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    K4E641612B Search Results

    K4E641612B Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4E641612B Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E641612B-L Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E641612B-TC Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E641612B-TC45 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns Original PDF
    K4E641612B-TC50 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns Original PDF
    K4E641612B-TC60 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns Original PDF
    K4E641612B-TL45 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power Original PDF
    K4E641612B-TL50 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power Original PDF
    K4E641612B-TL60 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power Original PDF

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    K4E641612B

    Abstract: K4E661612B
    Text: K4E661612B, K4E641612B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		PDF K4E661612B, K4E641612B 16bit 4Mx16 400mil K4E641612B K4E661612B

    capacitor taa

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0404BT2-L 8Byte 4Mx64 SODIMM 4Mx16 base Revision 0.2 June 1998 DRAM MODULE M466F0404BT2-L M466F0404BT2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0404BT2-L is a 4Mx64bits Dynamic


    Original     		PDF M466F0404BT2-L 4Mx64 4Mx16 M466F0404BT2-L 4Mx16, 4Mx64bits cycles/128ms, capacitor taa

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M374F0805BT1-C Unbuffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Jan. 1999 DRAM MODULE Revision History Version 0.0 (Jan. 1999) • The 4th generation of 64Mb DRAM components are applied to this module. M374F0805BT1-C DRAM MODULE M374F0805BT1-C


    Original     		PDF M374F0805BT1-C 8Mx72 4Mx16 M374F0805BT1-C 8Mx72bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M366F080 8 4BT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M366F080(8)4BT1-C M366F080(8)4BT1-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)4BT1-C is a 8Mx64bits Dynamic


    Original     		PDF M366F080 8Mx64 4Mx16 4Mx16, 8Mx64bits 4Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: M372F0405BT0-C DRAM MODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M372F0405BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M372F0405BT0-C 4Mx72 4Mx16 M372F0405BT0-C 100Min 540Min) 100Max

    TAA 141

    Abstract: No abstract text available
    Text: DRAM MODULE M366F040 8 4BT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M366F040(8)4BT1-C M366F040(8)4BT1-C EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F040(8)4BT1-C is a 4Mx64bits Dynamic


    Original     		PDF M366F040 4Mx64 4Mx16 4Mx16, 4Mx64bits 4Mx16bits TAA 141

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0804BT1-L 8Byte 8Mx64 SODIMM 4Mx16 base Revision 0.1 June 1998 DRAM MODULE M466F0804BT1-L Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M466F0804BT1-L 8Mx64 4Mx16 M466F0804BT1-L 4Mx16, 8Mx64bits 150Max

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M374F0405BT1-C Unbuffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied to this module. M374F0405BT1-C DRAM MODULE M374F0405BT1-C


    Original     		PDF M374F0405BT1-C 4Mx72 4Mx16 M374F0405BT1-C 4Mx72bits