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    K1381 Price and Stock

    Fischer Elektronik GmbH & Co KG SK-138-1000-AL

    Extruded Heatsink for PCB mounti
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    DigiKey SK-138-1000-AL Bulk 1
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    Fischer Elektronik GmbH & Co KG SK-138-1000-ME

    Extruded Heatsink for PCB mounti
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    DigiKey SK-138-1000-ME Bulk 1
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    Fischer Elektronik GmbH & Co KG SK-138-1000-SA

    Extruded Heatsink for PCB mounti
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    DigiKey SK-138-1000-SA Bulk 1
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    Sensata Circuit Breakers LELK1-38159-1-V

    CIR BRKR,HYDMAG
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    DigiKey LELK1-38159-1-V Bulk 3
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    RS LELK1-38159-1-V Bulk 7 Weeks 3
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    Sager LELK1-38159-1-V 1
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    Sensata Circuit Breakers IELK1-38136-25-V

    CIR BRKR,HYDMAG
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    DigiKey IELK1-38136-25-V Bulk 3
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    Master Electronics IELK1-38136-25-V
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    Sager IELK1-38136-25-V 1
    • 1 $65.56
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    Find more K1381 price and stock on Findchips.com

    K1381 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K1381 Toshiba Field Effect Transistor Silicon N Channel MOS Type (L2-pai-MOSIII) Relay Drive, Motor Drive and DC-DC Converter Original PDF

    K1381 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: K1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSIII K1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 25 mΩ (typ.) z High forward transfer admittance


    Original     		2SK1381 PDF

    Untitled

    Abstract: No abstract text available
    Text: K1381 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII K1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance


    Original     		2SK1381 PDF

    K1381

    Abstract: 2SK1381
    Text: K1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSIII K1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance


    Original     		2SK1381 K1381 2SK1381 PDF

    2SK1381

    Abstract: K1381
    Text: K1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSIII K1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance


    Original     		2SK1381 2SK1381 K1381 PDF

    K1381

    Abstract: 2SK1381
    Text: K1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSIII K1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance


    Original     		2SK1381 15transportation K1381 2SK1381 PDF

    K1381

    Abstract: 2SK1381
    Text: K1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSIII K1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) l High forward transfer admittance


    Original     		2SK1381 K1381 2SK1381 PDF