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    Samsung Electronics Co. Ltd K4E640412ETL50

    16M X 4 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT EDO DRAM, 16MX4, 50ns, CMOS, PDSO32
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    ComSIT USA K4E640412ETL50 300
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    K4E640412E Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4E640412E Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Data Sheet Original PDF
    K4E640412E Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Data Sheet Original PDF
    K4E640412E-JI45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E640412E-JI50 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E640412E-JI60 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E640412E-JP45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E640412E-JP50 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E640412E-JP60 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E640412E-TI45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E640412E-TI50 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E640412E-TI60 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E640412E-TP45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E640412E-TP50 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E640412E-TP60 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF

    K4E640412E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K4E640412E

    Abstract: K4E660412E
    Text: Industrial Temperature K4E660412E,K4E640412E CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		K4E660412E K4E640412E 16Mx4 reliabil4E640412E 400mil K4E640412E PDF

    K4E640412E

    Abstract: K4E660412E K4E640412E-TC
    Text: K4E660412E,K4E640412E CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS -only refresh and Hidden


    Original     		K4E660412E K4E640412E 16Mx4 Ext4E640412E 400mil K4E640412E K4E640412E-TC PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M372F160 8 0EJ(T)0-C M372F160(8)0EJ(T)0-C EDO Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung M372F160(8)0EJ(T)0-C is a 16Mx72bits Dynamic RAM high density memory module. The Samsung


    Original     		M372F160 16Mx4, 16Mx72bits 16Mx4bits 400mil 168-pin PDF

    A 1458

    Abstract: ma 1458 IC UA 1458 K4E640412E
    Text: DRAM MODULE M372F320 8 0ET1-C M372F320(8)0ET1-C EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372F320(8)0ET1-C is a 32Mx72bits Dynamic RAM high density memory module. The Samsung M372F320(8)0ET1-C consists of thirty-six CMOS 16Mx4bits


    Original     		M372F320 16Mx4, 32Mx72bits 16Mx4bits 400mil 168-pin A 1458 ma 1458 IC UA 1458 K4E640412E PDF