1D0N60
Abstract: KHB1D9N60I KHB1D0N60I khb1d9n60 DPAK khb*9n60 D-PAK package DPAK datasheet laser marking 5
Text: SEMICONDUCTOR KHB1D0N60I MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking 2. Marking KHB 1D0N60 I 1 511 3 2 No. 2006. 2. 6 Item Marking Description Device Name KHB1D9N60I KHB1D9N60I Revision - - Lot No. 511 Revision No : 1 5 Year 0~9 : 2000~2009
|
Original
|
KHB1D0N60I
1D0N60
KHB1D9N60I
1D0N60
KHB1D9N60I
KHB1D0N60I
khb1d9n60
DPAK
khb*9n60
D-PAK package
DPAK datasheet
laser
marking 5
|
PDF
|
10101DC
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D2N80D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D2N80D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
|
Original
|
KHB1D2N80D/I
KHB1D2N80D
10101DC
|
PDF
|
MOSFET 600V 1A
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D0N60G TECHNICAL DATA N-Ch Planer MOSFET General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power
|
Original
|
KHB1D0N60G
MOSFET 600V 1A
|
PDF
|
KHB1D9N60I
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D9N60D1/I1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
|
Original
|
KHB1D9N60D1/I1
KHB1D9N60I
|
PDF
|
khb1d9n60
Abstract: KHB1D9N60I khb1d9n60d khb*9n60 RL158 PUT2 khb*1D9N60
Text: SEMICONDUCTOR KHB1D9N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D9N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
|
Original
|
KHB1D9N60D/I
KHB1D9N60D
khb1d9n60
KHB1D9N60I
khb1d9n60d
khb*9n60
RL158
PUT2
khb*1D9N60
|
PDF
|
KHB1890C01
Abstract: No abstract text available
Text: DIELECTRIC DEVICE KHB1890C01 TECHNICAL DATA TYPICAL PASSBAND CHARACTERISTIC DIELECTRIC BAND PASS FILTER DIMENSION 4 2 60 30 5.6 20 3.8 40 2.3 10 4.3 20 RETURN LOSS [dB] ATTENUATION [dB] 1640 1890 1.5 1 1.8 MARKER 2 1.89GHz 2140 Frequency [MHz] _ 0.1mm Dimension Tolerance : +
|
Original
|
KHB1890C01
89GHz
1680MHz
1790MHz
3800MHz
5700MHz
KHB1890C01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D9N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
|
Original
|
KHB1D9N60D/I
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D0N70G TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power
|
Original
|
KHB1D0N70G
|
PDF
|
KHB1D0N60D
Abstract: KHB1D0N60I
Text: SEMICONDUCTOR KHB1D0N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
|
Original
|
KHB1D0N60D/I
KHB1D0N60D
115mH,
dI/dt300A/,
KHB1D0N60D
KHB1D0N60I
|
PDF
|
diode TA 20-08
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D0N60G TECHNICAL DATA N-Ch Planer MOSFET General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power
|
Original
|
KHB1D0N60G
diode TA 20-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D9N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode
|
Original
|
KHB1D9N60D/I
|
PDF
|
KHB1D9N60
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D9N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
|
Original
|
KHB1D9N60D/I
KHB1D9N60
|
PDF
|
KHB1D0N60D
Abstract: KHB1D0N60I
Text: SEMICONDUCTOR KHB1D0N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
|
Original
|
KHB1D0N60D/I
KHB1D0N60D
KHB1D0N60D
KHB1D0N60I
|
PDF
|
KHB1D9N60D
Abstract: khb1d9n60 KHB1D9N60I khb*9n60
Text: SEMICONDUCTOR KHB1D9N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D9N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
|
Original
|
KHB1D9N60D/I
KHB1D9N60D
KHB1D9N60D
khb1d9n60
KHB1D9N60I
khb*9n60
|
PDF
|
|
|
1A 700V MOSFET
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D0N70G TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power
|
Original
|
KHB1D0N70G
Volt560V,
1A 700V MOSFET
|
PDF
|
KHB1D9N60I
Abstract: KHB1D9N60D khb1d9n60 109NC
Text: SEMICONDUCTOR KHB1D9N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D9N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
|
Original
|
KHB1D9N60D/I
KHB1D9N60D
dI/dt100A/,
KHB1D9N60I
KHB1D9N60D
khb1d9n60
109NC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D2N80D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D2N80D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
|
Original
|
KHB1D2N80D/I
KHB1D2N80D
170mH,
dI/dt300A/,
|
PDF
|
RG 2006 10A 600V
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D0N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
|
Original
|
KHB1D0N60D/I
KHB1D0N60D
RG 2006 10A 600V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D0N60G TECHNICAL DATA N-Ch Planer MOSFET General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power
|
Original
|
KHB1D0N60G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D0N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
|
Original
|
KHB1D0N60D/I
|
PDF
|
KHB1D0N60D
Abstract: KHB1D0N60I
Text: SEMICONDUCTOR KHB1D0N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
|
Original
|
KHB1D0N60D/I
KHB1D0N60D
KHB1D0N60I
|
PDF
|
1D0N60
Abstract: KHB1D0N60D 1D0N60D 1D0N6 dpak DSA0010423 D-PAK package marking laser dpak Package
Text: SEMICONDUCTOR KHB1D0N60D MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking. 2. Marking KHB 1D0N60 D 1 511 3 2 No. 2006. 2. 6 Item Marking Description Device Name KHB1D0N60D KHB1D0N60D Revision - - Lot No. 511 Revision No : 1 5 Year 0~9 : 2000~2009
|
Original
|
KHB1D0N60D
1D0N60
1D0N60
KHB1D0N60D
1D0N60D
1D0N6
dpak
DSA0010423
D-PAK package
marking
laser
dpak Package
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D0N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
|
Original
|
KHB1D0N60D/I
KHB1D0N60D
KHB1D0N60D
KHB1D0N60I
115mH,
|
PDF
|
660 tg diode
Abstract: No abstract text available
Text: S E M IC O N D U C T O R KHB1D2N80D/I TE CHNICAL DATA N C H A N N E L M O S FIELD EFFEC T T R A N SIS T O R G eneral Description KHB1D2N80D This planar stripe M OSFET has better characteristics, such as fast sw itching tim e, low on resistan ce, low gate charge and excellent
|
OCR Scan
|
KHB1D2N80D/I
KHB1D2N80D
100ns-
660 tg diode
|
PDF
|
