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    Toshiba America Electronic Components TK60D08J1(Q)

    MOSFET N-CH 75V 60A TO220
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    Toshiba America Electronic Components TK60D08J1Q

    SILICON N CHANNEL MOS TYPE (ULTRA-HIGH-SPEED U-MOS) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 60A I(D), 75V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA TK60D08J1Q 150
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    Untitled

    Abstract: No abstract text available
    Text: K60D08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K60D08J1 Switching Regulator Application Unit: mm • High-Speed switching • Small gate charge: Qg = 86nC (typ.) • Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.)


    Original     		PDF TK60D08J1

    K60D08J

    Abstract: TK60D08J1
    Text: K60D08J1 東芝電界効果トランジスタ シリコンNチャネルMOS形 超高速U-MOSⅢ K60D08J1 スイッチングレギュレーター用 単位: mm z ゲート入力電荷量が小さい。: Qg=86 nC (標準) z オン抵抗が低い。 : RDS (ON) = 6.2 mΩ (標準)


    Original     		PDF TK60D08J1 2-10V1A K60D08J TK60D08J1

    TK60D08J1

    Abstract: No abstract text available
    Text: K60D08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K60D08J1 Switching Regulator Application • Unit: mm High-Speed switching • Small gate charge: Qg = 86 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.)


    Original     		PDF TK60D08J1 TK60D08J1

    Untitled

    Abstract: No abstract text available
    Text: K60D08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K60D08J1 Switching Regulator Application Unit: mm • High-Speed switching • Small gate charge: Qg = 86nC (typ.) • Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.)


    Original     		PDF TK60D08J1