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    K11A55D Price and Stock

    Toshiba America Electronic Components TK11A55D(STA4,Q,M)

    MOSFET N-CH 550V 11A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK11A55D(STA4,Q,M) Tube 1
    • 1 $3.23
    • 10 $2.101
    • 100 $1.4607
    • 1000 $1.09787
    • 10000 $1.045
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    Mouser Electronics TK11A55D(STA4,Q,M)
    • 1 $2.42
    • 10 $1.84
    • 100 $1.52
    • 1000 $1.08
    • 10000 $1.04
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    Toshiba America Electronic Components TK11A55D(STA4

    Trans MOSFET N-CH 550V 11A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK11A55D(STA4,Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK11A55D(STA4 Tube 32 Weeks 50
    • 1 -
    • 10 -
    • 100 $1.24564
    • 1000 $1.09516
    • 10000 $1.07008
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    K11A55D Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: K11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.52 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK11A55D

    K11A55D

    Abstract: TK11A55D
    Text: K11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.52 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK11A55D K11A55D TK11A55D

    K11A55D

    Abstract: TK11A55D
    Text: K11A55D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K11A55D ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.52 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original     		PDF TK11A55D SC-67 2-10U1B 20070701-JA K11A55D TK11A55D

    K11A55D

    Abstract: No abstract text available
    Text: K11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.52 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK11A55D K11A55D

    Untitled

    Abstract: No abstract text available
    Text: K11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K11A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.52 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK11A55D

    K11A55D

    Abstract: TK11A55D k11a55d datasheet
    Text: K11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.52 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK11A55D K11A55D TK11A55D k11a55d datasheet