KERSEMI
Abstract: No abstract text available
Text: KSM9N25C/KSMF9N25C KERSEMI ELECTROIC CO.,LTD. 250V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 8.8A, 250V, RDS on = 0.43Ω @VGS = 10 V Low gate charge ( typical 26.5 nC) Low Crss ( typical 45.5 pF) Fast switching 100% avalanche tested
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KSM9N25C/KSMF9N25C
O-220
O-220F
KERSEMI
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Untitled
Abstract: No abstract text available
Text: FGA25N120AN TO-3P Features • High speed switching • Low saturation voltage : VCE sat = 2.5 V @ IC = 25A • High input impedance General Description Employing NPT technology, Kersemi AN series of provides low conduction and switching losses. The AN series offers an solution for application such as induction
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FGA25N120AN
45TYP
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Untitled
Abstract: No abstract text available
Text: KSM61N20 200V N-Channel MOSFET TO-220 Features • 61A, 200V, RDS on = 0.041Ω @VGS = 10 V • Low gate charge ( typical 58 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe,
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KSM61N20
O-220
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Untitled
Abstract: No abstract text available
Text: TL431 KERSEMI ELECTRONIC CO.,LTD. PROGRAMMABLE VOLTAGE REFERENCE Z DESCRIPTION TO92 The TL431 is a programmable shunt voltage reference with guaranteed temperature stability over the entire temperature range of operation. The output voltage may be set to any value
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TL431
TL431
100mA
100mA
TL431C/AC
TL431I/AI
KSM431
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Untitled
Abstract: No abstract text available
Text: KSMD8P10TM_F085 100V P-Channel MOSFET TO-252 Features • • • • • • • • -6.6A, -100V, RDS on = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability Qualified to AEC Q101
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KSMD8P10TM
O-252
-100V,
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Untitled
Abstract: No abstract text available
Text: KSMD7N30 / KSMU7N30 TO-252 TO-251 % % % % % % & &' *+,) -Ω.*,/)* 0 1 /( 2 01 /32 /)4 ! 5 !!$ "
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KSMD7N30
KSMU7N30
O-252
O-251
30TYP
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Untitled
Abstract: No abstract text available
Text: KSM14N30 % % % % % % &' ' *+,-* ./Ω0+-&*+ 1 2 )* 3 12 .)3 &*4 ! 5 !!$ "
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KSM14N30
95MAX.
54TYP
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Untitled
Abstract: No abstract text available
Text: KSMF10N20 & & & & & & ' % *+,-* .'Ω/+-0*+ 1 2 0. 3 4 12 0.4 0*5 ! 6 !!$ "
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KSMF10N20
00x45Â
54TYP
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Untitled
Abstract: No abstract text available
Text: KSMD3N25 / KSMU3N25 250V N-Channel MOSFET TO-252 TO-251 Features • • • • • • 2.4A, 250V, RDS on = 2.2Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 4.7 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description
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KSMD3N25
KSMU3N25
O-252
O-251
30TYP
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Untitled
Abstract: No abstract text available
Text: KSMD19N10L / KSMU19N10L 100V LOGIC N-Channel MOSFET TO-252 TO-251 Features • • • • • • 15.6A, 100V, RDS on = 0.1Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSMD19N10L
KSMU19N10L
O-252
O-251
30TYP
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FQP90N10
Abstract: No abstract text available
Text: KSM90N10V2/KSMF90N10V2 100V N-Channel MOSFET • • • • • • TO-220F TO-220 Features 90 A, 100V, RDS on = 0.01Ω @VGS = 10 V Low gate charge ( typical 147 nC) Low Crss ( typical 300 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSM90N10V2/KSMF90N10V2
O-220F
O-220
54TYP
00x45Â
FQP90N10
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Untitled
Abstract: No abstract text available
Text: KSM9N50C/KSMF9N50C 500V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 9 A, 500V, RDS on = 0.8 Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 24 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description
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KSM9N50C/KSMF9N50C
O-220
O-220F
54TYP
00x45Â
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Untitled
Abstract: No abstract text available
Text: KSMD5N50 / KSMU5N50 TO-252 TO-251 $ $ $ $ $ $ % &'& *+, -Ω.)+,() / 0 ,% 1 /0 - &1 ,(2 ! 3 !!4 "
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KSMD5N50
KSMU5N50
O-252
O-251
30TYP
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Untitled
Abstract: No abstract text available
Text: KSM7N10L 100V LOGIC N-Channel MOSFET Features • • • • • • • • TO-220 7.3A, 100V, RDS on = 0.35Ω @VGS = 10 V Low gate charge ( typical 4.6 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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KSM7N10L
O-220
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Untitled
Abstract: No abstract text available
Text: KSM12N20L 200V LOGIC N-Channel MOSFET TO-220 Features • • • • • • • 11.6A, 200V, RDS on = 0.28Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct
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KSM12N20L
O-220
95MAX.
54TYP
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Untitled
Abstract: No abstract text available
Text: KSM6N90C/KSMF6N90C 900V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 6A, 900V, RDS on = 2.3Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description
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KSM6N90C/KSMF6N90C
O-220
O-220F
54TYP
00x45Â
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Untitled
Abstract: No abstract text available
Text: KSMD6N40 / KSMU6N40 TO-252 TO-251 $ $ $ $ $ $ % &'% *+, ,-Ω.)+,() / 0 ,1 2 /0 3 -2 ,(4 ! 5 !!6 "
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KSMD6N40
KSMU6N40
O-252
O-251
30TYP
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Untitled
Abstract: No abstract text available
Text: KSMD2N100/KSMU2N100 1000V N-Channel MOSFET TO-252 TO-251 Features • • • • • • 1.6A, 1000V, RDS on = 9Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 5 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description
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KSMD2N100/KSMU2N100
O-252
O-251
30TYP
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Untitled
Abstract: No abstract text available
Text: KSMD5N60C / KSMU5N60C N-Channel MOSFET 600 V, 2.8 A, 2.5 Ω Features TO-251 TO-252 • 2.8 A, 600 V, RDS on = 2.5 Ω (Max) @VGS = 10 V, ID = 1.4 A • Low Gate Charge (Typ. 15 nC) • Low Crss (Typ. 6.5 pF) • 100% Avalanche Tested • RoHS compliant Description
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KSMD5N60C
KSMU5N60C
O-251
O-252
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Untitled
Abstract: No abstract text available
Text: KSM8P10 100V P-Channel MOSFET TO-220 Features • • • • • • • -8.0A, -100V, RDS on = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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KSM8P10
O-220
-100V,
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Untitled
Abstract: No abstract text available
Text: KSM7N60 600V N-Channel MOSFET TO-220 Features • • • • • • 7.4A, 600V, RDS on = 1.0Ω @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description These N-Channel enhancement mode power field effect
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KSM7N60
O-220
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Abstract: No abstract text available
Text: KSM8N90C/KSMF8N90C 900V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 6.3A, 900V, RDS on = 1.9Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description
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KSM8N90C/KSMF8N90C
O-220
O-220F
54TYP
00x45Â
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Untitled
Abstract: No abstract text available
Text: KSMD5N15 / KSMU5N15 TO-252 TO-251 % % % % % % & ' *+,-.+ /Ω0,.)+, 1 2 * & 3 12 4 *3 )+5 ! 6 !!$ "
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KSMD5N15
KSMU5N15
O-252
O-251
30TYP
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Untitled
Abstract: No abstract text available
Text: KSMD4N25 / KSMU4N25 N-Channel MOSFET 250 V, 3 A, 1.75Ω TO-251 TO-252 Features • 3 A, 250 V, RDS on = 1.75 Ω (Max) @VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 4.3 nC) • Low Crss (Typ. 4.8 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is
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KSMD4N25
KSMU4N25
O-251
O-252
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