abstract text available
Text: LTR. ED4 □WE W IL AY ÍS S 2 A D D -1 0 1 r o TABLE 1 «/Z9/0Q TS AZ 105Ô REVISE NOTE lr 45 NYLON WAS POLYESTER 1 /3 4 /» TB BA 1559 Am i / I 4 /t> TS BB 165& AOP P -POSITION #1 J54-7î à f f i U U IW IIM P / f l LEDCM> REUS CDWriWMT? TD P /tl LEBEND
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J54-7î
CC14LA
J125M
DOD005
OOD100
10/13/M
BB 722
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ME 1117
Abstract: BV 201 0146 TP8-10 GS74108J GS74108TP 370al
Text: CII UCJINOIOCU GS74108J/TP 8/10/12/15,3.3V GS74108J/TP 512K x 8 Asynchronous Center Power Center Ground Features Functional Description • Fast access time: 8, 10, 12, 15ns. • Low Operating Current - 150/125/110/90 mA at minimum cycle time. • Single 3.3V +10%/-5% power supply.
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GS74iomp
400mil,
GS74108
288-words
ME 1117
BV 201 0146
TP8-10
GS74108J
GS74108TP
370al
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Untitled
Abstract: No abstract text available
Text: CII U C J I N O I O C U 512K x 8 Asynchronous GS74108J/TP 8/10/12/15,3.3V GS74108J/TP Center Power Center Ground Features Functional Description • Fast access time: 8, 10, 12, 15ns. • Low Operating Current - 150/125/110/90 mA at minimum cycle time. • Single 3.3V +10%/-5% power supply.
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GS74108J/TP
400mil,
GS74108
288-words
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CAW-18
Abstract: megatron
Text: High-Performance 64Kx8 3.3V CMOS SRAM PI ^ ¿ 9 ^ AS7C3512 AS7C3512L P R E L IM IN A R Y Low Voltage 64Kx8 CMOS SRAM Common I/O |F E A T U R E S_ • Organization: 65,536 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply
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AS7C3512
64Kx8
AS7C3512L
32Jose,
CAW-18
megatron
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SCBE2
Abstract: AD21H SCBE3 SCBE-2 SCBe-1 71719 sn 16862 SCBE 2 DC1031 SAD 512
Text: O 'ÖsCfcjcM o'Ö tiojasti “ >5 0 >13 fl û i i corara mm »I » û » MEMW2M o c o o o h o p H w F o o I I I W I f tr1Ir1M ir1tr1 * *< rt g C a • » n o p-h » rtK i'OKt l rt Bo9« hI)ii * i;< rtao cín u ^í: t * n o > H s rs rs û 3 n 7 n t> ¡t
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MACH21O
13-223X2
10-240S3-01
K-DD-5424331-0-0
EB52/EB152
SCBE2
AD21H
SCBE3
SCBE-2
SCBe-1
71719
sn 16862
SCBE 2
DC1031
SAD 512
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Untitled
Abstract: No abstract text available
Text: • ^ 4 1 7 4 3 000b732 Oflb Advance Information X84F016/008 16K/8K MPS Serial Flash Micro Port Saver SerialFlash with Block Lock™ Protection FEATURES • Direct Interface to Micros — Eliminates I/O port requirements — No interface glue logic required
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000b732
X84F016/008
16K/8K
20-LEAD
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fa 5542
Abstract: EIA-RS-449 sipex 485 ec SPS22 rs 303 422
Text: C in a v u iiJW A SP522/524 Corporation ▼ SIG NAL PR O C E SSIN G E X C EL LE N C E M u lt i- P r o t o c o l S e r ia l T r a n s c e iv e r • SP522 — 2 Drivers and 2 Receivers ■ SP524 — 4 Drivers and 4 Receivers ■ Driver and Receiver Tri-State Control
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SP522/524
SP522
SP524
-RS-232
RS-423
-RS-422
RS-485
SP522/524
E522/5^
SP504
fa 5542
EIA-RS-449
sipex 485 ec
SPS22
rs 303 422
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f90l
Abstract: SDA0810
Text: SIEMENS Microprocessor-Compatible 10-Bit A/D Converters with 8-Channel Multiplexer SDA 0810 SDA 1810 P re lim in a ry D ata A C M O S IC F eatures • • • • • • • • • • • • • A d va n ce d C M O S AC M O S te ch no lo g y 10-bit resolution
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10-Bit
IP-28
f90l
SDA0810
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D17fn
Abstract: F59L fsq 51o CCIR-624 CCIR-656 PLCC68 SAA7151B SAA7188A Y043
Text: Philips Semiconductor Video Products Preliminary specification Digital video encoder DENC2-M SAA7188A FEATURES Quick Reference Data • M onolithic CM OS 5V device • D igital PAL/NTSC encoder • System Pixel Frequency: 13.5 M H z • A ccepts M PEG decoded data.
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SAA7188A
16-bit
SAA7188A
TSG422
CCIR656
110A5b
007bb7E
D17fn
F59L
fsq 51o
CCIR-624
CCIR-656
PLCC68
SAA7151B
Y043
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phase controller L120
Abstract: bitch 28F008SA
Text: SHARP PRODUCT PREVIEW LH28F004SCH-L 4-MBIT 512 KB X 8 SmartVoltage Flash MEMORY SmartVoltage Technology — 2.7V(Read-Only), 3.3V or 5V VCc — 3.3V, 5V or 12V VPP • SRAM-Compatibte Write Interface ■ Hlgh-Density Symmetrically-Blocked Architecture — eight 64-Kbyte Erasable Blocks
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LH28F004SCH-L
40-Lead
44-Lead
48-Lead
64-Kbyte
120ns
150ns
170ns
phase controller L120
bitch
28F008SA
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MF Electronics crystal oscillator m1200
Abstract: Photo sensitive diode Siemens diode Ssi K28 0/Siemens diode Ssi K28 d313 TRANSISTOR equivalent 74LS00 ir led PHOTODIODE transistor d313 pinout Analog Applications Journal 10B12B
Text: a Am79168/Am79169 TAXI -275 T echnical M anual Advanced Micro Devices Am79168/Am79169-275 TAXI-275 Integrated Circuits T e c h n ic a l M a n u a l Rev. 1.0, 1993 A D V A N C E D M I C R O D E V I C E S El 1993 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products
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Am79168/Am79169
TAXITM-275
Am79168/Am79169-275
TAXI-275
MF Electronics crystal oscillator m1200
Photo sensitive diode
Siemens diode Ssi K28
0/Siemens diode Ssi K28
d313 TRANSISTOR equivalent
74LS00
ir led PHOTODIODE
transistor d313 pinout
Analog Applications Journal
10B12B
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Narva
Abstract: TX5B Heft 54 Scans-048 aim ac hoe rv heft hcj 6a IH400 siek 1 AE 1000-SS
Text: p,. c . r y p / i E B C n o n P A H O H H b I M B O n P M H H H B O P A M H 3 A aT e/ibC T B o „ T e x H iK a " K m ob — 1 9 7 0 M 6<D0. 31 0 8 3 T95 YAK 621.327.4/9.(031) CnpaBOHHHK no hohhum npnöopaM. T y p .n e b R . C. «TexHÍK», 1970, 180 crp.
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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