K 3569 7.G EQUIVALENT Search Results

K 3569 7.G EQUIVALENT Result Highlights (5)

Part	Manufacturer	Description
TMP89FS60AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E
TMP89FS63AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65
TMP89FS60BFG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002
TMP89FS63BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002
TMP89FS62AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A

K 3569 7.G EQUIVALENT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mrf182 Abstract: MRF182R1 MRF182SR1 945 mosfet NI-360 Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182R1 MRF182SR1 N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device	Original	MRF182/D MRF182R1 MRF182SR1 MRF182R1 mrf182 MRF182SR1 945 mosfet NI-360	PDF
MHW1244 Abstract: No abstract text available Text: MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and	Original	MHW1244/D MHW1244 MHW1244/D	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and	Original	MHW1244/D MHW1244 MHW1244/D	PDF
MHW1224 Abstract: CTB22 Text: Freescale Semiconductor, Inc. Order this document by MHW1224/D SEMICONDUCTOR TECHNICAL DATA NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor, Inc. The RF Line MHW1224 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion	Original	MHW1224/D MHW1224 MHW1224 CTB22	PDF
MHW1244 Abstract: XMD26 Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 CATV Amplifier Module Features • • • • Specified for 12–, 22– and 26–Channel Loading Excellent Distortion Performance Superior Gain, Return Loss and DC Current Stability over Temperature	Original	MHW1244/D MHW1244 MHW1244 XMD26	PDF
MHW1224 Abstract: XM26 Text: MOTOROLA Order this document by MHW1224/D SEMICONDUCTOR TECHNICAL DATA MHW1224 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and	Original	MHW1224/D MHW1224 MHW1224 XM26	PDF
MHW1244 Abstract: DEVICE T76 Text: MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 CATV Amplifier Module Features • • • • Specified for 12–, 22– and 26–Channel Loading Excellent Distortion Performance Superior Gain, Return Loss and DC Current Stability over Temperature	Original	MHW1244/D MHW1244 MHW1244 DEVICE T76	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor, Inc. Order this document by MHW1224/D SEMICONDUCTOR TECHNICAL DATA NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor, Inc. The RF Line MHW1224 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion	Original	MHW1224/D MHW1224 MHW1224/D	PDF
SMD Transistor z6 Abstract: 465B BC847 GSM1900 LP2951 MRF18090B MRF18090BS Text: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up	Original	MRF18090B/D MRF18090B MRF18090BS MRF18090B SMD Transistor z6 465B BC847 GSM1900 LP2951 MRF18090BS	PDF
MRF1090MA Abstract: microwave transistor Text: MOTOROLA Order this document by MRF1090MA/D SEMICONDUCTOR TECHNICAL DATA Microwave Pulse Power Transistor MRF1090MA Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc	Original	MRF1090MA/D MRF1090MA MRF1090MA microwave transistor	PDF
MRF373A Abstract: MRF373ALSR1 MRF373AR1 MRF373AS 845MHz Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these	Original	MRF373A/D MRF373AR1 MRF373ALSR1 MRF373A MRF373ALSR1 MRF373AS 845MHz	PDF
MRF373A Abstract: No abstract text available Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF373A/D MRF373A MRF373AS	PDF
smd wb1 Abstract: smd diode wb1 smd wb2 wb1 sot package sot-23 465B BC847 GSM1800 LP2951 MRF18090A MRF18090AS Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up	Original	MRF18090A/D MRF18090A MRF18090AS MRF18090A smd wb1 smd diode wb1 smd wb2 wb1 sot package sot-23 465B BC847 GSM1800 LP2951 MRF18090AS	PDF
MRF373A Abstract: MRF373AR1 MRF373AS MRF373ASR1 Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these	Original	MRF373A/D MRF373AR1 MRF373ASR1 MRF373A MRF373AS MRF373ASR1	PDF

H6050 Abstract: Z9 TRANSISTOR SMD BC847 SOT-23 PACKAGE 0805 Text: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up	Original	MRF18090B/D MRF18090B MRF18090BS H6050 Z9 TRANSISTOR SMD BC847 SOT-23 PACKAGE 0805	PDF
smd transistor wb1 Abstract: wb1 sot package sot-23 Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up	Original	MRF18090A/D MRF18090A MRF18090AS smd transistor wb1 wb1 sot package sot-23	PDF
MRF373A Abstract: MRF373 MRF373AS VJ3640Y225KXBAT chip capacitor vishay Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these	Original	MRF373A/D MRF373A MRF373AS MRF373 MRF373AS VJ3640Y225KXBAT chip capacitor vishay	PDF
MRF18060 Abstract: BC847 GSM1900 GSM1930 LP2951 MRF18060B MRF18060BS RF Power Transistor MRF18060B MRF18060 Text: MOTOROLA Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060B MRF18060BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	MRF18060B/D MRF18060B MRF18060BS GSM1930 MRF18060B MRF18060 BC847 GSM1900 GSM1930 LP2951 MRF18060BS RF Power Transistor MRF18060B MRF18060	PDF
J5-18 Abstract: MRF18085A Text: MOTOROLA Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA MRF18085A RF Power Field Effect Transistors MRF18085AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18085ALSR3 The RF MOSFET Line Designed for GSM and GSM EDGE base station applications with	Original	MRF18085A/D MRF18085A MRF18085AR3 MRF18085ALSR3 J5-18	PDF
Motorola transistors M 724 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up	Original	MRF18030B/D MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 Motorola transistors M 724	PDF
400S Abstract: MRF18030A MRF18030AR3 MRF18030ASR3 Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18030A/D MRF18030AR3 MRF18030ASR3 400S MRF18030A MRF18030ASR3	PDF
MRF18030A Abstract: 2019 gain 400S MRF18030AR3 MRF18030ASR3 1003 c2 J1022 Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18030A/D MRF18030AR3 MRF18030ASR3 MRF18030A 2019 gain 400S MRF18030ASR3 1003 c2 J1022	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies	Original	MRF18030B/D MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 MRF18030B/D	PDF
Untitled Abstract: No abstract text available Text: 16 15 14 13 12 11 $ 10 a A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. M DWG STATUS MISSING SYMBOLS SYMBOL DEFINITION TOTAL NO OF INSPECTIONS REQUIRED LAST NO. USED	OCR Scan	17JL06 26FE07 19AP07	PDF

K 3569 7.G EQUIVALENT Search Results

K 3569 7.G EQUIVALENT Result Highlights (5)

K 3569 7.G EQUIVALENT Datasheets Context Search

mrf182

MHW1244

Untitled

MHW1224

MHW1244

MHW1224

MHW1244

Untitled

SMD Transistor z6

MRF1090MA

MRF373A

MRF373A

smd wb1

MRF373A

H6050

smd transistor wb1

MRF373A

MRF18060

J5-18

Motorola transistors M 724

400S

MRF18030A

Untitled

Untitled