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    G8376 Search Results

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    G8376 Price and Stock

    Seiko Epson Corporation SG-8101CG 83.765880M-TCHPA0

    SG-8101CG 83.765880M-TCHPA0: OSC
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    DigiKey SG-8101CG 83.765880M-TCHPA0 Reel 1,000
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    Seiko Epson Corporation SG-8101CG 83.765880M-TBGPA0

    SG-8101CG 83.765880M-TBGPA0: OSC
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    Seiko Epson Corporation SG-8101CG 83.765880M-TCHSA0

    SG-8101CG 83.765880M-TCHSA0: OSC
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    DigiKey SG-8101CG 83.765880M-TCHSA0 Reel 1,000
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    Seiko Epson Corporation SG-8101CG 83.765880M-TBGSA0

    SG-8101CG 83.765880M-TBGSA0: OSC
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    DigiKey SG-8101CG 83.765880M-TBGSA0 Reel 1,000
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    Seiko Epson Corporation SG-8018CG 83.765880M-TJHSA0

    XTAL OSC XO 83.765880MHZ CMOS SM
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    Mouser Electronics SG-8018CG 83.765880M-TJHSA0
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    G8376 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    G8376 Hamamatsu InGaAs PIN photodiode Original PDF
    G8376-01 Hamamatsu InGaAs PIN photodiode Original PDF
    G8376-01 Hamamatsu Photonics InGaAs PIN photodiode Original PDF
    G8376-02 Hamamatsu InGaAs PIN photodiode Original PDF
    G8376-02 Hamamatsu Photonics InGaAs PIN photodiode Original PDF
    G8376-03 Hamamatsu InGaAs PIN photodiode Original PDF
    G8376-03 Hamamatsu Photonics InGaAs PIN photodiode Original PDF
    G8376-05 Hamamatsu InGaAs PIN photodiode Original PDF

    G8376 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G8376-01

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8376 series Standard type InGaAs PIN photodiodes are NIR near infrared detectors that feature high-speed response and low noise. Various active area sizes are provided to meet wide applications. Features Applications l Low noise, low dark current


    Original
    PDF G8376 G8376-01 G8376-02 G8376-03 G8376-05 SE-171 KIRD1051E04

    G8376

    Abstract: G8376-01 G8376-02 G8376-03 G8376-05 InGaAs photodiode spectral response
    Text: PHOTODIODE InGaAs PIN photodiode G8376 series Standard type InGaAs PIN photodiodes are NIR near infrared detectors that feature high-speed response and low noise. Various active area sizes are provided to meet wide applications. Features Applications l Low noise, low dark current


    Original
    PDF G8376 G8376-01 G8376-02 G8376-03 G8376-05 SE-171 KIRD1051E02 G8376-01 G8376-02 G8376-03 G8376-05 InGaAs photodiode spectral response

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8376 series Standard type InGaAs PIN photodiodes are NIR near infrared detectors that feature high-speed response and low noise. Various active area sizes are provided to meet wide applications. Features Applications l Low noise, low dark current


    Original
    PDF G8376 G8376-01 G8376-02 G8376-03 G8376-05 SE-171 KIRD1051E03

    G8376

    Abstract: G8376-03 G8376-05 photodiode InGaAs NEP shunt italia g837605
    Text: InGaAs PIN photodiodes G8376 series Standard type InGaAs PIN photodiodes are NIR near infrared detectors that feature high-speed response and low noise. Features Low noise, low dark current Low terminal capacitance 3-pin TO-18 package Applications NIR (near infrared) photometry


    Original
    PDF G8376 G8376-03 G8376-05 SE-171 KIRD1051E05 G8376-03 G8376-05 photodiode InGaAs NEP shunt italia g837605

    G8376-05

    Abstract: G8376-03 G8376 KIRD1051J05 2010dn
    Text: InGaAs PINフォトダイオード G8376シリーズ 標準タイプ 低雑音で高速応答のNIR 近赤外 検出素子です。 特長 低雑音低暗電流 3ピンTO-18パッケージ 低端子間容量 用途 NIR (近赤外)測光 光通信 仕様


    Original
    PDF G8376 3TO-18 G8376-03 G8376-05 G8376-05 G8376-03 G8376 KIRD1051J05 2010dn

    G8376

    Abstract: G8376-01 G8376-02 G8376-03 G8376-05
    Text: PHOTODIODE InGaAs PIN photodiode G8376 series Standard type InGaAs PIN photodiodes are NIR near infrared detectors that feature high-speed response and low noise. Various active area sizes are provided to meet wide applications. Features Applications l Low noise, low dark current


    Original
    PDF G8376 G8376-01 G8376-02 G8376-03 G8376-05 SE-171 KIRD1051E03 G8376-01 G8376-02 G8376-03 G8376-05

    Untitled

    Abstract: No abstract text available
    Text: InGaAs PINフォトダイオード G11777-003P 表面実装型COB chip on board パッケージ G11777-003Pは表面実装型COBパッケージの小型・近赤外線検出素子です。従来品のメタルパッケージタイプ (G837603)に比べて、大幅に小型化を実現しました。感度波長範囲は0.9~1.7 mで (最大感度波長 1.55 μm)、高感度・低ノイズを


    Original
    PDF G11777-003P G11777-003Pã G837603) KIRDB0475JA KIRDB0476JA KIRDB0470JA KIRDA0213JC KIRD1114J03

    G11777-003P

    Abstract: spot light size photodiode InGaAs PIN photodiode Wavelength .6 to 1.7 InGaas PIN photodiode chip
    Text: InGaAs PIN photodiode G11777-003P Surface mounted type COB chip on board package The G11777-003P is a small-size near infrared detector available in a surface mount COB (chip on board) package. Its size is drastically reduced compared to the previous metal package type (G8376-03). The spectral response covers a


    Original
    PDF G11777-003P G11777-003P G8376-03) KIRD1114E03 spot light size photodiode InGaAs PIN photodiode Wavelength .6 to 1.7 InGaas PIN photodiode chip

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8376 series Standard type InGaAs PIN photodiodes are NIR near infrared detectors that feature high-speed response and low noise. Various active area sizes are provided to meet wide applications. Features Applications l Low noise, low dark current


    Original
    PDF G8376 G8376-01 G8376-02 G8376-03 G8376-05 SE-171 KIRD1051E03

    G8376

    Abstract: G8376-01 G8376-02 G8376-03 G8376-05
    Text: PHOTODIODE InGaAs PIN photodiode G8376 series Standard type InGaAs PIN photodiodes are NIR near infrared detectors that feature high-speed response and low noise. Various active area sizes are provided to meet wide applications. Features Applications l Low noise, low dark current


    Original
    PDF G8376 G8376-01 G8376-02 G8376-03 G8376-05 SE-171 KIRD1051E04 G8376-01 G8376-02 G8376-03 G8376-05

    Untitled

    Abstract: No abstract text available
    Text: Photosensor amplifier C8366 series Current-to-voltage conversion amplifier C8366: for high-speed Si PIN photodiode C8366-01: for high-speed InGaAs PIN photodiode Features Applications Wide band DC to 100 MHz Typ. (-3 dB; varies depending on the photodiode used)


    Original
    PDF C8366 C8366: C8366-01: C8366 B1201, KACC1067E06

    L11938

    Abstract: s11850
    Text: NEWS 02 2011 SOLID STATE PRODUCTS PAGE 06 High-sensitivity dual-element detectors ideal for gas analysis applications LASER PRODUCTS Mid-Infrared Quantum Cascade Lasers PAGE 18 ELECTRON TUBE PRODUCTS PAGE 23 Xenon Flash Light Source LF2 L11729, L11730 SYSTEMS PRODUCTS


    Original
    PDF L11729, L11730 C10910 T11262-01, T11722-01 L12004-2190H-C, D-82211 DE128228814 L11938 s11850

    Untitled

    Abstract: No abstract text available
    Text: フォトセンサアンプ C8366シリーズ 電流-電圧変換アンプ C8366: 高速Si PINフォトダイオード用 C8366-01: 高速InGaAs PINフォトダイオード用 特長 用途 広帯域 DC~100 MHz typ. (-3 dB, フォトダイオ-ドの性能に


    Original
    PDF C8366ã C8366: C8366-01: O-8/TO-5/TO-18ç AWG24) KACCC0755JA E2573 KACCA0334JA

    Untitled

    Abstract: No abstract text available
    Text: 技術資料 赤外線検出素子の 特性と使い方 1001 赤外線は可視光とマイクロ波の間の0.75 µm~1000 µmの電磁波です。この広い領域をカバーするため多くの赤外線検出素 子が開発されています。この小冊子では、浜松ホトニクスが製造販売している赤外線検出素子の特性と使い方について説明


    Original
    PDF KIRD9001J04