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    K7A50 Price and Stock

    Toshiba America Electronic Components TK7A50D(STA4,Q,M)

    MOSFET N-CH 500V 7A TO220SIS
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    DigiKey TK7A50D(STA4,Q,M) Tube 22 1
    • 1 $1.98
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    • 1000 $0.62319
    • 10000 $0.54
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    Mouser Electronics TK7A50D(STA4,Q,M) 8
    • 1 $1.77
    • 10 $1.6
    • 100 $0.775
    • 1000 $0.557
    • 10000 $0.54
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    EBV Elektronik TK7A50D(STA4,Q,M) 19 Weeks 50
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    Toshiba America Electronic Components TK7A50D(STA4QM)

    Trans MOSFET N-CH 500V 7A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK7A50D(STA4,Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK7A50D(STA4QM) Tube 32 Weeks 50
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    • 100 $0.64368
    • 1000 $0.5832
    • 10000 $0.5832
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    K7A50 Datasheets Context Search

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    K7A50D

    Abstract: TK7A50D K7A50 K*A50D
    Text: K7A50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K7A50D スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.5 S (標準)


    Original
    TK7A50D SC-67 2-10U1B 20070701-JA K7A50D TK7A50D K7A50 K*A50D PDF

    K7A50D

    Abstract: toshiba K7A50D TK7A50D K7A50 K*A50D
    Text: K7A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K7A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)


    Original
    TK7A50D K7A50D toshiba K7A50D TK7A50D K7A50 K*A50D PDF

    K7A50D

    Abstract: No abstract text available
    Text: K7A50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K7A50D スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.5 S (標準)


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    TK7A50D K7A50D PDF

    Untitled

    Abstract: No abstract text available
    Text: K7A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K7A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)


    Original
    TK7A50D 12led PDF

    K7A50

    Abstract: K*A50D
    Text: K7A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K7A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)


    Original
    TK7A50D 12mitation, K7A50 K*A50D PDF

    K7A50D

    Abstract: toshiba K7A50D TK7A50D K7A50 K*A50D
    Text: K7A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K7A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)


    Original
    TK7A50D K7A50D toshiba K7A50D TK7A50D K7A50 K*A50D PDF