K4T1G164QE-HC
Abstract: No abstract text available
Text: K4T1G044QE K4T1G084QE K4T1G164QE DDR2 SDRAM 1Gb E-die DDR2 SDRAM Specification 60FBGA & 84FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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K4T1G044QE
K4T1G084QE
K4T1G164QE
60FBGA
84FBGA
6-10per)
6-10per
K4T1G164QE-HC
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K4T1G164QE
Abstract: K4T1G084QE K4T1G164QE-HC DDR2-800 JESD79-2E
Text: Rev. 1.11, Feb. 2010 K4T1G044QE K4T1G084QE K4T1G164QE 1Gb E-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4T1G044QE
K4T1G084QE
K4T1G164QE
60FBGA/84FBGA
6-10per)
6-10per
K4T1G164QE
K4T1G084QE
K4T1G164QE-HC
DDR2-800
JESD79-2E
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Untitled
Abstract: No abstract text available
Text: K4T1G044QE K4T1G084QE K4T1G164QE DDR2 SDRAM 1Gb E-die DDR2 SDRAM Specification 60FBGA & 84FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K4T1G044QE
K4T1G084QE
K4T1G164QE
60FBGA
84FBGA
6-10per)
6-10per
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M378T2863EHS-CE7
Abstract: ddr2 module ecc DDR2-667 DDR2-800 1gb ddr2 800 serial presence detect M378T2863EHS
Text: SERIAL PRESENCE DETECT M378T2863EHS-CE7/CF7/CE6 Organization : 128M x 64 Composition : 128M x 8 * 8ea Used component part # : K4T1G084QE-CE7/F7/E6 # of rows in module : 1 Row # of banks in component : 8 banks Feature : 30mm height & single sided component
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M378T2863EHS-CE7/CF7/CE6
K4T1G084QE-CE7/F7/E6
8K/64ms
DDR2-800
DDR2-667
128bytes
256bytes
M378T2863EHS-CE7
ddr2 module ecc
1gb ddr2 800 serial presence detect
M378T2863EHS
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k4t1g164qe
Abstract: K4T1G164QE-HC TDS 3000 K4T1G084QE DDR2-800 JESD79-2E k4t1g084qe-hc K4T1G044QE-HC
Text: Rev. 1.12, Sep. 2010 K4T1G044QE K4T1G084QE K4T1G164QE 1Gb E-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4T1G044QE
K4T1G084QE
K4T1G164QE
60FBGA/84FBGA
6-10per)
6-10per
k4t1g164qe
K4T1G164QE-HC
TDS 3000
K4T1G084QE
DDR2-800
JESD79-2E
k4t1g084qe-hc
K4T1G044QE-HC
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k4t1g164qe
Abstract: k4t1g164qe-hi IDD3PS
Text: Rev. 1.3, Nov. 2009 K4T1G084QE K4T1G164QE 1Gb E-die DDR2 SDRAM Industrial 60FBGA/84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4T1G084QE
K4T1G164QE
60FBGA/84FBGA
6-10per)
6-10per
k4t1g164qe
k4t1g164qe-hi
IDD3PS
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K4T1G164QE-HCF8
Abstract: K4T1G164QE K4T1G084QE-HCF8 K4T1G084QE k4t1g084qe-hcf K4T1G164QE-HC
Text: K4T1G084QE K4T1G164QE DDR2 SDRAM 1Gb E-die DDR2-1066 SDRAM Specification 60/84FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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K4T1G084QE
K4T1G164QE
DDR2-1066
60/84FBGA
6-10per)
K4T1G164QE-HCF8
K4T1G164QE
K4T1G084QE-HCF8
K4T1G084QE
k4t1g084qe-hcf
K4T1G164QE-HC
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K4T1G164QE-HC
Abstract: K4T1G084QE k4t1g084qe-hc K4T1G164QE E6 DDR2-800 JESD79-2E K4T1G164QE K4T1G044QE
Text: K4T1G044QE K4T1G084QE K4T1G164QE DDR2 SDRAM 1Gb E-die DDR2 SDRAM Specification 60FBGA & 84FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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K4T1G044QE
K4T1G084QE
K4T1G164QE
60FBGA
84FBGA
6-10per)
6-10per
K4T1G164QE-HC
K4T1G084QE
k4t1g084qe-hc
K4T1G164QE E6
DDR2-800
JESD79-2E
K4T1G164QE
K4T1G044QE
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K4T1G164QF
Abstract: 1GB DDR2 4 banks K4T51083QI-HCE7 K4T51163QI K4T1G164QQ-HC k4t51083qi m470t5663 K4T1G164QE samsung ddr2 240pin 1gb K4T1G164QE-HC
Text: Apr. 2010 DDR2 SDRAM Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.
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68Ball
10MAX
K4T1G164QF
1GB DDR2 4 banks
K4T51083QI-HCE7
K4T51163QI
K4T1G164QQ-HC
k4t51083qi
m470t5663
K4T1G164QE
samsung ddr2 240pin 1gb
K4T1G164QE-HC
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VL493T5663
Abstract: VN0810 DDR2-400 DDR2-533 DDR2-667 PC2-3200 PC2-5300 K4T1G084QE-HCE6
Text: Product Specifications PART NO.: VL493T5663C-E6M/D5M/CCM REV: 1.3 General Information 2GB 256Mx72 DDR2 SDRAM ECC REGISTERED SO-RDIMM 200-PIN Description The VL493T5663C is a 256Mx72 DDR2 SDRAM high density SO-RDIMM. This memory module is dual rank, consists of eighteen CMOS 128Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, two 25-bit
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VL493T5663C-E6M/D5M/CCM
256Mx72
200-PIN
VL493T5663C
128Mx8
25-bit
200-pin
VN-081009
VL493T5663
VN0810
DDR2-400
DDR2-533
DDR2-667
PC2-3200
PC2-5300
K4T1G084QE-HCE6
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DDR2-400
Abstract: DDR2-533 DDR2-667 PC2-3200 PC2-5300
Text: Product Specifications PART NO.: VL493T5663D-E6M/D5M/CCM-S1 REV: 1.0 General Information 2GB 256Mx72 DDR2 SDRAM ECC REGISTERED SO-RDIMM 200-PIN Description The VL493T5663D is a 256Mx72 DDR2 SDRAM high density SO-RDIMM. This memory module consists of eighteen
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VL493T5663D-E6M/D5M/CCM-S1
256Mx72
200-PIN
VL493T5663D
128Mx8
25-bit
200-pin
VN-081009
DDR2-400
DDR2-533
DDR2-667
PC2-3200
PC2-5300
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Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.0 16.11.2009 1GB DDR2 – SDRAM registered DIMM Features: 240 Pin RDIMM 1 SEP01G72J2BE1SA-25R 1 1GB PC2-6400 in FBGA Technique 1 1 RoHS compliant Options: 1 Frequency / Latency DDR2 800MHZ CL6 800MHZ CL5 667MHz CL5 533MHz CL4 1 Module densities
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SEP01G72J2BE1SA-25R
PC2-6400
800MHZ
667MHz
533MHz
1024MB
D-12681
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PC2-5300F-555-11-B
Abstract: SG5SD82N2G1CDDJSE 2rx8 pc2-4200u-444-12
Text: SG5SD82N2G1CDDJUU February 5, 2009 Ordering Information Part Numbers Description AMB Vendor Device Vendor SG5SD82N2G1CDDJHC 256Mx72 2GB , DDR2, 240-pin Fully Buffered DIMM, ECC, 128Mx8 Based, PC2-5300, DDR2-667-555, 30.35mm, Green Module (RoHS Compliant).
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SG5SD82N2G1CDDJUU
SG5SD82N2G1CDDJHC
256Mx72
240-pin
128Mx8
PC2-5300,
DDR2-667-555,
PC2-5300F-555-11-B_
AMB0680L4RJ8
HY5PS1G831CFP-Y5
PC2-5300F-555-11-B
SG5SD82N2G1CDDJSE
2rx8 pc2-4200u-444-12
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k4B2G1646
Abstract: K4S561632N K4B2G1646C k4t1g164qf K4T51163QI K4H641638Q K4B2G16 K4B2G1646C-HQH9 K4T1G084QF k4s281632O
Text: Apr. 2010 Consumer Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.
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K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-09-ALL-001
K9F2G08U0B
K9HCG08U1M-PCB0
K9NCG08U5M-PCB0
K9F1G08U0C
K9F4G08U0B-PCB0
K9F2G08U0B-PCB0
K9F4G08U0B
K9WBG08U1M
K9F1G08U0C-PCB0
K9G4G08U0B
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k4t1g164qe-hc
Abstract: M470T5663EH3 K4T1G084QE-HC M470T2863EH3 M470T2864EH M470T2864EH3
Text: SODIMM DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb E-die 64-bit Non-ECC 60FBGA & 84FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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200pin
64-bit
60FBGA
84FBGA
64Mbx16
64Mx64
M470T6464EHS
K4T1G164QE
k4t1g164qe-hc
M470T5663EH3
K4T1G084QE-HC
M470T2863EH3
M470T2864EH
M470T2864EH3
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H5PS1G83EFR-S5C
Abstract: DDR2-800-555
Text: SG1286UD212851UU April 10, 2009 Ordering Information Part Numbers Description Device Vendor SG1286UD212851HC 128Mx64 1GB , DDR2, 240-pin DIMM, Unbuffered, Non-ECC, 128Mx8 Based, PC2-6400, DDR2-800-555, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant).
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SG1286UD212851UU
SG1286UD212851HC
128Mx64
240-pin
128Mx8
PC2-6400,
DDR2-800-555,
HY5PS1G831CFP-S5
SG1286UD212851HE
H5PS1G83EFR-S5C
DDR2-800-555
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m378t5663eh3
Abstract: M378T2863EHS-CE7 M378T2863
Text: UDIMM DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 1Gb E-die 64/72-bit Non-ECC/ECC 60FBGA & 84FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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240pin
64/72-bit
60FBGA
84FBGA
K4T1G084QE
64Mbx16
64Mx64
M378T6464EHS
K4T1G164QE
m378t5663eh3
M378T2863EHS-CE7
M378T2863
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serial presence detect samsung 2010
Abstract: M392T5663FB M392T5663FBA
Text: Rev. 1.0, Oct. 2010 M392T2863FBA M392T5663FBA M392T5660FBA 240pin VLP Registered DIMM based on 1Gb F-die 60 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M392T2863FBA
M392T5663FBA
M392T5660FBA
240pin
serial presence detect samsung 2010
M392T5663FB
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Untitled
Abstract: No abstract text available
Text: SG5SD82N2G1BGDJUU March 25, 2009 Ordering Information Part Numbers Description AMB Vendor Device Vendor SG5SD82N2G1BGDJHC 256Mx72 2GB , DDR2, 240-pin Fully Buffered DIMM, ECC, 128Mx8 Based, PC2-6400, DDR2-800-555, 30.35mm, Green Module (RoHS Compliant). Label:
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SG5SD82N2G1BGDJUU
SG5SD82N2G1BGDJHC
256Mx72
240-pin
128Mx8
PC2-6400,
DDR2-800-555,
PC2-6400F-555-11-R_
AMB0780L4RJ8
HY5PS1G831CFP-S5
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m378t5663eh3-ce7
Abstract: M378T2863EHS-CE7 M378T5663EH3 M378T2863EHS k4t1g164qe M378T2863 DDR2 SDRAM ECC and Application Note
Text: UDIMM DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 1Gb E-die 64/72-bit Non-ECC/ECC 60FBGA & 84FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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240pin
64/72-bit
60FBGA
84FBGA
K4T1G084QE
64Mbx16
64Mx64
M378T6464EHS
K4T1G164QE
m378t5663eh3-ce7
M378T2863EHS-CE7
M378T5663EH3
M378T2863EHS
k4t1g164qe
M378T2863
DDR2 SDRAM ECC and Application Note
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL493T5663D-E6M/D5M/CCM-S1 REV: 1.0 General Information 2GB 256Mx72 DDR2 SDRAM ECC REGISTERED SO-RDIMM 200-PIN Description The VL493T5663D is a 256Mx72 DDR2 SDRAM high density SO-RDIMM. This memory module consists of eighteen
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VL493T5663D-E6M/D5M/CCM-S1
256Mx72
200-PIN
VL493T5663D
128Mx8
25-bit
200-pin
VN-081009
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL493T5663C-E6M/D5M/CCM REV: 1.3 General Information 2GB 256Mx72 DDR2 SDRAM ECC REGISTERED SO-RDIMM 200-PIN Description The VL493T5663C is a 256Mx72 DDR2 SDRAM high density SO-RDIMM. This memory module is dual rank, consists of eighteen CMOS 128Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, two 25-bit
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VL493T5663C-E6M/D5M/CCM
256Mx72
200-PIN
VL493T5663C
128Mx8
25-bit
200-pin
VN-081009
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M393T5160CZ0-C
Abstract: No abstract text available
Text: Preliminary 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb C-die 72-bit ECC 60FBGA with Pb-Free 63FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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240pin
72-bit
60FBGA
63FBGA
M393T5160CZ0-C
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