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Samsung Semiconductor K4F641612D-TC60 4M X 16 FAST PAGE DRAM, 60 ns, PDSO50
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K4F641612D Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K4F641612D		Samsung Electronics	4M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet		Original	PDF
K4F641612D		Samsung Electronics	4M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet		Original	PDF
K4F641612D-TC		Samsung Electronics	4M x 16-Bit CMOS Dynamic RAM with Fast Page Mode		Original	PDF
K4F641612D-TI		Samsung Electronics	4M x 16-Bit CMOS Dynamic RAM with Fast Page Mode		Original	PDF
K4F641612D-TP45		Samsung Electronics	4M x 16-Bit Cmos Dynamic Ram With Extended Data Out		Original	PDF
K4F641612D-TP50		Samsung Electronics	4M x 16-Bit Cmos Dynamic Ram With Extended Data Out		Original	PDF
K4F641612D-TP60		Samsung Electronics	4M x 16-Bit Cmos Dynamic Ram With Extended Data Out		Original	PDF

K4F641612D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K4F641612D Abstract: K4F661612D Text: Industrial Temperature K4F661612D, K4F641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low pow er)	Original	K4F661612D, K4F641612D 16bit 4Mx16 400mil K4F641612D K4F661612D	PDF
K4F641612D Abstract: K4F661612D Text: K4F661612D, K4F641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power)	Original	K4F661612D, K4F641612D 16bit 4Mx16 400mil K4F641612D K4F661612D	PDF
Untitled Abstract: No abstract text available Text: M372V0805DT0-C DRAM MODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M components are applied to this module. M372V0805DT0-C M372V0805DT0-C DRAM MODULE M372V0805DT0-C Fast Page Mode	Original	M372V0805DT0-C 8Mx72 4Mx16 M372V0805DT0-C 8Mx72bits	PDF
Untitled Abstract: No abstract text available Text: M372V0405DT0-C DRAM MODULE M372V0405DT0-C Fast Page Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4 , 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372V0405DT0-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M372V0405DT0-C consists of four 4Mx16bits & two 4Mx4bits	Original	M372V0405DT0-C M372V0405DT0-C 4Mx16 4Mx72bits 4Mx16bits 400mil 168-pin	PDF
Untitled Abstract: No abstract text available Text: M372V0405DT0-C DRAM MODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M DRAM components are applied to this module. M372V0405DT0-C M372V0405DT0-C DRAM MODULE	Original	M372V0405DT0-C 4Mx72 4Mx16 M372V0405DT0-C 4Mx72bits	PDF
Untitled Abstract: No abstract text available Text: M372V0805DT0-C DRAM MODULE M372V0805DT0-C Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372V0805DT0-C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung M372V0805DT0-C consists of eight	Original	M372V0805DT0-C M372V0805DT0-C 4Mx16 8Mx72bits 4Mx16bits 400mil 168-pin	PDF