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    Samsung Semiconductor K4X56163PE-LGC2

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    K4X56163PE Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    K4X56163PE Samsung Electronics 16M x16 Mobile DDR SDRAM Original PDF
    K4X56163PE-BG Samsung Electronics DRAM Chip: 16Mx16 Mobile DDR SDRAM Original PDF
    K4X56163PE-BGC0 Samsung Electronics DRAM Chip: Mobile-DDR SDRAM: 32MByte: 1.8V Supply: Industrial: FBGA: 60-Pin Original PDF
    K4X56163PE-BGC2 Samsung Electronics DRAM Chip: Mobile-DDR SDRAM: 32MByte: 1.8V Supply: Industrial: FBGA: 60-Pin Original PDF
    K4X56163PE-FG Samsung Electronics DRAM Chip: 16Mx16 Mobile DDR SDRAM Original PDF
    K4X56163PE-FGC0 Samsung Electronics DRAM Chip: Mobile-DDR SDRAM: 32MByte: 1.8V Supply: Industrial: FBGA: 60-Pin Original PDF
    K4X56163PE-LFG Samsung Electronics 16M x16 Mobile DDR SDRAM Original PDF
    K4X56163PE-LG Samsung Electronics 16M x16 Mobile DDR SDRAM Original PDF
    K4X56163PE-LGC0 Samsung Electronics DRAM Chip: Mobile-DDR SDRAM: 32MByte: 1.8V Supply: Industrial: FBGA: 60-Pin Original PDF
    K4X56163PE-LGC2 Samsung Electronics DRAM Chip: Mobile-DDR SDRAM: 32MByte: 1.8V Supply: Industrial: FBGA: 60-Pin Original PDF

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    DDR133

    Abstract: DDR200 K4X56163PE
    Text: K4X56163PE-L F G Mobile-DDR SDRAM 16M x16 Mobile DDR SDRAM FEATURES • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK)


    Original     		PDF K4X56163PE-L A10/AP 200us DDR133 DDR200 K4X56163PE