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    K20J Search Results

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    K20J Price and Stock

    Vishay Dale CRCW08052K20JNEBC

    RES 2.2K OHM 5% 1/8W 0805
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    DigiKey CRCW08052K20JNEBC Cut Tape 39,435 1
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    CRCW08052K20JNEBC Digi-Reel 39,435 1
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    Vishay Dale CRCW04026K20JNED

    RES SMD 6.2K OHM 5% 1/16W 0402
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    DigiKey CRCW04026K20JNED Cut Tape 27,000 1
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    CRCW04026K20JNED Digi-Reel 27,000 1
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    Vishay Dale CRCW12101K20JNEA

    RES SMD 1.2K OHM 5% 1/2W 1210
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    DigiKey CRCW12101K20JNEA Digi-Reel 17,809 1
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    Vishay Dale CRCW12066K20JNEA

    RES SMD 6.2K OHM 5% 1/4W 1206
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    DigiKey CRCW12066K20JNEA Cut Tape 14,852 1
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    CRCW12066K20JNEA Digi-Reel 14,852 1
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    Vishay Dale CRCW12062K20JNEB

    RES SMD 2.2K OHM 5% 1/4W 1206
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    K20J Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    toshiba K20J50D

    Abstract: K20J50D TK20J50D k20j50 SC-65 VDD400
    Text: K20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K20J50D Switching Regulator Applications 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 ＋0.3 －0.25 Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage


    Original     		TK20J50D toshiba K20J50D K20J50D TK20J50D k20j50 SC-65 VDD400 PDF

    K20J60T

    Abstract: k20j60 TK20J60T SC-65
    Text: K20J60T 東芝電界効果トランジスタ シリコンNチャネルMOS形 DTMOS K20J60T ○ スイッチングレギュレータ用 単位: mm 漏れ電流が低い。 : IDSS = 100 A (最大) (VDS = 600V) 取り扱いが簡単な､エンハンスメントタイプです。


    Original     		TK20J60T -55150/W K20J60T k20j60 TK20J60T SC-65 PDF

    K20J50D

    Abstract: toshiba K20J50D
    Text: K20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K20J50D Switching Regulator Applications Unit: mm 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 ＋0.3 －0.25 Drain-source voltage VDSS 500 V Gate-source voltage


    Original     		TK20J50D K20J50D toshiba K20J50D PDF

    K20J60U

    Abstract: k20j60 TK20J60U power Diode 200V 10A SC-65
    Text: K20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K20J60U Switching Regulator Applications Unit: mm VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V (Note 1) ID 20 Pulse (t = 1 ms) (Note 1) IDP 40 A 1 Drain power dissipation (Tc = 25°C)


    Original     		TK20J60U K20J60U k20j60 TK20J60U power Diode 200V 10A SC-65 PDF

    K20J60T

    Abstract: TK20J60T k20j60 SC-65
    Text: K20J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K20J60T Switching Regulator Applications Unit: mm 20.0±0.3 9.0 2.0 3.3max. 1.0 2.0 Low drain-source ON resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original     		TK20J60T K20J60T TK20J60T k20j60 SC-65 PDF

    toshiba K20J50D

    Abstract: k20j50 K20J50D TK20J50D
    Text: K20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K20J50D Switching Regulator Applications Unit: mm 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 ＋0.3 －0.25 Drain-source voltage VDSS 500 V Gate-source voltage


    Original     		TK20J50D toshiba K20J50D k20j50 K20J50D TK20J50D PDF

    K20J60T

    Abstract: k20j60 TK20 tk20j60t
    Text: K20J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K20J60T Switching Regulator Applications Unit: mm 20.0±0.3 9.0 2.0 3.3max. 1.0 2.0 Low drain-source ON resistance: RDS (ON) = 0.165Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original     		TK20J60T K20J60T k20j60 TK20 tk20j60t PDF

    toshiba K20J50D

    Abstract: No abstract text available
    Text: K20J50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K20J50D 単位: mm スイッチングレギュレータ用 1.0 2.0 4.5 Ф3.2±0.2 15.9max. : |Yfs| = 8.5 S (標準) (VDS = 500 V) 2.0 取り扱いが簡単なエンハンスメントタイプです。


    Original     		TK20J50D toshiba K20J50D PDF

    k20j60

    Abstract: K20J60U
    Text: K20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K20J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V 1.0 0.3 0.25 5.45 ± 0.2 5.45 ± 0.2 4.8 MAX. Unit


    Original     		TK20J60U k20j60 K20J60U PDF

    toshiba K20J50D

    Abstract: K20J50D TK20J50D k20j50 SC-65
    Text: K20J50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K20J50D スイッチングレギュレータ用 単位: mm 1.0 2.0 (VDS = 500 V) : Vth = 2.0～4.0 V (VDS = 10 V, ID = 1 mA) 2.0 3.3max. 取り扱いが簡単なエンハンスメントタイプです。


    Original     		TK20J50D toshiba K20J50D K20J50D TK20J50D k20j50 SC-65 PDF

    K20J50D

    Abstract: No abstract text available
    Text: K20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII K20J50D Switching Regulator Applications Unit: mm 20.5 ± 0.5 2.0 ± 0.3 Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V ID 20 DC (Note 1) Drain current IDP 80


    Original     		TK20J50D K20J50D PDF

    K20J60U

    Abstract: k20j60 TK20J60U SC-65 k20j
    Text: K20J60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K20J60U ○ スイッチングレギュレータ用 単位: mm 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準) z 漏れ電流が低い。 : IDSS = 100 A (最大) (VDS = 600V)


    Original     		TK20J60U K20J60U k20j60 TK20J60U SC-65 k20j PDF

    Untitled

    Abstract: No abstract text available
    Text: K20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K20J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 ＋0.3 －0.25


    Original     		TK20J60U PDF

    k20j60u

    Abstract: 10A16 k20j60 TK20J60U SC-65 3012S
    Text: K20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K20J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 ＋0.3 －0.25


    Original     		TK20J60U k20j60u 10A16 k20j60 TK20J60U SC-65 3012S PDF