9904 120
Abstract: 9904 120 motor carbon brush motor carbon Brushes dc motor dc motor 60 rpm power rpm sheet of motor 9904 K3030
Text: PRODUCT SPECIFICATION FOR DC MOTOR MODEL: TYPE: 1. Type indication 1.1 1.2 1.3 1.4 2. Spark suppression Direction of rotation Rotor Nominal data: Varistor Reversible Ironcore See sheet 4&5 Electrical data of motor 2.1 2.2 2.3 2.4 2.5 2.6 3. 4 Watt 9904 120 52401-9904 120 52711
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Untitled
Abstract: No abstract text available
Text: . TPS 524 / 534 |k Xvv:": • High Signal Voltage • Low Temperature Coefficient of Responsivity BISS ;•; .■ ; ! 11111 • Low Time Constant The sensor TPS 524 consists of a series of thermoelements forming a sensitive area ■B H I ■ Typical Reid of View
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TPS534
TPS53.
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ic 7455
Abstract: t523 an 6185 SM 6185
Text: ID l.tìS U L9 4 V -0 2„ X - v + t i S K jSSB O. I u mM I N. : # W X '> + T±feX-v+ 1.0 u m M I N . LO umM I N. — : 3. n o v y 'J o m A ^ 4 .i t n a w p : t =l.6±0.05 A '¿ mm m 6. : 52326-* I, 52368-*»* I 52409-* I, 524 10-* I 524 11-* I „
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S52340
0251SA52340
ic 7455
t523
an 6185
SM 6185
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4800L
Abstract: IC-3052B 1PD42S4800L-A70 424800L uPD424800-L
Text: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ / juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability
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uPD42S4800L
uPD424800L
PD42S4800L,
424800L
PD42S4800L
28-pin
/1PD42S4800L-A70,
424800L-A70
/1PD42S4800L-A80,
4800L
IC-3052B
1PD42S4800L-A70
uPD424800-L
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Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT ¿¿PD42S4800, 424800 4M -BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The iiPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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PD42S4800,
iiPD42S4800,
PD42S4800
28-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The ¿iPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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PD42S4800,
iPD42S4800,
PD42S4800
28-pin
PD42S4800-70,
VP15-207-2
L42752S
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424800-70
Abstract: nec 424800 JPD42S4800 PD424800LE-70 424800L 424800g5
Text: NEC MOS INTEGRATED CIRCUIT juPD42S4800, 424800 4M -BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /zPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S4800
uPD424800
/zPD42S4800,
/jPD42S4800
28-pin
/iPD42S4800-70,
VP15-207-2
424800-70
nec 424800
JPD42S4800
PD424800LE-70
424800L
424800g5
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424800-70
Abstract: 42s4800 2716D nec 42s4800 UPD 552 C 424800-80 NEC D 553 C 574 nec uPD424800 nec 2716d
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / ¿¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The J2PD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S4800
uPD424800
J2PD42S4800,
mPD42S4800
28-pin
/iPD42S4800-70,
/iPD42S480Q-8Q,
VP15-207-2
424800-70
42s4800
2716D
nec 42s4800
UPD 552 C
424800-80
NEC D 553 C
574 nec
nec 2716d
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UPD42S4800-70
Abstract: No abstract text available
Text: NEC b l4S7S2S O Om iD*! m • NECEj A T A SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The /IPD42S4800, 424800 are 524 288 words by 8 bits dynam ic CMOS RAMs. The fast page mode capability
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PD42S4800,
/IPD42S4800,
/iPD42S4800
28-pin
b42755s
UPD42S4800,
jiPD42S4800,
PD42S4800G5,
UPD42S4800-70
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4800L
Abstract: IC-3052B uPD424800 UPD42S480
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S4800L
uPD424800L
PD42S4800L,
424800L
PD42S4800L
28-pin
//PD42S4800L-A70,
424800L-A70
/JPD42S4800L-A80,
4800L
IC-3052B
uPD424800
UPD42S480
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Untitled
Abstract: No abstract text available
Text: NEC DATA SHEET MOS INTEGRATED CIRCUIT juPD42S4805A, 424805A 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, HYPER PAGE MODE Description The ftPD42S4805A, 424805A are 524 288 words by 8 bits dynamic CMOS RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.
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juPD42S4805A
24805A
ftPD42S4805A,
24805A
28-pin
JPD42S4805A-50,
24805A-50
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D • 7^4142 DD131S7 524 B S H 6 K KM41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 41C4000AL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.
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DD131S7
KM41C4000AL
41C4000AL
41C4000AL-
130ns
150ns
100ns
180ns
200ns
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UPD42S4805A
Abstract: nec d 588
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / juPD42S4805A, 424805A 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, HYPER PAGE MODE D escription The /JPD42S4805A, 424805A are 524 288 w ords by 8 bits dynam ic CMOS RAMs w ith optional hyper page mode. Hyper page mode is a kind o f page mode and is useful for the read operation.
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uPD42S4805A
uPD424805A
/JPD42S4805A,
24805A
tPD42S4805A,
28-pin
iPD42S4805A-50,
24805A-50
nec d 588
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doc-70
Abstract: c431a
Text: O K I Semiconductor MSM27C431AZB 524,288-Word x 8-Bit Low-Voltage One Time PROM D E S C R IP T IO N The MSM27C431AZB is a 4 Mb electrically Programmable Read-Only Memory organized as 524 288 t h e S M 27C43 1 A ^ SM27C^31AZB °P erates on a single 3.3 V power supply and is TTL compatible. Since
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MSM27C431AZB
288-Word
MSM27C431AZB
7Cf31
MSM27-
C431AZB
32-pin
MSM27C421ZB)
doc-70
c431a
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KM48V514B
Abstract: No abstract text available
Text: CMOS DRAM KM4ÔV514B/BL/BLL 5 1 2 K x 8 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: T h e S a m s u n g K M 4 8 V 5 1 4 B /B I7 B L L is a C M O S h ig h sp e e d 524 ,28 8 x 8 D ynam ic R an d o m A c c e s s M em ory.
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V514B/BL/BLL
110ns
130ns
150ns
28-LEAD
KM48V514B
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Untitled
Abstract: No abstract text available
Text: •H Y U N D A I HY62VB4DD Series 5 1 Z K N B - b il C M O S 5R A M PREUMINAHY DESCRIPTION TVib HYSZV8400 is a high-speBd, law power and 524,ZBfl x B-bits CMOS static RAM fabricated using Hyundai's high perform ance twin tub CMOS pro c b s s technology. The HY52VB400 has a data retention m ode that guarantees
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HY62VB4DD
HYSZV8400
HY52VB400
HY62VB400
J/12U/150/200ns
040fl4)
Z54fl|
DSD41
D7B51
1DED3-11-MAYM
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d4516161
Abstract: MPD4516421
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description T he /¿PD4516421, 451 6821, 4516161 are high-speed 16,777,216 -bit s y nchrono us dyna m ic random -access m em o ries, org a n ize d a s 2,097,152 x 4 x 2, 1,048,576 x 8 * 2 and 524 ,288 x 16 x 2 w ord x bit * ban k}, respectively.
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uPD4516421
uPD4516821
uPD4516161
16M-bit
PD4516421,
44-pin
50-pin
VP15-107-2
IR35-107-2
d4516161
MPD4516421
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b32534
Abstract: No abstract text available
Text: B 32 524 MKT -1 I- - O rd e rin g c o d e s a n d p a c k in g u n its , le a d s p a c in g 2 7,5 m m Cr M a x im u m O rd e rin g c o d e 1 d im e n s io n s hy. f i x / m m ) ( Km , . f < 60 Hz) P a c k in g u n its (pcs) Ammo Reel
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Untitled
Abstract: No abstract text available
Text: tiM27SSS □ □ 4 1 b cl2 2TÛ ATA SHEET NEC MOS INTEGRATED CIRCUIT //PD42S4800L, 424800L 3.3 V OPERATION 4 M BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The ^PD42S4800L, 424800L are 524 288 w o rd s b y 8 b its d yn a m ic CMOS RAM s. The fa st page m ode ca p a b ility
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tiM27SSS
//PD42S4800L,
424800L
PD42S4800L,
424800L
/PD42S4800L
28-pin
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSC2330A-XXYS4/KS4_ 524 ,28 8 Word BY 8 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION T h e O ki M S C 2 3 3 0 A -x x Y S 4 /K S 4 is a fully decoded, 5 2 4 ,2 8 8 word x 8 bit C M O S dynam ic random access m emory com posed of four 1Mb D R A M s in SOJ M SM 514256A JS . T h e m ounting of four SOJs
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MSC2330A-XXYS4/KS4_
14256A
30pin
MSC2330A-xxYS4/KS4
//n///T7777X
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MSM538022C
Abstract: No abstract text available
Text: O K I Semiconductor MSM538022C 524,288-W ord x 16-B it o r 1,048,576-W ord x 8 -Bit M ask ROM DESCRIPTION The OKI MSM538022C is a high-speed CMOS M ask ROM th at can electrically sw itch betw een 524 288w o rd x 16-bit a n d 1,048 576-w ord x 8-bit configurations. The MSM538022C o perates o n T s in i 5 0 V
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MSM538022C
288-Word
16-Bit
576-Word
MSM538022C
L72MP40
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Untitled
Abstract: No abstract text available
Text: I • b 4 2 7 5 5 5 D O M l ^ 5 7 b M N E C E À T A NEC S H E E T MOS INTEGRATED CIRCUIT /¿PD42S4900, 424900 4 M BIT DYNAMIC RAM 512 K-WORD BY 9-BIT, FAST PAGE MODE DESCRIPTION ★ The /iPD42S4900, 424900 are 524 288 w ords by 9 bits dynam ic CMOS RAMs. The fast page m ode cap ab ility
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PD42S4900,
/iPD42S4900,
PD42S4900
28-pin
bMg75a5
PD42S4900G5,
424900G5
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MSM27C421AZB
Abstract: No abstract text available
Text: O K I Semiconductor MSM27C421AZB 524,288-Word x 8-Bit One Time PROM D E S C R IP T IO N The MSM27C421AZB is a 4 M b electrically P rogram m ab le R ead-O nly M em ory o rg an ized as 524 288 ^ rM S M 2 7 C 4 2 1 AZBSM27Cf421 AZB ° p8rateS ° n 3 sinSle 5 V Pow er su PPlv an d is TTL com patible. Since
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MSM27C421AZB
288-Word
MSM27C421AZB
MSM27C
SM27T1AZB
MSM27-
C421AZB
32-pin
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TRANSISTOR C 557 B
Abstract: TRANSISTOR N3
Text: Non-Pulse M odulated Features • E a s y o p e ra tio n m o n ito r in g w ith red L E D in d ic a to r ■ R e s p o n s e fre q u e n c y as h ig h a s 1 K H z ■ W id e o p e ra tin g v o lta g e , 5 -2 4 V D C ■ A m p lifie r o u tp u t ca n be c o n n e c te d d ire c tly to P L C , T T L a n d re lays
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EE-SY671
EE-SY672
TRANSISTOR C 557 B
TRANSISTOR N3
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