Untitled
Abstract: No abstract text available
Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = +25°C • Low Gate Threshold Voltage Low Input Capacitance 100V 6.0Ω @ VGS = 10V 0.17 Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating
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BSS123
AEC-Q101
DS30366
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PDF
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Untitled
Abstract: No abstract text available
Text: BSS123W N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Lead Free/RoHS Compliant Note 1
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BSS123W
AEC-Q101
OT323
J-STD-020
MIL-STD-202,
DS30368
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PDF
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K23 mOSFET
Abstract: BSS123W BSS123W-7-F
Text: BSS123W N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Lead Free/RoHS Compliant Note 1
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BSS123W
AEC-Q101
OT323
J-STD-020
MIL-STD-202,
DS30368
K23 mOSFET
BSS123W
BSS123W-7-F
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PDF
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Untitled
Abstract: No abstract text available
Text: BSS123W N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Totally Lead-Free & Fully RoHS compliant Notes 1 & 2
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Original
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BSS123W
OT323
J-STD-020
MIL-STD-202,
DS30368
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PDF
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K23 mOSFET
Abstract: No abstract text available
Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating
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Original
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BSS123
DS30366
K23 mOSFET
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PDF
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K23 mOSFET
Abstract: K23 mOSFET DIAGRAM DS30366
Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating
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Original
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BSS123
DS30366
K23 mOSFET
K23 mOSFET DIAGRAM
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PDF
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K23 SOT23 MARKING
Abstract: No abstract text available
Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating
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Original
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BSS123
DS30366
K23 SOT23 MARKING
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PDF
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Untitled
Abstract: No abstract text available
Text: BSS123W N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID TA = +25°C 170mA making it ideal for high efficiency power management applications. • • • • • • • • Applications Mechanical Data • • • • • V BR DSS RDS(ON) 100V
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Original
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BSS123W
170mA
DS30368
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PDF
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Untitled
Abstract: No abstract text available
Text: BSS123W N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 100V 6.0Ω @ VGS = 10V ID TA = +25°C 170mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance,
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Original
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BSS123W
170mA
AEC-Q101
DS30368
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PDF
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BSS123Q-13
Abstract: DS30366 bss123 c23 K23 SOT23 K23 mOSFET BSS123Q-7
Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating
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Original
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BSS123
DS30366
BSS123Q-13
bss123 c23
K23 SOT23
K23 mOSFET
BSS123Q-7
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PDF
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Untitled
Abstract: No abstract text available
Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating
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Original
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BSS123
DS30366
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PDF
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kingston ddr2 memory schematic
Abstract: MDLS-20265 LCM-S01602 lcm-s02402 KVR667D2S5 crucial 512mb sodimm Vishay SOT23 MARKING G7 MDLS-20189 OPTREX C-51505 MDLS-24265
Text: LatticeECP2 Advanced Evaluation Board User’s Guide January 2009 Revision: EB23_01.6 LatticeECP2 Advanced Evaluation Board User’s Guide Lattice Semiconductor Introduction The LatticeECP2 Advanced Evaluation Board provides a convenient platform to evaluate, test and debug user
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Original
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LatticeECP2-50
672-ball
64-bit
kingston ddr2 memory schematic
MDLS-20265
LCM-S01602
lcm-s02402
KVR667D2S5
crucial 512mb sodimm
Vishay SOT23 MARKING G7
MDLS-20189
OPTREX C-51505
MDLS-24265
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PDF
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intel g41 crb
Abstract: AJ33 AJ34 AJ35 AJ36 AJ37 AJ38 AJ39 AJ40 AJ41 AJ42 schematic intel g41 g31 crb socket am3 pinout g41 crb MOSFET BA7 intel G41 MOTHERBOARD crb LGA1366 ISL6334EVAL1Z
Text: Technical Brief 486 ISL6334EVAL1Z User Guide Board Specifications 1. Intel VR11.1 compliant. 2. 4-Phase, 130W, 400kHz, Load Line = 0.8mΩ. 3. Socket: LGA1366, die sensing, can be configured for motherboard sensing. 4. 6 Layer Board: Top/Bottom - 0.5oz plated, 1.5oz
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ISL6334EVAL1Z
400kHz,
LGA1366,
ISL6612A,
ISL6622)
ISL6596/ISL6620)
TB486
intel g41 crb
AJ33 AJ34 AJ35 AJ36 AJ37 AJ38 AJ39 AJ40 AJ41 AJ42
schematic intel g41
g31 crb
socket am3 pinout
g41 crb
MOSFET BA7
intel G41 MOTHERBOARD crb
LGA1366
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PDF
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ALC 655
Abstract: RTL8101L W83L517 W83L950 BE220 MOSFET A13 MOSFET B20 p03 RTL8101bl
Text: 5 4 3 2 1 SOCKET 479 Banias 478 uFCPGA MS1003 BLOCK DIAGRAM PAGE 3,4,5 D D HOST BUS 100MHZ 4X NORTH BRIDGE CRT DISPLAY PAGE 18 SYS POWER DDR DRAM 100/133MHZ 1X Odem MCH-M LCD DISPLAY VGA PAGE 19 PAGE 6,7,8 M10-P PAGE 14,15,16 LINEAR REGULATOR VCCP VCCA VCC_MCH
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Original
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MS1003
100MHZ
66MHz
100/133MHZ
M10-P
66MHZ
MAX1907
SC1486
MAX1999
SG4Mx32
ALC 655
RTL8101L
W83L517
W83L950
BE220
MOSFET A13
MOSFET B20 p03
RTL8101bl
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PDF
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|
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WPC775L
Abstract: G5281RC1U-GP TPS51125 SCD22U6D3V2KX-1GP SNLVC1G08DCKRG4-GP 750R2F-GP 51125 htc one x SCD1U16V2KX-3GP wistron
Text: 5 4 3 2 S13 Block Diagram DDRII Slot 0 8 667/800 DDRII 667/800 MHz Channel A DDRII Slot 1 9 667/800 DDRII 667/800 MHz Channel B 1 CPU V_CORE Project code PCB Number Revision Thermal & Fan G792 21 AMD S1G2 CPU : 91.4H801.001 : 48.4H801.0SB : SB INPUTS OUTPUTS
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638-Pin
4H801
ISL6265
TPS51124
ICS9LPR480
16X16
RS780M
TPS51125
RS780M
WPC775L
G5281RC1U-GP
TPS51125
SCD22U6D3V2KX-1GP
SNLVC1G08DCKRG4-GP
750R2F-GP
51125
htc one x
SCD1U16V2KX-3GP
wistron
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PDF
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LC1 D12 P7
Abstract: APL1805 P55 MOSFET which is used in inverter s3ct C540 DIODE u3037 MLT 22 MOSFET AUDIO AMPLIFIER LC1 D18 P7 fet B20 p03 CDL 0844 diode S4 68a
Text: A B C Switching Power Max1907AETL 32 INPUTS OUTPUT DCBATOUT VCC_CORE CPU PIV Banias ULV/LV 900MHz/1GHz CLOCK Generator 1.2/1.05V DC/DC TPS5110 INPUTS 4,5 HOST BUS 400MHz CRT 1D2V_S0 DDR DRAM Socket *2 1D05V_S0 DC/DC&CHARGER DDR 266 6,7,8 9,10,11 36 13 HDD
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Max1907AETL
ICS950813CG
900MHz/1GHz
TPS5110
400MHz
Max1645
R5C551
DMA-100
TPS5130
82562ET
LC1 D12 P7
APL1805
P55 MOSFET which is used in inverter
s3ct
C540 DIODE
u3037
MLT 22 MOSFET AUDIO AMPLIFIER
LC1 D18 P7
fet B20 p03 CDL 0844
diode S4 68a
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PDF
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W83L950
Abstract: ragpc W83L517 855PM-MCH J12D1 fds66794 10kf12 TP4666 MAX1907 25VPW
Text: 5 4 3 2 1 SOCKET 479 Banias 478 uFCPGA MS1003 BLOCK DIAGRAM PAGE 3,4,5 D D HOST BUS 100MHZ 4X NORTH BRIDGE CRT DISPLAY PAGE 18 SYS POWER DDR DRAM 100/133MHZ 1X Odem MCH-M LCD DISPLAY VGA PAGE 19 PAGE 6,7,8 M10-P PAGE 14,15,16 REGULAR VCCP VCCA VCC_MCH VCC FOR M10P
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Original
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MS1003
100MHZ
66MHz
100/133MHZ
M10-P
66MHZ
MAX1907
SC1486
MAX1999
SG4Mx32
W83L950
ragpc
W83L517
855PM-MCH
J12D1
fds66794
10kf12
TP4666
MAX1907
25VPW
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PDF
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diode in48
Abstract: IN58 diode SN105125
Text: User's Guide SBAU186 – March 2011 DDC264EVM User's Guide DDC264EVM This user's guide describes the characteristics, operation, and use of the DDC264EVM. This evaluation module EVM is an evaluation kit for evaluating the DDC264, a 64-channel, current input, 20-bit
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Original
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SBAU186
DDC264EVM
DDC264EVM
DDC264EVM.
DDC264,
64-channel,
20-bit
DDC264
DDC264EVMm
diode in48
IN58 diode
SN105125
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PDF
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diode C531
Abstract: c531 diode lga775 schematic transistor C535 60N02R C536 VCC3 1156 01 85n02 C532 diode u504
Text: NCP5318DEMO NCP5318 Four Phase Demonstration Board Note Switching Regulator Controller http://onsemi.com DEMONSTRATION NOTE Features Protection Features • Programmable 2/3/4 Phase Operation • Lossless Current Sensing • Enhanced V2 Control Method Provides Fast Transient
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Original
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NCP5318DEMO
NCP5318
NCP5318DEMO/D
diode C531
c531 diode
lga775 schematic
transistor C535
60N02R
C536
VCC3 1156 01
85n02
C532 diode
u504
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PDF
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csc-b1
Abstract: csc-b1 transformer csc-b1 transformer diagram MS1020 W83L517 W83L950 R2643 M2K5 Socket AM2 R2617
Text: 5 4 3 2 1 SOCKET 479 Banias 478 uFCPGA MS1020 BLOCK DIAGRAM PAGE 3,4,5 D D HOST BUS 100MHZ 4X NORTH BRIDGE CRT DISPLAY PAGE 18 SYS POWER DDR DRAM 100/133MHZ 1X Odem MCH-M LCD DISPLAY VGA PAGE 27 PAGE 6,7,8 M18 PAGE 15,16,19 REGULAR VCCP VCCA VCC_MCH VCC FOR M10P
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Original
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MS1020
100MHZ
66MHz
100/133MHZ
66MHZ
MAX1907
SC1486
MAX1999
128MB
32bit
csc-b1
csc-b1 transformer
csc-b1 transformer diagram
W83L517
W83L950
R2643
M2K5
Socket AM2
R2617
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PDF
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UP7711U8
Abstract: RTM880T-792-LF max17480G rtl8112 UP7711 UP7714BMA5-00 RS780MN rtm880t G780P11U IT8752E
Text: 5 4 3 2 1 K40AA SCHEMATIC R1.2 D D Content PAGE PAGE Content SYSTEM PAGE REF. C B A 3 4 5 6 7 8 9 10 11 12 13 14 15 20 21 22 23 24 25 29 30 31 32 33 34 35 36 37 38 40 41 42 43 44 45 46 48 50 51 52 53 56 57 58 60 61 62 63 65 66 69 70 71 72 73 74 75 76 77 SCHEMATIC INFORMATION
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K40AA
CLK-ICS9LPR363DGLF-T
EC-IT8512
RTL8111C
CODEC-ALC663
AMP-1431
UP7704U8
220mA/350mA
1UF/25V
UP7711U8
RTM880T-792-LF
max17480G
rtl8112
UP7711
UP7714BMA5-00
RS780MN
rtm880t
G780P11U
IT8752E
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PDF
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Untitled
Abstract: No abstract text available
Text: International g K]Rectifier HEXFRED PD-2.375 Provisional Data Sheet HFA45HC120C ULTRA FAST, SOFT RECOVERY DIODE Features: Major Ratings and Characteristics Characteristics — — — — — — — — — Units 1200 V lF AV 28 A trr (per leg) 135 ns
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OCR Scan
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HFA45HC120C
00A//1S,
00A/pS,
TD-258AA
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PDF
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Untitled
Abstract: No abstract text available
Text: 000 PWR-82331 and PWR-82333 ILC DATA DEVICE _ _ CORPORATION_ SMART POWER 3-PHASE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82331 and PWR-82333 are 30A 3-phase motor drive hybrids. The PW R-82331 has a 200V rating and uses MOSFETs in the output stage while the
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OCR Scan
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PWR-82331
PWR-82333
PWR-82333
R-82331
8233X
PWR-82331/333
|
PDF
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TT 2188 transistor
Abstract: 12w transistor 82331
Text: QQB PWR-82331 and PWR-82333 ILC DATA DEVICE _ CORPORATIONS_ SMART POWER 3-PHASE MOTOR DRIVES ê: DESCRIPTION APPLICATIONS The PWR-82331 and PW R-82333 are 30 A 3-phase m otor drive hybrids. The PWR-82331 has a +200 V rating and uses M O SFETs in the output stage
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OCR Scan
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PWR-82331
PWR-82333
R-82331/333
PWR-82333
TT 2188 transistor
12w transistor
82331
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PDF
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