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    KEC KHB4D0N80P1UP

    N-CHANNEL MOS FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 4A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    KHB4D0N80P1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KHB4D0N80P1 Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF

    KHB4D0N80P1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "VDSS 800V" 40A mosfet

    Abstract: 800V 40A mosfet KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80P1 khb*4D0N80F2
    Text: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB4D0N80P1/F1/F2 KHB4D0N80P1 "VDSS 800V" 40A mosfet 800V 40A mosfet KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80P1 khb*4D0N80F2

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    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB4D0N80P1/F1/F2

    KHB4D0N80F2

    Abstract: KHB4D0N80F1 khb*4D0N80F2 KHB4D0N80P1 800V 40A mosfet A10150 "VDSS 800V" 40A mosfet
    Text: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB4D0N80P1/F1/F2 KHB4D0N80P1 KHB4D0N80F2 KHB4D0N80F1 khb*4D0N80F2 KHB4D0N80P1 800V 40A mosfet A10150 "VDSS 800V" 40A mosfet

    KHB4D0N80F

    Abstract: khb*4D0N80F2 KHB4D0N80F2
    Text: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB4D0N80P1/F1/F2 KHB4D0N80P1 KHB4D0N80F1 KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80F khb*4D0N80F2 KHB4D0N80F2

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF