DDC2354-000
Abstract: DDC2354-250 CDC7630-000 CDC7631-000 DDC2353-000 DDC2353-250
Text: DATA SHEET Zero Bias Silicon Schottky Barrier Detector Diodes Features ● ● High sensitivity Low video impedance Description Skyworks series of packaged, beam-lead and chip zero bias Schottky barrier detector diodes are designed for applications through K band. The choice of barrier metal and process
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Surface Mount RF Schottky Barrier Diodes
Abstract: No abstract text available
Text: Silicon Schottky Diodes High performance and high reliability RF and microwave Schottky diodes for your demanding mixer and detector applications New 0201 Surface Mount Silicon — for Mixer Detectors Through K Band .50 x .25 x .30 mm. VB @ 10 µA V CT @ 0.15 V
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SMS7630-093
SMS7621-096
DMF2820
DME2127
DMJ2823
DMF2821
DME2957
DMJ2777
DMF2344
DME2333
Surface Mount RF Schottky Barrier Diodes
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Microwave detector diodes 18 GHz
Abstract: hp11612a Microwave detector diodes Alpha SMS7630 pn junction diode ideality factor CR05-101J-T SMS7630-079 Microwave zero bias detector diodes CR05-101J microwave detector diode
Text: Application Note A Level Detector Design for Dual-Band GSM-PCS Handsets APN1014 Introduction Schottky Detector Fundamentals Schottky diode detectors are commonly used as amplitude demodulators and level detectors in wireless and other RF and microwave signal processors. Detector
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APN1014
SMS7630
SMS7630-079
8/00A
Microwave detector diodes 18 GHz
hp11612a
Microwave detector diodes
Alpha SMS7630
pn junction diode ideality factor
CR05-101J-T
Microwave zero bias detector diodes
CR05-101J
microwave detector diode
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MA40143
Abstract: No abstract text available
Text: Schottky Detector Diodes Schottky Detector Diodes Rev. V4 Features Case Styles • Wide Selection of Packages for Stripline, Coaxial, and Waveguide Detectors • Chip Diodes Available • N Type Diodes • Low 1/F Noise Description This family of low capacitance Schottky diodes is
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16GHz.
MA40143
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x band diode detector waveguide
Abstract: CME7660-000 DIODE RL 207 8E08 detector doppler ka CDB7619-000 CDC7630-000 RF 207 Silicon Detector Diodes Alpha Industries
Text: Silicon Schottky Barrier Detector Diodes Features 3 Both P–Type and N–Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam–Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes
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Untitled
Abstract: No abstract text available
Text: Schottky Detector Diodes Schottky Detector Diodes Rev. V3 Features • Wide Selection of Packages for Stripline, Coaxial, and Waveguide Detectors • Chip Diodes Available • Both P and N Type Diodes • Excellent Sensitivity Through Ka-Band • Low 1/F Noise
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Microwave detector diodes 18 GHz
Abstract: hp11612a 302J Microwave detector diodes metal detector circuit with pcb SMS7630-079 Metal Detector Microwave PIN diode spice APN1014 20 GHz schottky diode
Text: APPLICATION NOTE APN1014: A Level Detector Design for Dual-Band GSM-PCS Handsets Introduction Schottky Detector Fundamentals Schottky diode detectors are commonly used as amplitude demodulators and level detectors in wireless and other RF and microwave signal processors. Detector designs are simple to
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APN1014:
SMS7630
Microwave detector diodes 18 GHz
hp11612a
302J
Microwave detector diodes
metal detector circuit with pcb
SMS7630-079
Metal Detector
Microwave PIN diode spice
APN1014
20 GHz schottky diode
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Alpha Industries pin diodes
Abstract: No abstract text available
Text: Zero Bias Silicon Schottky Barrier Detector Diodes EEAlpha CDC, DDC Series Features • High Sensitivity ■ Low Video Impedance Description Alpha’s series of packaged, beam-lead and chip zero bias Schottky barrier detector diodes are designed for applications through K-band. The choice of barrier
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ND4151-3A
Abstract: ND4151-3D
Text: N E C / CALIFORNIA 1SE D • b427414 0001=145 S SEC K-BAND SILICON MIXER-DETECTOR SCHOTTKY DIODE ND4151-3A ND4151-3D OUTLINE DIMENSIONS FEATURES Units in mm • HIGH SENSITIVITY OUTLINE 3A • LOW DRIVE LEVEL • SMALL SIZE ' 4.0 MIN. - — • LOW COST
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b427414
ND4151-3A
ND4151-3D
ND4151-3A
ND4151-3D
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Untitled
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC •¡FdtUlIPWKiK electronic Cr*l««1*ehnoiegtW 17E D ■ DODÖSbM * «ALGiS S 203 P _ J C J f c k £ S Silicon Photo PIN Diode P-Type) Applications: Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's.
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BPW 89
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC 17E D • a^SQCHfci 00Q65E4 a ■ AL66 ^ RPW 89 _ , - m § F « K l& S electronic CrMlrviTschr>oiogt*s ( ^ i f / * S * 3 i Silicon Photo PIN Diode (N-Type j Applications: Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's.
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00Q65E4
5x101
BPW 89
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090Q
Abstract: LTC DWG 05-08-1661 "RF Power Amplifier" rf power detector circuit diagram rf power amplifier 850 MHZ RF Power detector LTC1757-1CMS8 LTC1757-2CMS MS10 150K resistor
Text: I F I R i l R i L I A i l Electrical Specifications Subject to Change u f m _LTC 1757-1/LTC 1757-2 TECHNOLOGY D iS C R IP TIO n K fìT U lK S Dual Band R F Power Am plifier Control LT C 175 7-2 Internal Schottky Diode Detector Wide Input Frequency Range: 850M Hz to 2 G H z
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LTC1757-2)
850MHz
LTC1757-1)
10-Pin
LTC1757-1/LT
LTC1757-1
LTC1261
LTC1550/LTC1551
900kHz
090Q
LTC DWG 05-08-1661
"RF Power Amplifier"
rf power detector circuit diagram
rf power amplifier 850 MHZ
RF Power detector
LTC1757-1CMS8
LTC1757-2CMS
MS10
150K resistor
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pulse metal detector
Abstract: x band diode detector waveguide diode detector x band Silicon Point Contact Mixer Diodes Schottky Barrier Diodes for detectors Silicon Detector Diodes Silicon Detector Silicon Point Contact Diode
Text: Silicon Schottky Barrier Detector Diodes Features • ■ ■ Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction Description Applications Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications
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Silicon Point Contact Mixer Diodes
Abstract: ka-band mixer Silicon Detector Diodes Silicon Point Contact Diode
Text: ALPHA IN»/ SEMICONDUCTOR 4ÛE D • 05Û54M3 D0011S0 ÔTÏ ■ ALP Silicon Schottky Barrier Detector Diodes To-jol Features Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction Description Applications Alpha packaged, beam-lead and chip Schottky
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D0011S0
Silicon Point Contact Mixer Diodes
ka-band mixer
Silicon Detector Diodes
Silicon Point Contact Diode
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180 Degree hybrid ku band
Abstract: No abstract text available
Text: Universal Chip Mixer and 0 3 Alpha Detector Schottky Barrier Diodes t,.- , „• CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
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CDX76XX,
CME7660
CDB7619
CDB7620
CDC7622
180 Degree hybrid ku band
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Untitled
Abstract: No abstract text available
Text: AjfaEM M art A M P co m p a n y Schottky Detector Diodes V 2.00 Features Case Styles • Wide Selection of Packages for Stripline, Coaxial and Waveguide Detectors • Chip Diodes Available • Both P and N Type Diodes • Excellent Sensitivity Through Ka-Band
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MA40264-186
Abstract: MA40207-120 MA40270-135A MA40207 MA40272 MA40108 JD2078 MA40264 MA40272 135A MA40053
Text: Æ an A M P company Schottky Detector Diodes V 2.00 Features Case Styles See appendix for complete dimen • Wide Selection of Packages for Stripline, Coaxial and Waveguide Detectors • Chip Diodes Available • Both P and N Type Diodes • Excellent Sensitivity Through Ka-Band
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100Kfl
MA40264-186
MA40207-120
MA40270-135A
MA40207
MA40272
MA40108
JD2078
MA40264
MA40272 135A
MA40053
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Untitled
Abstract: No abstract text available
Text: A#f a an AMP company Zero Bias Detector Diodes V3.00 Case Styles Features • Can B e Used Without External DC Bias • Exhibit Uniform Rv Characteristics See appendix for complete dimensions • High Voltage Sensitivity • Available in Packages, Chips and Beam Leads
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Untitled
Abstract: No abstract text available
Text: Universal Chip Mixer and EHA lp h a Detector Schottky Barrier Diodes CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
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CDX76XX,
CME7660
comm69
1E-05
CDC7622
3E-06
1E-11
CDB7619
3E-09
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alpha detector
Abstract: CDC7622 on/gold detectors circuit
Text: Universal Chip Mixer and Detector Schottky Barrier Diodes EBA lpha CDX76XX, CME7660 Features • For Microwave M IC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 W ire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
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CDX76XX,
CME7660
CDB7619
3E-09
1E-11
1E-05
1E-05
CDC7622
CDB7619
alpha detector
CDC7622
on/gold detectors circuit
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Untitled
Abstract: No abstract text available
Text: GEC PLES S EY S F >1 I C O N 1 U C I O K S DC1841/45 PLANAR DOPED BARRIER MICROSTRIP LID/MICROLID DETECTOR DIODE Planar Doped Barrier PDB) diodes represent a major advancement in detector technology. These diodes otter very high tangential sensitivity, high compression point and very
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DC1841/45
retr11
DC1841
DC1845
35GHz)
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LN358
Abstract: x band diode detector waveguide 1N830A P009 1N358A KA band diode detector waveguide video Log Amplifier detector 18 GHz DDA5093 "Point Contact Diodes" 1n833
Text: Silicon Point Contact Detector Diodes 'T en cry Features • Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz . These diodes employ epitaxial silicon optimized for high tan
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backward diode
Abstract: tunnel diode General Electric "backward diode"
Text: P j p i GE C P L E S S E Y CT3508-1.2 MIXER & DETECTOR DIODES - INTRODUCTION M ETAL S E M IC O N D U C TO R SC H O TTK Y BA RRIER DIO DES INTRODUCTION A mixer is a sensitive receiver circuit which makes use of the nonlinear properties of a mixer diode to produce a
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CT3508-1
backward diode
tunnel diode General Electric
"backward diode"
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MA40266
Abstract: MA40204 MA400 MA40052 ma402
Text: Silicon Schottky Detector Diodes Features • WIDE SELECTION OF PACKAGES FOR STRIPLINE, COAXIAL AND WAVEGUIDE DETECTORS ■ CHIP DIODES AVAILABLE ■ BOTH P AND N TYPE DIODES ■ EXCELLENT SENSITIVITY THROUGH Ka-BAND ■ LOW 1/f NOISE Description Applications
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MA40250
MA40266
MA40204
MA400
MA40052
ma402
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