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    K7A65D Search Results

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    K7A65D Price and Stock

    Toshiba America Electronic Components TK7A65D(STA4,Q,M)

    MOSFET N-CH 650V 7A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK7A65D(STA4,Q,M) Tube 40 1
    • 1 $2.07
    • 10 $2.07
    • 100 $1.3664
    • 1000 $0.98098
    • 10000 $0.89375
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    Mouser Electronics TK7A65D(STA4,Q,M) 4
    • 1 $2.07
    • 10 $1.67
    • 100 $1.3
    • 1000 $0.931
    • 10000 $0.896
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    Toshiba America Electronic Components TK7A65D(STA4QM)

    Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220NIS - Rail/Tube (Alt: TK7A65D(STA4,Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK7A65D(STA4QM) Tube 32 Weeks 50
    • 1 -
    • 10 -
    • 100 $1.06535
    • 1000 $0.96525
    • 10000 $0.9152
    		Buy Now
    TK7A65D(STA4QM) Bulk 16 Weeks, 3 Days 1
    • 1 $2.22
    • 10 $1.99
    • 100 $1.6
    • 1000 $1.6
    • 10000 $1.6
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    K7A65D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: K7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K7A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.8 Ω(typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)


    Original     		PDF TK7A65D

    Untitled

    Abstract: No abstract text available
    Text: K7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K7A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.8 Ω(typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)


    Original     		PDF TK7A65D

    K7A65D

    Abstract: TK7A65D on47 k7a65
    Text: K7A65D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K7A65D スイッチングレギュレータ用 単位: mm : RDS (ON) =0.8 Ω (標準) : IDSS = 10 A (最大) 漏れ電流が低い。 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2


    Original     		PDF TK7A65D K7A65D TK7A65D on47 k7a65

    K7A65D

    Abstract: TK7A65D k7a65
    Text: K7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K7A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.8 Ω(typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)


    Original     		PDF TK7A65D K7A65D TK7A65D k7a65

    Untitled

    Abstract: No abstract text available
    Text: K7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K7A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)


    Original     		PDF TK7A65D

    TK7A65D

    Abstract: K7A65D k7a65 DSASW0038967
    Text: K7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K7A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.8 Ω(typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)


    Original     		PDF TK7A65D TK7A65D K7A65D k7a65 DSASW0038967