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    Samsung Semiconductor K6T4008C1B-DL70

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    Bristol Electronics K6T4008C1B-DL70 34
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    Samsung Semiconductor K6T4008C1BDL70

    512K X 8 BIT LOW POWER CMOS STATIC RAM Standard SRAM, 512KX8, 70ns, CMOS, PDIP32
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    ComSIT USA K6T4008C1BDL70 73
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    K6T4008C1BDL70 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    K6T4008C1B-DL70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF

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    K6T4008C1B-DB70

    Abstract: K6T4008C1B-GL70 K6T4008C1B K6T4008C1B-B K6T4008C1B-F K6T4008C1B-L K6T4008C1B-P K6T4008C1BDL70 K6T4008C1B-VB70 k6t4008c1b-gb55
    Text: CMOS SRAM K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA


    Original     		PDF K6T4008C1B 512Kx8 15/35mA 10/45mA 100pF 70/100ns 55/70ns 047MAX K6T4008C1B-DB70 K6T4008C1B-GL70 K6T4008C1B-B K6T4008C1B-F K6T4008C1B-L K6T4008C1B-P K6T4008C1BDL70 K6T4008C1B-VB70 k6t4008c1b-gb55

    K6T4008C1B-DB70

    Abstract: K6T4008C1B-DL70 K6T4008C1B-GL55
    Text: CMOS SRAM K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA


    Original     		PDF K6T4008C1B 512Kx8 15/35mA 10/45mA 100pF 70/100ns 55/70ns 047MAX K6T4008C1B-DB70 K6T4008C1B-DL70 K6T4008C1B-GL55