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    K11A50 Price and Stock

    Toshiba America Electronic Components TK11A50D(STA4,Q,M)

    MOSFET N-CH 500V 11A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK11A50D(STA4,Q,M) Tube 1
    • 1 $2.82
    • 10 $1.829
    • 100 $1.2613
    • 1000 $0.9399
    • 10000 $0.87125
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    Mouser Electronics TK11A50D(STA4,Q,M)
    • 1 $2.02
    • 10 $1.62
    • 100 $1.33
    • 1000 $0.908
    • 10000 $0.874
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    Toshiba America Electronic Components TK11A50D(STA4

    Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK11A50D(STA4,Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK11A50D(STA4 Tube 32 Weeks 50
    • 1 -
    • 10 -
    • 100 $1.03853
    • 1000 $0.91307
    • 10000 $0.89216
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    K11A50 Datasheets Context Search

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    K11A50D

    Abstract: TK11A50D K11A50
    Text: K11A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		PDF TK11A50D K11A50D TK11A50D K11A50

    K11A50D

    Abstract: K11a50 TK11A50D 11APF K11A
    Text: K11A50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K11A50D スイッチングレギュレータ用 単位: mm A 3.9 3.0 : |Yfs| = 5.5 S (標準) 順方向伝達アドミタンスが高い。 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2


    Original     		PDF TK11A50D K11A50D K11a50 TK11A50D 11APF K11A

    K11A50D

    Abstract: K11A50 K*A50D TK11A50D 11APF
    Text: K11A50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K11A50D スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.45 Ω (標準) : |Yfs| = 5.5 S (標準) 順方向伝達アドミタンスが高い。 2.7 ± 0.2


    Original     		PDF TK11A50D K11A50D K11A50 K*A50D TK11A50D 11APF

    Untitled

    Abstract: No abstract text available
    Text: K11A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K11A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		PDF TK11A50D

    K11A50D

    Abstract: K11a50 TK11A50D K*A50D
    Text: K11A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		PDF TK11A50D K11A50D K11a50 TK11A50D K*A50D

    K*A50D

    Abstract: No abstract text available
    Text: K11A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		PDF TK11A50D K*A50D