K11A60D
Abstract: TK11A60D K11A60
Text: K11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)
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TK11A60D
K11A60D
TK11A60D
K11A60
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K11A60D
Abstract: K11A60
Text: K11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K11A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)
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TK11A60D
K11A60D
K11A60
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K11A60D
Abstract: K11A60 TK11A60D 11APF
Text: K11A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K11A60D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.54 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)
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TK11A60D
SC-67
2-10U1B
K11A60D
K11A60
TK11A60D
11APF
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K11A60D
Abstract: TK11A60D K11A60
Text: K11A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K11A60D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.54 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)
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TK11A60D
SC-67
2-10U1B
20070701-JA
K11A60D
TK11A60D
K11A60
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K11A60D
Abstract: No abstract text available
Text: K11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K11A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)
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TK11A60D
K11A60D
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K11A60D
Abstract: K11A60 TK11A60D TC200
Text: K11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K11A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)
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TK11A60D
K11A60D
K11A60
TK11A60D
TC200
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