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    K4B2G0846D

    Abstract: K4B2G0846D-HCK0 k4b2g0846 K4B2G0846D-HCMA K4B2G0446D K4B2G0446D-HCH9
    Text: Rev. 1.1, Sep. 2010 K4B2G0446D K4B2G0846D 2Gb D-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G0446D K4B2G0846D 78FBGA K4B2G0846D K4B2G0846D-HCK0 k4b2g0846 K4B2G0846D-HCMA K4B2G0446D-HCH9

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL31B1G63A-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B1G63A is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge


    Original     		PDF VL31B1G63A-K0/K9/F8/E7S 1Gx72 240-PIN VL31B1G63A 512Mx8 240-pin 240-pin,

    K4B2G0846D-HCK0

    Abstract: k4b2g0846dhck0 K4B2G0846D-HCMA tis87
    Text: Rev. 1.11, Nov. 2010 K4B2G0446D K4B2G0846D 2Gb D-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G0446D K4B2G0846D 78FBGA K4B2G0846D-HCK0 k4b2g0846dhck0 K4B2G0846D-HCMA tis87

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL31B1G63E-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM VLP ECC UNBUFFERED DIMM 240-PIN Description The VL31B1G63E is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge


    Original     		PDF VL31B1G63E-K0/K9/F8/E7S 1Gx72 240-PIN VL31B1G63E 512Mx8 240-pin 240-pin,

    K4B2G0846D-HCH9

    Abstract: K4B2G0846D-HCMA K4B2G0846D-HCK0 K4B2G0446D-HCH9 K4B2G0846D K4B2G0846D-HCF8 K4B2G0446D K4B2G0446D-HCK0 K4B2G0446D-HCMA DDR3-1866
    Text: Rev. 1.13, May. 2011 K4B2G0446D K4B2G0846D 2Gb D-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G0446D K4B2G0846D 78FBGA K4B2G0846D-HCH9 K4B2G0846D-HCMA K4B2G0846D-HCK0 K4B2G0446D-HCH9 K4B2G0846D K4B2G0846D-HCF8 K4B2G0446D K4B2G0446D-HCK0 K4B2G0446D-HCMA DDR3-1866

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL31B1K63A-K0/K9/F8S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B1K63A is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is four rank, consists of thirty-six CMOS 256Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge


    Original     		PDF VL31B1K63A-K0/K9/F8S 1Gx72 240-PIN VL31B1K63A 256Mx8 240-pin 240-pin, PC3-12800/-0

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL31B5263A-K0/K9/F8/E7S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B5263A is a 512Mx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 256Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge


    Original     		PDF VL31B5263A-K0/K9/F8/E7S 512Mx72 240-PIN VL31B5263A 256Mx8 240-pin 240-pin,

    K4B2G0846D-HCK0

    Abstract: 240-PIN DDR3-1066 DDR3-1333 PC3-10600 PC3-12800 K4B2G0846D-HC
    Text: Product Specifications PART NO.: VL31B5263F-K0/K9/F8/E7S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ULP ECC UNBUFFERED DIMM 240-PIN Description The VL31B5263F is a 512Mx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of


    Original     		PDF VL31B5263F-K0/K9/F8/E7S 512Mx72 240-PIN VL31B5263F 256Mx8 240-pin 240-pin, K4B2G0846D-HCK0 DDR3-1066 DDR3-1333 PC3-10600 PC3-12800 K4B2G0846D-HC

    K4B2G0846D-HCK0

    Abstract: DDR3-1333 DIMM Spec K4B2G0846D K4B2G samsung K9 samsung dimm DDR3 SPD 240-PIN DDR3-1066 DDR3-1333 PC3-10600
    Text: Product Specifications PART NO.: VL31B1G63A-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B1G63A is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge


    Original     		PDF VL31B1G63A-K0/K9/F8/E7S 1Gx72 240-PIN VL31B1G63A 512Mx8 240-pin 240-pin, K4B2G0846D-HCK0 DDR3-1333 DIMM Spec K4B2G0846D K4B2G samsung K9 samsung dimm DDR3 SPD DDR3-1066 DDR3-1333 PC3-10600

    K4B2G0846D-HCK0

    Abstract: K4B2G0846D-HC K4B2G0846D-HCK 240-PIN DDR3-1066 DDR3-1333 PC3-10600 PC3-12800 SAMSUNG UDIMM DDR3 A1185
    Text: Product Specifications PART NO.: VL31B5263A-K0/K9/F8/E7S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B5263A is a 512Mx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 256Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge


    Original     		PDF VL31B5263A-K0/K9/F8/E7S 512Mx72 240-PIN VL31B5263A 256Mx8 240-pin 240-pin, K4B2G0846D-HCK0 K4B2G0846D-HC K4B2G0846D-HCK DDR3-1066 DDR3-1333 PC3-10600 PC3-12800 SAMSUNG UDIMM DDR3 A1185

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL41B5263A-K0/K9/F8/E7S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41B5263A is a 512Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module is dual rank, consists


    Original     		PDF VL41B5263A-K0/K9/F8/E7S 512Mx72 204-PIN VL41B5263A 256Mx8 204-pin

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL31B5263F-K0/K9/F8/E7S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ULP ECC UNBUFFERED DIMM 240-PIN Description The VL31B5263F is a 512Mx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of


    Original     		PDF VL31B5263F-K0/K9/F8/E7S 512Mx72 240-PIN VL31B5263F 256Mx8 240-pin 240-pin,

    DDR3-1066

    Abstract: K4B2G0846D-HCK0 240-PIN DDR3-1333 PC3-10600 PC3-12800 samsung DDR3 SDRAM 2GB
    Text: Product Specifications PART NO.: VL31B1K63A-K0/K9/F8S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B1K63A is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is four rank, consists of thirty-six CMOS 256Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge


    Original     		PDF VL31B1K63A-K0/K9/F8S 1Gx72 240-PIN VL31B1K63A 256Mx8 240-pin 240-pin, PC3-12800YP DDR3-1066 K4B2G0846D-HCK0 DDR3-1333 PC3-10600 PC3-12800 samsung DDR3 SDRAM 2GB

    VL41

    Abstract: DDR3-1066 DDR3-1333 PC3-10600 PC3-12800 K4B2G0846D-HCK0
    Text: Product Specifications PART NO.: VL41B5263A-K0/K9/F8/E7S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41B5263A is a 512Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module is dual rank, consists


    Original     		PDF VL41B5263A-K0/K9/F8/E7S 512Mx72 204-PIN VL41B5263A 256Mx8 204-pin 204-pin, VL41 DDR3-1066 DDR3-1333 PC3-10600 PC3-12800 K4B2G0846D-HCK0

    K4B2G0446D

    Abstract: No abstract text available
    Text: Rev. 1.13, May. 2011 K4B2G0446D K4B2G0846D 2Gb D-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G0446D K4B2G0846D 78FBGA K4B2G0446D