Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise. The G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current
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G8605
SE-171
KIRD1049E03
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode array G7150/G7151-16 16-element array Features Applications l 16-element array l For simple measurement l Near Infrared NIR spectrophotometer • General ratings Parameter G7150-16 Package Active area G7151-16 Unit mm DIP
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G7150/G7151-16
16-element
G7150-16
G7151-16
SE-171
KIRD1043E06
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.
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G8605
SE-171
KIRD1049E02
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G6849-01
Abstract: quadrant photodiode G6849 AK 1012
Text: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings
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G6849
G6849
G6849-01:
G6849-01
SE-171
KIRD1042E02
G6849-01
quadrant photodiode
AK 1012
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise. The G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current to achieve high D∗. One-stage (-10 °C) and two-stage (-20 °C) thermoelectrically cooled types are provided.
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G8605
KIRD1049E06
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.
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G12430
G12430-016D
G12430-032D
G12430-046D
40-pin
48-pin
18-pin
KIRD1124E01
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G12180 series Photosensitive area from ϕ0.3 mm to ϕ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with photosensitive area from ϕ0.3 mm to ϕ5 mm.
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G12180
B1201,
KIRD1121E02
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A3179
Abstract: A3179-01 C1103-04 C4159-02 C4159-03 G8605 G8605-11 G8605-12 G8605-13 G8605-15
Text: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.
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Original
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PDF
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G8605
SE-171
KIRD1049E02
A3179
A3179-01
C1103-04
C4159-02
C4159-03
G8605-11
G8605-12
G8605-13
G8605-15
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C4159-03
Abstract: c4159 e G8605-13 G8605-15 A3179 A3179-01 C1103-04 C4159-02 G8605 G8605-11
Text: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.
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G8605
SE-171
KIRD1049E01
C4159-03
c4159 e
G8605-13
G8605-15
A3179
A3179-01
C1103-04
C4159-02
G8605-11
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quadrant photodiode
Abstract: G6849 G6849-01
Text: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings
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G6849
G6849
G6849-01:
G6849-01
SE-171
KIRD1042E01
quadrant photodiode
G6849-01
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G6849
Abstract: G6849-01 quadrant photodiode
Text: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings
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G6849
G6849
G6849-01:
G6849-01
SE-171
KIRD1042E03
G6849-01
quadrant photodiode
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings
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G6849
G6849
G6849-01:
G6849-01
SE-171
KIRD1042E02
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G8370-81
Abstract: G8370-82 G8370-83 G8370-85
Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
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G8370-81/-82/-83/-85
G8370-81/-82/-83/-85
G8370-81
G8370-82
G8370-83
G8370-85
SE-171
KIRD1064E04
G8370-81
G8370-82
G8370-83
G8370-85
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.
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Original
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G12430
G12430-016D
G12430-032D
G12430-046D
40-pin
48-pin
18-pin
KIRD1124E02
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G8370-01
Abstract: G8370 G8370-02 G8370-03 G8370-05
Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
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G8370
G8370-01
G8370-02
G8370-03
G8370-05
SE-171
KIRD1050E03
G8370-01
G8370-02
G8370-03
G8370-05
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G7150-16
Abstract: G7151-16
Text: PHOTODIODE InGaAs PIN photodiode array G7150/G7151-16 16-element array Features Applications l 16-element array l For simple measurement l Near Infrared NIR spectrophotometer • General ratings Parameter G7150-16 Package Active area G7151-16 Unit mm DIP
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G7150/G7151-16
16-element
G7150-16
G7151-16
SE-171
KIRD1043E04
G7150-16
G7151-16
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G8376-01
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8376 series Standard type InGaAs PIN photodiodes are NIR near infrared detectors that feature high-speed response and low noise. Various active area sizes are provided to meet wide applications. Features Applications l Low noise, low dark current
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G8376
G8376-01
G8376-02
G8376-03
G8376-05
SE-171
KIRD1051E04
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.
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Original
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G8605
SE-171
KIRD1049E01
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AW100
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings
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G6849
G6849
G6849-01:
G6849-01
SE-171
KIRD1042E03
AW100
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode array G7150/G7151-16 16-element array Features Applications l 16-element array l For simple measurement l Near Infrared NIR spectrophotometer • General ratings Parameter G7150-16 Package Active area G7151-16 Unit mm DIP
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Original
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PDF
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G7150/G7151-16
16-element
G7150-16
G7151-16
SE-171
KIRD1043E02
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A778
Abstract: G6742 G6742-003 G6742-01
Text: PHOTODIODE InGaAs PIN photodiode G6742 series Surface-mount type Features Applications l Small chip carrier package l High reliability l Low price l Laser diode monitors • General ratings Parameter Package Active area G6742-003 ■ Absolute maximum ratings
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G6742
G6742-003
G6742-01
SE-171
KIRD1016E01
A778
G6742-003
G6742-01
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.
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Original
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G8605
SE-171
KIRD1004E02
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G3476-10
Abstract: No abstract text available
Text: InGaAs-PIN Photodiodes High-speed NIR Near Infrared Detectors with Low Noise In G a A s -P IN p h o to d io d e s h a v e a s m a ll le r m in a l c a p a c ita n c e an d th erefo re achieve fast response. In ad dition, these d ev ices feature low noise o p eratio n due to large shunt resistance.
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OCR Scan
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PDF
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KIRDB0040EA
KIRDB0042EA
900Max.
KIRDA0005EA
G3476-10
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Untitled
Abstract: No abstract text available
Text: InGaAs-PIN Photodiodes High-speed NIR Near Infrared Detectors with Low Noise In G aA s-P IN p h o to d io d e s h ave a sm all term in al c ap a citan c e and therefore achieve last response. In addition, these devices feature low noise operation due to large shunt resistance.
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OCR Scan
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128-elem
D80039EA
RDB0040E
G6114-02
KIRDB0041EA
KIRDB0042EA
KIRDB0044EB
KIRDA0005EA
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