Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K X 1 DRAM Search Results

    K X 1 DRAM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    UPD48011318FF-FH16-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation
    UPD48011436FF-FH12-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation
    UPD48011336FF-FH16-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation
    UPD48011418FF-FH12-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation
    UPD48288218AFF-E24-DW1 Renesas Electronics Corporation Low Latency DRAM, T-TFBGA, /Tray Visit Renesas Electronics Corporation
    UPD48288118AFF-E24-DW1-A Renesas Electronics Corporation Low Latency DRAM, T-TFBGA, /Tray Visit Renesas Electronics Corporation

    K X 1 DRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS VIDEO RAM KM428C128 12 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung K M 4 2 8 C 1 2 8 is a CMOS 1 2 8 K X 8 bit Dual Port DRAM. It consists ot a 1 2 8 K X 8 dynamic random


    OCR Scan     		PDF KM428C128 40-PIN 40/44-PIN

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS VIDEO RAM KM428C128 1 2 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 1 28K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung KM 428C128 is a CMOS 128 K X 8 bit Dual Port DRAM. It consists of a 1 2 8 K X 8 dynamic random


    OCR Scan     		PDF KM428C128 428C128 100ns 125ns 150ns 180ns 40-PIN

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56HW164DB Series, HB56HW165DB Series HB56HW164DB 8 MB EDO DRAM S.O.DIMM 1-Mword X 64-bit, 4 k Refresh, 1-Bank Module 4 pcs of 1 M X 16 Components HB56HW165DB 8 MB EDO DRAM S.O.DIMM 1-Mword X 64-bit, 1 k Refresh, 1-Bank Module (4 pcs of 1 M X 16 Components)


    OCR Scan     		PDF HB56HW164DB HB56HW165DB 64-bit, ADE-203-699C 16-Mbit HM51W16165) Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: HB56H232 Series, HB56H132 Series HB56H232B/SB 8 MB EDO DRAM SIMM 2-Mword X 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 Components HB56H132B/SB 4 MB EDO DRAM SIMM 1-Mword X 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M X 16 Components) HITACHI


    OCR Scan     		PDF HB56H232 HB56H132 HB56H232B/SB 32-bit, HB56H132B/SB ADE-203-700C 16-Mbit HM5118165)

    Untitled

    Abstract: No abstract text available
    Text: KMM536512B DRAM MODULES 5 1 2 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 3 6 5 1 2 B is a 5 1 2K bit X 3 6 Dynamic RAM high density memory module. The Sam­ sung K M M 5 3 6 5 1 2 B consist of sixteen CMOS 2 5 6 K X 4


    OCR Scan     		PDF KMM536512B 20-pin 18-pin 72-pin 130ns

    Untitled

    Abstract: No abstract text available
    Text: HB56H232 Series, HB56H132 Series HB56H232B/SB 8 MB EDO DRAM SIMM 2-Mword X 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 Components HB56H132B/SB 4 MB EDO DRAM SIMM 1-Mword X 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M X 16 Components) HITACHI


    OCR Scan     		PDF HB56H232 HB56H132 HB56H232B/SB 32-bit, HB56H132B/SB ADE-203-700C 16-Mbit HM5118165)

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56G236 Series, HB56G136 Series HB56G236B/SB 8 MB FP DRAM SIMM 2-Mword X 36-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 and 4 pcs of 1 M x 2 Components HB56G136B/SB 4 MB FP DRAM SIMM 1-Mword x 36-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M x 16 and 2 pcs of 1 M x 2 Components)


    OCR Scan     		PDF HB56G236 HB56G136 HB56G236B/SB 36-bit, HB56G136B/SB ADE-203-702C 16-Mbit HM5118160) Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: HB56G232 Series, HB56G132 Series HB56G232B/SB 8 MB FP DRAM SIMM 2-Mword X 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 Components HB56G132B/SB 4 MB FP DRAM SIMM 1-Mword X 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M X 16 Components) HITACHI ADE-203-701C (Z)


    OCR Scan     		PDF HB56G232 HB56G132 HB56G232B/SB 32-bit, HB56G132B/SB ADE-203-701C 16-Mbit HM5118160)

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56G232 Series, HB56G132 Series HB56G232B/SB 8 MB FP DRAM SIMM 2-Mword X 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 Components HB56G132B/SB 4 MB FP DRAM SIMM 1-Mword X 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M X 16 Components) HITACHI ADE-203-701C (Z)


    OCR Scan     		PDF HB56G232 HB56G132 HB56G232B/SB 32-bit, HB56G132B/SB ADE-203-701C 16-Mbit HM5118160) Nippon capacitors

    RSN 315 H 42

    Abstract: RSN 314 H 41 data sheet ic 4558 4558 dd rca 645 RS 4558 64kx1 dram amd 8150 design specification dram 64kx1 Am8157
    Text: Am8150 Display Refresh Controller > 3 DISTINCTIVE CHARACTERISTICS A ddress co ntro lle r in bit-m apped graphics system s Perform s video refresh, m em ory arbitration, dynam ic RAM control, and dynam ic RAM refresh functions 18-bit address supports 1 6 K x 1 , 1 6 K x 4 , 6 4 K x 1 , and


    OCR Scan     		PDF 18-bit 16Kx1, 16Kx4, 64Kx1, Am8150 AIS-B-20M-5/87-0 04478C RSN 315 H 42 RSN 314 H 41 data sheet ic 4558 4558 dd rca 645 RS 4558 64kx1 dram amd 8150 design specification dram 64kx1 Am8157

    Untitled

    Abstract: No abstract text available
    Text: HB56E836/HB56E436 Series HB56E836 32 MB Unbuffered EDO DRAM SIMM 8-Mword X 36-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 and 8 pcs of 4 M x 1 Components HB56E436 16 MB Unbuffered EDO DRAM SIMM 4-Mword x 36-bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M x 4 and 4 pcs of 4 M x 1 Components)


    OCR Scan     		PDF HB56E836/HB56E436 HB56E836 36-bit, HB56E436 ADE-203-673A HB56E836 16-Mbit HM5117405) HM514105)

    Untitled

    Abstract: No abstract text available
    Text: HB56UW472EJN Series, HB56UW464EJN Series HB56UW472EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 72-bit, 4 k Refresh, 1-Bank Module 18 pcs of 4 M X 4 Components HB56UW464EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 64-bit, 4 k Refresh, 1-Bank Module (16 pcs of 4 M X 4 Components)


    OCR Scan     		PDF HB56UW472EJN HB56UW464EJN 72-bit, 64-bit, ADE-203-718C HB56UW472EJN,

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56UW272EJN Series, HB56UW264EJN Series HB56UW272EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 72-bit, 2 k Refresh, 1-Bank Module 9 pcs of 2 M X 8 Components HB56UW264EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 64-bit, 2 k Refresh, 1-Bank Module (8 pcs of 2 M X 8 Components)


    OCR Scan     		PDF HB56UW272EJN HB56UW264EJN 72-bit, 64-bit, ADE-203-717C HB56UW272EJN, Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: HB56UW272EJN Series, HB56UW264EJN Series HB56UW272EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 72-bit, 2 k Refresh, 1-Bank Module 9 pcs of 2 M X 8 Components HB56UW264EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 64-bit, 2 k Refresh, 1-Bank Module (8 pcs of 2 M X 8 Components)


    OCR Scan     		PDF HB56UW272EJN HB56UW264EJN HB56UW272EJN 72-bit, HB56UW264EJN 64-bit, ADE-203-717C HB56UW272EJN,

    m5324

    Abstract: KMM5324004CK KMM5324004CKG
    Text: KM M 5324004C K/C KG K M M 5324104C K /C K G DRAM M O D ULE K M M 5324004C K/CK G & KM M 5324104CK/CKG Fast Page M ode with EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES T h e S a m s u n g K M M 53240 1 0 4 C K is a 4 M x 3 2 b its


    OCR Scan     		PDF M5324004C KMM5324104CK/CKG KMM5324004CK/CKG KMM5324104CK/CKG KMM53240 4Mx32bits 24-pin 72-pin m5324 KMM5324004CK KMM5324004CKG

    SBS IN CIRCUIT

    Abstract: Nippon capacitors
    Text: HB56A832BS/SBS, HB56A432BR/SBR Series HB56A832BS/SBS 32 MB Unbuffered FP DRAM SIMM 8-Mword X 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 Components HB56A432BR/SBR 16 MB Unbuffered FP DRAM SIMM 4-Mword X 32-bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M X 4 Components)


    OCR Scan     		PDF HB56A832BS/SBS, HB56A432BR/SBR HB56A832BS/SBS 32-bit, ADE-203-728B 16-Mbit SBS IN CIRCUIT Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: HB56U832 Series, HB56U432 Series HB56U832B/SB 32 MB EDO DRAM SIMM 8-Mword X 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 Components HB56U432B/SB 16 MB EDO DRAM SIMM 4-Mword X 32 bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M X 4 Components) HITACHI


    OCR Scan     		PDF HB56U832 HB56U432 HB56U832B/SB 32-bit, HB56U432B/SB ADE-203-736B 16-Mbit HM5117405)

    4264 dram

    Abstract: No abstract text available
    Text: AUSTI N S E M I C O N D U C T O R INC bOE D I D O E l l ? G G G G 1 1 4 7Ü4 H A U S T K K tL IM IN A K Y MT4C4264 883C K X 1 DRAM |U|IC=RON MILITARY DRAM K X 1 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883, Class B


    OCR Scan     		PDF MT4C4264 MIL-STD-883, 16-Pin 150mW 256-cycle 4264 dram

    Untitled

    Abstract: No abstract text available
    Text: KMM536100QA/AG/A1 /A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung K M M 5 3 6 1 0 0 0 A is a 1M b its X 3 6 Dynamic RAM high density m em ory module. The Samsung K M M 5 3 6 1 0 0 0 A con sist o f eight C M OS 1 M X 4 bit


    OCR Scan     		PDF KMM536100QA/AG/A1 20-pin 72-pin 361000A- M5361000A/A1: KMM5361000 111il 111111h

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KMM5401000A/AG 1 M X 4 0 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 5401000A is a 1M bits X 40 Dynamic RAM high density memory module. The Sam­ sung K M M 5401000A consist of ten CMOS 1M X 4


    OCR Scan     		PDF KMM5401000A/AG 401000A 20-pin 72-pin 401000A- 401000A-1 180ns KMM5401OOOA

    Untitled

    Abstract: No abstract text available
    Text: AS4LC256K16E0 A 3.3V 2 5 6 K X 16 CMOS DRAM EDO Features • 5 1 2 refresh cycles, 8 m s refresh interval - RAS-only or CAS-before-RAS refresh or self refresh • Organization: 262,144 w ords x 16 bits • H igh speed - 3 5 / 4 5 / 6 0 ns K K access tim e


    OCR Scan     		PDF AS4LC256K16E0 AS4LC256K16E0-35) 40-pin AS4LC256K16E0-35JC AS4LC256K16E0-45JC AS4LC256K16E0-60JC 40/44-pin AS4LC256K16E0-35TC

    Untitled

    Abstract: No abstract text available
    Text: HB56A832BS/SBS, HB56A432BR/SBR Series HB56A832BS/SBS 32 MB Unbuffered FP DRAM SIMM 8-Mword X 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 Components HB56A432BR/SBR 16 MB Unbuffered FP DRAM SIMM 4-Mword X 32-bit, 2 k Refresh, 1-Bank Module (8 pcs o f 4 M X 4 Components)


    OCR Scan     		PDF HB56A832BS/SBS, HB56A432BR/SBR HB56A832BS/SBS 32-bit, HB56A432BR/SBR ADE-203-728C HB56A832BS/SBS 16-Mbit HM5117400)

    PBSRAM

    Abstract: MC8031
    Text: M C80364K32, MC8031 28K32 6 4 K X 3 2 , 1 2 8 K X 3 2 PIPELINE BURST S R A M M o Sys 6 - - • High performance, low power pipeline burst SRAM


    OCR Scan     		PDF C80364K32, MC8031 28K32 83-133MHz 100-Pin PBSRAM

    5116405

    Abstract: Nippon capacitors
    Text: H B 5 6 E 8 3 6 / H B 5 6 E 4 3 6 S e r i e s HB56E836 32 MB Unbuffered EDO DRAM SIMM 8-Mword X 36-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 and 8 pcs of 4 M x 1 Components HB56E436 16 MB Unbuffered EDO DRAM SIMM 4-Mword x 36-bit, 2 k Refresh, 1-Bank Module


    OCR Scan     		PDF HB56E836 36-bit, HB56E436 ADE-203-673A 16-Mbit HM5117405) HM514105) 5116405 Nippon capacitors