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    K10N60 IGBT Search Results

    K10N60 IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    K10N60 IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k10n60

    Abstract: SKW10N60A PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SKP10N60A 1000NC
    Text: SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKP10N60A SKW10N60A PG-TO-220-3-1 PG-TO-247-3 k10n60 SKW10N60A PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SKP10N60A 1000NC

    k10n60

    Abstract: No abstract text available
    Text: SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKP10N60A SKW10N60A PG-TO-220-3-1 SKW10N60A k10n60

    Untitled

    Abstract: No abstract text available
    Text: SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for:


    Original     		PDF SKP10N60A SKW10N60A PG-TO-220-3-1

    k10n60

    Abstract: k10n60 igbt SKP10N60A
    Text: SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKP10N60A SKW10N60A PG-TO-220-3-1 O-220AB) SKP10N60 SKW10N60 k10n60 k10n60 igbt

    k10n60

    Abstract: SKP10N60 K10N60 K10N
    Text: SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKP10N60A SKW10N60A PG-TO-220-3-1 O-220AB) SKP10N60 SKW10N60 k10n60 SKP10N60 K10N60 K10N

    k10n60

    Abstract: fast recovery diode 1000v 10A SKP10N60 K10N60
    Text: SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKP10N60A SKW10N60A PG-TO-220-3-1 O-220AB) SKP10N60 SKW10N60 k10n60 fast recovery diode 1000v 10A SKP10N60 K10N60

    k10n60

    Abstract: SKB10N60A
    Text: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKB10N60A SKB10N60A k10n60

    K10N60

    Abstract: SKB10N60A ND marking
    Text: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKB10N60A P-TO-220-3-45 K10N60 SKB10N60A ND marking

    k10n60

    Abstract: No abstract text available
    Text: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKB10N60A SKB10N60A k10n60

    k10n60

    Abstract: PG-TO-263-3-2 SKB10N60A diode smd marking 5P
    Text: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,


    Original     		PDF SKB10N60A k10n60 PG-TO-263-3-2 SKB10N60A diode smd marking 5P

    Untitled

    Abstract: No abstract text available
    Text: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for frequency inverters for washing machines,


    Original     		PDF SKB10N60A