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    Toshiba America Electronic Components TK12J60U(F)

    MOSFET N-CH 600V 12A TO3P
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    Toshiba America Electronic Components TK12J60UF

    Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA TK12J60UF 100
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    K12J60U Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: K12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K12J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V 1.0 0.3 0.25 5.45 ± 0.2 5.45 ± 0.2 4.8 MAX. Unit


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    PDF TK12J60U

    K12J60U

    Abstract: No abstract text available
    Text: K12J60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K12J60U ○ スイッチングレギュレータ用 単位: mm z : Vth = 3.0~5.0 V (VDS = 10 VID = 1 mA) 1.0 2.0 ± 0.3 1.0 +0.3 -0.25 単位 ド レ イ ン ・ ソ ー ス 間 電 圧


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    PDF TK12J60U K12J60U

    Untitled

    Abstract: No abstract text available
    Text: K12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K12J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 +0.3 -0.25


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    PDF TK12J60U

    K12J60U

    Abstract: TK12J60U k12j60 transistor tc 144 SC-65 K12J
    Text: K12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12J60U Switching Regulator Applications Unit: mm VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V (Note 1) ID 12 Pulse (t = 1 ms) (Note 1) IDP 24 A 1 Drain power dissipation (Tc = 25°C)


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    PDF TK12J60U K12J60U TK12J60U k12j60 transistor tc 144 SC-65 K12J

    k12j60

    Abstract: K12J60U ELEVATOR K12J S7514 K12J6
    Text: K12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K12J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 +0.3 -0.25


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    PDF TK12J60U k12j60 K12J60U ELEVATOR K12J S7514 K12J6