SC-65
Abstract: k15j60t K15J60
Text: K15J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K15J60T Switching Regulator Applications Unit: mm 20.0±0.3 9.0 2.0 3.3max. 1.0 2.0 Low drain-source ON resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 9.5 S (typ.)
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TK15J60T
SC-65
k15j60t
K15J60
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k15j60u
Abstract: TK15J60U K15J60 SC-65 TC40160
Text: K15J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K15J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 ＋0.3 －0.25
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TK15J60U
k15j60u
TK15J60U
K15J60
SC-65
TC40160
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K15J60
Abstract: No abstract text available
Text: K15J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K15J60T Switching Regulator Applications Unit: mm 20.0±0.3 9.0 2.0 3.3max. 1.0 2.0 Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 9.5 S (typ.)
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TK15J60T
K15J60
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SC-65
Abstract: K15J60T
Text: K15J60T 東芝電界効果トランジスタ シリコンNチャネルMOS形 DTMOS K15J60T ○ スイッチングレギュレータ用 単位: mm : Vth = 3.0～5.0 V (VDS = 10 V､ID = 1 mA) 20.5±0.5 2.0±0.3 絶対最大定格 (Ta = 25℃) ＋0.3 1.0 －0.25
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TK15J60T
20070701-JA
SC-65
K15J60T
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tk15j60t
Abstract: No abstract text available
Text: K15J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K15J60T Switching Regulator Applications Unit: mm 20.0±0.3 9.0 2.0 3.3max. 1.0 2.0 Low drain-source ON resistance: RDS (ON) = 0.24Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 9.5 S (typ.)
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TK15J60T
tk15j60t
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k15j60u
Abstract: No abstract text available
Text: K15J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K15J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V 1.0 0.3 0.25 5.45 ± 0.2 5.45 ± 0.2 4.8 MAX. Unit
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TK15J60U
k15j60u
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k15j60u
Abstract: TK15J60U K15J60
Text: K15J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K15J60U Switching Regulator Applications Unit: mm VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V (Note 1) ID 15 Pulse (t = 1 ms) (Note 1) IDP 30 A 1 Drain power dissipation (Tc = 25°C)
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TK15J60U
k15j60u
TK15J60U
K15J60
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K15J60
Abstract: No abstract text available
Text: K15J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K15J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 ＋0.3 －0.25
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TK15J60U
K15J60
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k15j60u
Abstract: TK15J60U K15J60 SC-65
Text: K15J60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K15J60U ○ スイッチングレギュレータ用 単位: mm : Vth = 3.0～5.0 V (VDS = 10 VID = 1 mA) 2.0 ± 0.3 1.0 ＋0.3 －0.25 単位 ド レ イ ン ・ ソ ー ス 間 電 圧
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TK15J60U
k15j60u
TK15J60U
K15J60
SC-65
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