K4S1G0632M-TC1H
Abstract: No abstract text available
Text: K4S1G0632M CMOS SDRAM Stacked 1Gbit SDRAM 64M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Dec. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Dec.2001 K4S1G0632M CMOS SDRAM Revision History
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K4S1G0632M
K4S1G0632M
864words
K4S1G0632M-TC1H
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PC133 registered reference design
Abstract: SS86
Text: Preliminary PC133/PC100 Low profile Registered DIMM M390S5658MTU M390S5658MTU SDRAM DIMM 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S5658MTU is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Sam-
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M390S5658MTU
M390S5658MTU
PC133/PC100
256Mx72
256Mx4,
256Mx4
400mil
18-bits
PC133 registered reference design
SS86
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DIN 7340
Abstract: B1a12 M390S5658MT1 M390S5658MT1-C75 PC133 registered reference design 256Mx4
Text: Preliminary PC133 Registered DIMM M390S5658MT1 M390S5658MT1 SDRAM DIMM 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S5658MT1 is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S5658MT1 consists of eighteen CMOS Stacked
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PDF
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PC133
M390S5658MT1
M390S5658MT1
256Mx72
256Mx4,
256Mx4
400mil
18-bits
DIN 7340
B1a12
M390S5658MT1-C75
PC133 registered reference design
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M377S5658MT3
Abstract: M377S5658MT3-C1H M377S5658MT3-C1L 256Mx4
Text: Preliminary PC100 Registered DIMM M377S5658MT3 M377S5658MT3 SDRAM DIMM Intel 1.2 ver Base 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S5658MT3 is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S5658MT3 consists of eighteen CMOS Stacked
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Original
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PDF
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PC100
M377S5658MT3
M377S5658MT3
256Mx72
256Mx4,
256Mx4
400mil
18-bits
M377S5658MT3-C1H
M377S5658MT3-C1L
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DIN 7340
Abstract: M390S5658MT1 M390S5658MT1-C75 PC133 registered reference design
Text: M390S5658MT1 PC133 Registered DIMM M390S5658MT1 SDRAM DIMM 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S5658MT1 is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S5658MT1 consists of eighteen CMOS Stacked
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Original
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PDF
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M390S5658MT1
PC133
M390S5658MT1
256Mx72
256Mx4,
256Mx4
400mil
18-bits
DIN 7340
M390S5658MT1-C75
PC133 registered reference design
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DIN 7340
Abstract: B1A10 M390S5658MTU M390S5658MTU-C1H M390S5658MTU-C1L M390S5658MTU-C75 PC133 registered reference design b1a12
Text: Preliminary PC133/PC100 Low profile Registered DIMM M390S5658MTU M390S5658MTU SDRAM DIMM 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S5658MTU is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S5658MTU consists of eighteen CMOS Stacked
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Original
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PDF
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PC133/PC100
M390S5658MTU
M390S5658MTU
256Mx72
256Mx4,
256Mx4
400mil
18-bits
DIN 7340
B1A10
M390S5658MTU-C1H
M390S5658MTU-C1L
M390S5658MTU-C75
PC133 registered reference design
b1a12
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M377S5658MT3-C1H
Abstract: M377S5658MT3 M377S5658MT3-C1L samsung capacitance Manufacturing location b1a12
Text: PC100 Registered DIMM M377S5658MT3 M377S5658MT3 SDRAM DIMM Intel 1.2 ver Base 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S5658MT3 is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S5658MT3 consists of eighteen CMOS Stacked
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Original
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PDF
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PC100
M377S5658MT3
M377S5658MT3
256Mx72
256Mx4,
256Mx4
400mil
18-bits
M377S5658MT3-C1H
M377S5658MT3-C1L
samsung capacitance Manufacturing location
b1a12
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