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    Samsung Semiconductor K4S643232ETC70

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    Samsung Semiconductor K4S643232E-TC500

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    Samsung Semiconductor K4S643232E-TC5000

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    Samsung Semiconductor K4S643232E-TC50

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    K4S643232E Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Type PDF
    K4S643232E Samsung Electronics 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL(3.3V Original PDF
    K4S643232E Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S643232E- Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL(3.3V) Original PDF
    K4S643232E-TC45 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S643232E-TC50 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S643232E-TC55 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S643232E-TC60 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S643232E-TC70 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S643232E-TC/L/E/N/I/P Samsung Electronics 512K x 32-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S643232E-TC/L/E/N/I/P Samsung Electronics 512K x 32-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S643232E-TC/L/E/N/I/P Samsung Electronics 512K x 32-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S643232E-TC-L-E-N-I-P Samsung Electronics 512K x 32-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S643232E-TC-L-E-N-I-P Samsung Electronics 512K x 32-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S643232E-TC-L-E-N-I-P Samsung Electronics 512K x 32-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S643232E-TE50 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL(3.3V) Original PDF
    K4S643232E-TE60 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL(3.3V) Original PDF
    K4S643232E-TE70 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL(3.3V) Original PDF
    K4S643232E-TI Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S643232E-TI60 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S643232E-TI70 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF

    K4S643232E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: K4S643232E-TE/N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 3.3V Extended Temperature 86-TSOP Revision 1.4 December 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.4 (Dec. 2001)


    Original     		PDF K4S643232E-TE/N 32bit 86-TSOP 90-Ball K4S643232E-T/S

    K4S643232E

    Abstract: No abstract text available
    Text: K4S643232E-TI/P CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Industrial Temperature Revision 1.2 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.2 Oct. 2001 K4S643232E-TI/P


    Original     		PDF K4S643232E-TI/P 32bit K4S643232E

    Untitled

    Abstract: No abstract text available
    Text: K4S643232E-TI/P CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Industrial Temperature Revision 1.0 January 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Jan. 2001 K4S643232E-TI/P


    Original     		PDF K4S643232E-TI/P 32bit 86-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.0 October 2000 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Oct. 2000 K4S643232E CMOS SDRAM Revision History


    Original     		PDF K4S643232E 32bit K4S643232E-40/55/7C K4S643232E-45 86-TSOP2-400F

    K4S643232E

    Abstract: No abstract text available
    Text: K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.3 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 Oct. 2001 K4S643232E CMOS SDRAM Revision History


    Original     		PDF K4S643232E 32bit K4S643232E-55 K4S643232E

    PPC823

    Abstract: MGT5100 MT48LC16M16A2 AN2248 0X0054 MT48LC32M16A2 PPC8260 MT46V64M8 equivalent MT48LC2M32B2 MT46V32M16
    Text: Application Note AN2248/D Rev. 1, 02/2002 Using the MGT5100 SDRAM Controller by Mark Jonas and Davide Santo Driver Information Systems Munich, Germany Introduction Synchronous Dynamic RAM SDRAM and Double Data Rate Synchronous Dynamic RAM (DDR-SDRAM or simply DDR) are among today’s preferred memories where


    Original     		PDF AN2248/D MGT5100 MGT5100 PPC823 MT48LC16M16A2 AN2248 0X0054 MT48LC32M16A2 PPC8260 MT46V64M8 equivalent MT48LC2M32B2 MT46V32M16

    Untitled

    Abstract: No abstract text available
    Text: K4S643233E-SE/N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 3.0V & 3.3V Extended Temperature 90-Ball FBGA Revision 1.5 April 2002 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.5 April 2002


    Original     		PDF K4S643233E-SE/N 32bit 90-Ball 2Mx32 K4S643234E-S K4S643232E-S K4S643233E-S

    IXF1002

    Abstract: OR4E06 TADM042G5 TDAT042G5
    Text: Quad Gb Ethernet Over SONET/SDH Bridge March 2003 IP Data Sheet • Robust 64-bit FIFO MAC interfaces with arbitration ■ Flexible flow control at ingress and egress. Software-provisioned flow control provided through MPU interface ■ SDRAM Controller with programmable


    Original     		PDF 64-bit MPC860-compatible OC-12c ck77mac] ETHER-1GQD-04-B1. IXF1002 OR4E06 TADM042G5 TDAT042G5

    K4S643232E

    Abstract: K4S643233E
    Text: K4S643233E-SE N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.0V & 3.3V) Extended Temperature TSOP / 90Ball FBGA (V DD/V DDQ 3.0V/3.0V, 3.3V/3.3V) Revision 1.4 November 2001 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4S643233E-SE 32bit 90Ball 2Mx32 K4S643234E-S K4S643232E-S K4S643233E-S K4S643232E K4S643233E