SC-65
Abstract: TK16J55D K16J55D
Text: K16J55D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K16J55D 単位: mm ○ スイッチングレギュレータ用 20.0±0.3 2.0 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.5 S (標準) 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 550 V)
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TK16J55D
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TK16J55
Abstract: No abstract text available
Text: K16J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K16J55D Switching Regulator Applications Symbol Rating Unit Drain-source voltage VDSS 550 V Gate-source voltage VGSS ±30 V 4.5 0.3 0.25 (Note 1) ID 16 Pulse (Note 1) IDP 64 Drain power dissipation (Tc = 25°C)
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Abstract: No abstract text available
Text: K16J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K16J55D Switching Regulator Applications 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 ＋0.3 －0.25 Characteristics Symbol Rating Unit Drain-source voltage
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TK16J55D
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TK16J55D
Abstract: No abstract text available
Text: K16J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K16J55D Switching Regulator Applications 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 ＋0.3 －0.25 Characteristics Symbol Rating Unit Drain-source voltage
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TK16J55D
TK16J55D
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SC-65
Abstract: No abstract text available
Text: K16J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K16J55D Switching Regulator Applications 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 ＋0.3 －0.25 Symbol Rating Unit Drain-source voltage VDSS 550 V Gate-source voltage
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TK16J55D
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