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    Toshiba America Electronic Components TK70D06J1(Q)

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    TK70D06J1

    Abstract: No abstract text available
    Text: K70D06J1 東芝電界効果トランジスタ シリコンNチャネルMOS形 超高速U-MOSⅢ K70D06J1 スイッチングレギュレーター用 単位: mm z ゲート入力電荷量が小さい。: Qg = 87 nC (標準) z オン抵抗が低い。 : RDS (ON) = 5.1 mΩ (標準)


    Original     		PDF TK70D06J1 2-10V1A TK70D06J1

    TK70D06J1

    Abstract: No abstract text available
    Text: K70D06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K70D06J1 Switching Regulator Application • Unit: mm High-Speed switching • Small gate charge: Qg = 87 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.)


    Original     		PDF TK70D06J1 TK70D06J1

    TK70D06J1

    Abstract: No abstract text available
    Text: K70D06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K70D06J1 Switching Regulator Application Unit: mm • High-Speed switching • Small gate charge: Qg = 87nC (typ.) • Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.)


    Original     		PDF TK70D06J1 TK70D06J1

    K70D06J

    Abstract: TK70D06J1 135g2
    Text: K70D06J1 東芝電界効果トランジスタ シリコンNチャネルMOS形 超高速U-MOSⅢ K70D06J1 スイッチングレギュレーター用 単位: mm z ゲート入力電荷量が小さい。: Qg = 87 nC (標準) z オン抵抗が低い。 : RDS (ON) = 5.1 mΩ (標準)


    Original     		PDF TK70D06J1 2-10V1A K70D06J TK70D06J1 135g2