6D0N40F
Abstract: TO-220IS KHB6D0N40F2
Text: SEMICONDUCTOR KHB6D0N40F2 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 6D0N40F 2 No. 2007. 5. 23 713 2 Item Marking Description Device Name KHB6D0N40F2 KHB6D0N40F2 Lot No. 713 Revision No : 0 7 Year 0~9 : 2000~2009
|
Original
|
PDF
|
KHB6D0N40F2
O-220IS
6D0N40F
6D0N40F
TO-220IS
KHB6D0N40F2
|
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
|
Original
|
PDF
|
|
D 92 M - 02 DIODE
Abstract: KHB6D0N40F KHB6D0N40F2 KHB6D0N40P
Text: SEMICONDUCTOR KHB6D0N40P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB6D0N40P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
|
Original
|
PDF
|
KHB6D0N40P/F/F2
KHB6D0N40P
Fig15.
Fig16.
Fig17.
D 92 M - 02 DIODE
KHB6D0N40F
KHB6D0N40F2
KHB6D0N40P
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB6D0N40P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB6D0N40P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
|
Original
|
PDF
|
KHB6D0N40P/F/F2
KHB6D0N40P
dI/dt100A/,
|