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    Samsung Semiconductor K4S510832M-TC75000

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    Bristol Electronics K4S510832M-TC75000 8
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    Samsung Semiconductor K4S510832MTC75

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    Bristol Electronics K4S510832MTC75 1
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    K4S510832M Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S510832M Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S510832M-TC1H Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S510832M-TC1L Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S510832M-TC75 Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S510832M-TC/TL1H Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S510832M-TC/TL1L Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S510832M-TC/TL75 Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S510832M-TL1H Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S510832M-TL1L Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S510832M-TL75 Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF

    K4S510832M Datasheets Context Search

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    K4S510832M

    Abstract: RA12
    Text: Preliminary CMOS SDRAM K4S510832M 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S510832M Preliminary CMOS SDRAM


    Original     		PDF K4S510832M 512Mbit K4S510832M A10/AP RA12

    K4S510832M

    Abstract: RA12
    Text: K4S510832M CMOS SDRAM 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May. 2002 K4S510832M CMOS SDRAM Revision History Revision 0.0 Mar. 2001


    Original     		PDF K4S510832M 512Mbit K4S510832M A10/AP RA12

    M377S2953MT3

    Abstract: M377S2953MT3-C1H M377S2953MT3-C1L
    Text: preliminary PC100 Registered DIMM M377S2953MT3 M377S2953MT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2953MT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2953MT3 consists of eighteen CMOS 64Mx8 bit


    Original     		PDF PC100 M377S2953MT3 M377S2953MT3 128Mx72 64Mx8, 64Mx8 400mil 18bits M377S2953MT3-C1H M377S2953MT3-C1L

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PC133/PC100 Unbuffered DIMM M374S2953MTS M374S2953MTS SDRAM DIMM 128Mx72 SDRAM DIMM with ECC based on 64Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S2953MTS is a 128M bit x 72 Synchronous


    Original     		PDF M374S2953MTS M374S2953MTS PC133/PC100 128Mx72 64Mx8, 400mil 168-pin

    K4S510

    Abstract: M374S2953MTS M374S2953MTS-C1H M374S2953MTS-C75
    Text: Preliminary PC133/PC100 Unbuffered DIMM M374S2953MTS M374S2953MTS SDRAM DIMM 128Mx72 SDRAM DIMM with ECC based on 64Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S2953MTS is a 128M bit x 72 Synchronous


    Original     		PDF PC133/PC100 M374S2953MTS M374S2953MTS 128Mx72 64Mx8, 400mil 168-pin K4S510 M374S2953MTS-C1H M374S2953MTS-C75

    M390S2953MT1

    Abstract: M390S2953MT1-C75 PC133 registered reference design
    Text: preliminary PC133 Registered DIMM M390S2953MT1 M390S2953MT1 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2953MT1 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2953MT1 consists of eighteen CMOS 64Mx8 bit


    Original     		PDF PC133 M390S2953MT1 M390S2953MT1 128Mx72 64Mx8, 64Mx8 400mil 18bits M390S2953MT1-C75 PC133 registered reference design

    M366S2953MTS

    Abstract: M366S2953MTS-C1L M366S2953MTS-C75 M366S3953MTS-C1H
    Text: Preliminary PC133/PC100 Unbuffered DIMM M366S2953MTS M366S2953MTS SDRAM DIMM 128Mx64 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S2953MTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC133/PC100 M366S2953MTS M366S2953MTS 128Mx64 64Mx8, 400mil 168-pin M366S2953MTS-C1L M366S2953MTS-C75 M366S3953MTS-C1H