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    Renesas Electronics Corporation MK2761AS

    IC CLK/FREQ SYNTH 16SOIC
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    Renesas Electronics Corporation MK2761ASLF

    IC CLK/FREQ SYNTH 16SOIC
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    Renesas Electronics Corporation MK2761ASTR

    IC CLK/FREQ SYNTH 16SOIC
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    DigiKey MK2761ASTR Reel
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    TE Connectivity 610-12K-276

    610-12K-276
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    DigiKey 610-12K-276 Bulk 10
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    Master Electronics 610-12K-276
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    Knowles Corporation EK-27659-C05

    MIC COND ANALOG OMNI -53DB
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    K 276 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SIEMENS saw sensor

    Abstract: c619 siemens matsua saw 45 S 867
    Text: Index of Types Type Page C C 619 C 620 C 621 Page S 39 41, 42 43, 44 K K 1150 K 164 K 220 K 227 K 276 K 350 K 45 K 500 Type 45 49, 50 46 64 74 47 72, 73 68 S 153 S 235 S 236 S 237 S 238 S 364 S 464 S 861 S 863 S 867 S 869 S 891 76 77 78, 79 80 81, 82 83 84


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    PDF

    epcos 500 05

    Abstract: B57227 K 227 epcos 500 B57227 B57276 K 276 b57745 B57020M
    Text: Temperature Measurement Probe Assemblies Probe assemblies Page Probe assemblies B57703, M 703 B57227, K 227 B57500, M 500 B57500, K 500 B57501, K 501 B57020, M 2020 B57745, K 45 B57276, K 276 111 05/02 112 114 116 118 118 120 122 124 Herausgegeben von EPCOS AG


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    PDF B57703, B57227, B57500, B57501, B57020, B57745, B57276, epcos 500 05 B57227 K 227 epcos 500 B57227 B57276 K 276 b57745 B57020M

    CYPRESS CROSS REFERENCE dual port sram

    Abstract: CY7C024AV
    Text: CY7C024AV/024BV/025AV/026AV 3.3 V 4 K / 8 K / 16 K x 16 Dual-Port Static RAM 3.3 V 4 K / 8 K / 16 K × 16 Dual-Port Static RAM Features • True dual-ported memory cells which enable simultaneous access of the same memory location ■ 4, 8 or 16 K × 16 organization


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    PDF CY7C024AV/024BV/025AV/026AV 100-pin CY7C024AV/024BV /025ising CYPRESS CROSS REFERENCE dual port sram CY7C024AV

    Untitled

    Abstract: No abstract text available
    Text: CY7C024AV/024BV/025AV/026AV 3.3 V 4 K / 8 K / 16 K x 16 Dual-Port Static RAM 3.3 V 4 K / 8 K / 16 K × 16 Dual-Port Static RAM Features • Automatic power down ■ True dual-ported memory cells which enable simultaneous access of the same memory location


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    PDF CY7C024AV/024BV/025AV/026AV 100-pin CY7C024AV/024BV /025AV/

    CY14a101

    Abstract: No abstract text available
    Text: CY14V101LA CY14V101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 128 K × 8 (CY14V101LA) or 64 K × 16 (CY14V101NA) ■ Hands off automatic STORE on power down with only a small


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    PDF CY14V101LA CY14V101NA CY14V101LA/CY14V101NA CY14a101

    Untitled

    Abstract: No abstract text available
    Text: CY14V101LA CY14V101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Functional Description Features • 25 ns and 45 ns access times ■ Internally organized as 128 K × 8 (CY14V101LA) or 64 K × 16 (CY14V101NA) ■ Hands off automatic STORE on power down with only a small


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    PDF CY14V101LA CY14V101NA CY14V101LA) CY14V101NA) 48-ball

    CY14A

    Abstract: CY14A101L
    Text: CY14V101LA CY14V101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 128 K × 8 (CY14V101LA) or 64 K × 16 (CY14V101NA) ■ Hands off automatic STORE on power down with only a small


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    PDF CY14V101LA CY14V101NA CY14V101LA/CY14V101NA CY14A CY14A101L

    Untitled

    Abstract: No abstract text available
    Text: CY14V101LA CY14V101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 128 K × 8 (CY14V101LA) or 64 K × 16 (CY14V101NA) ■ Hands off automatic STORE on power down with only a small


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    PDF CY14V101LA CY14V101NA CY14V101LA) CY14V101NA)

    Untitled

    Abstract: No abstract text available
    Text: CY7C024AV/025AV/026AV 3.3 V 4 K / 8 K / 16 K x 16 Dual-Port Static RAM 3.3 V 4 K / 8 K / 16 K × 16 Dual-Port Static RAM Features • Automatic power down ■ True dual-ported memory cells which enable simultaneous access of the same memory location ■ Expandable data bus to 32 bits or more using Master and Slave


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    PDF CY7C024AV/025AV/026AV CY7C024AV/025AV/026AV)

    Untitled

    Abstract: No abstract text available
    Text: CY7C024AV/025AV/026AV 3.3 V 4 K / 8 K / 16 K x 16 Dual-Port Static RAM 3.3 V 4 K / 8 K / 16 K × 16 Dual-Port Static RAM Features • Automatic power down ■ True dual-ported memory cells which enable simultaneous access of the same memory location ■ Expandable data bus to 32 bits or more using Master and Slave


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    PDF CY7C024AV/025AV/026AV CY7C024AV/025AV/026AV)

    CYPRESS CROSS REFERENCE dual port sram

    Abstract: cy7c025av-25ai
    Text: CY7C024AV/025AV/026AV 3.3 V 4 K / 8 K / 16 K x 16 Dual-Port Static RAM 3.3 V 4 K / 8 K / 16 K × 16 Dual-Port Static RAM Features • Automatic power down ■ True dual-ported memory cells which enable simultaneous access of the same memory location ■ Expandable data bus to 32 bits or more using Master and Slave


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    PDF CY7C024AV/025AV/026AV 100-pin CY7C024AV/025AV/026AV) CYPRESS CROSS REFERENCE dual port sram cy7c025av-25ai

    AN1064

    Abstract: an4359 circuit diagram for automatic voltage regulator G PLC connection CY14B101KA
    Text: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 128 K × 8 (CY14B101KA) or


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    PDF CY14B101KA CY14B101MA CY14B101KA) CY14B101MA) AN1064 an4359 circuit diagram for automatic voltage regulator G PLC connection CY14B101KA

    Untitled

    Abstract: No abstract text available
    Text: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 128 K × 8 (CY14B101KA) or


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    PDF CY14B101KA CY14B101MA CY14B101KA) CY14B101MA)

    Diode KD 521 a

    Abstract: U106B U106A operational amplifier discrete schematic POWER AMPLIFIER CIRCUIT DIAGRAM 10000 schematics for a PA amplifier CX77301 LMV722 PL19 CLASS diode rf DETECTOR
    Text: APPLICATION NOTE Power Amplifier Control For ETSI 11.10-Compliant Cellular Handsets 1 Simplifying: Introduction Vo KaKs = DSP 1 + K a K s K d K c Controlling the power amplifier in a Global System for Mobile Communications (GSM ) compatible radio is one of the more


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    PDF 10-Compliant Diode KD 521 a U106B U106A operational amplifier discrete schematic POWER AMPLIFIER CIRCUIT DIAGRAM 10000 schematics for a PA amplifier CX77301 LMV722 PL19 CLASS diode rf DETECTOR

    Untitled

    Abstract: No abstract text available
    Text: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features • Industry standard configurations ❐ Single 3 V +20%, –10% operation ❐ Industrial temperature ■ Packages


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    PDF CY14B101KA CY14B101MA CY14B101KA) CY14B101MA)

    Untitled

    Abstract: No abstract text available
    Text: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features • Industry standard configurations ❐ Single 3 V +20%, –10% operation ❐ Industrial temperature ■ Packages


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    PDF CY14B101KA CY14B101MA CY14B101KA) CY14B101MA)

    Untitled

    Abstract: No abstract text available
    Text: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features • Industry standard configurations ❐ Single 3 V +20%, –10% operation ❐ Industrial temperature ■ Packages


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    PDF CY14B101KA CY14B101MA 44-/54-pin 48-pin CY14B101KA) CY14B101MA)

    NTC Thermistor S 234

    Abstract: NTC CODE Thermistors ntc thermistors for inrush current limiting NTC 10 S M NTC 10 thermistor
    Text: NTC Thermistors Contents Type NTC thermistors for temperature measurement and/or compensation SMDs C 620 C 621 M 841 Mini sensors M 867 K 164 Disks M 891 S 891 Beads, glass-encapsulated K 17 K 19 M 85 Probe assemblies M 703 K 45 K 252 Z 10 K 276 K 277 S 234


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    PDF B5-P2532-X-X-7600 B425-P2542-X-X-7400 NTC Thermistor S 234 NTC CODE Thermistors ntc thermistors for inrush current limiting NTC 10 S M NTC 10 thermistor

    eprom emulator Greenwich

    Abstract: NC28205 IC 7805 pin diagram LMS 7805 GR27128 GR27512 intel 2147 12-5v 7805 pin diagram of 7805 74LSOO
    Text: -'-9TÎ GREENWICH GR 2764 — 27128 — 27256 27512 — 27513 EPROM EMULATORS INSTRUMENTS UD • Plug-in replacem ents for 8 K /1 6 K /3 2 K /6 4 K EPROM S. • Fits standard 28 pin JE D E C R O M sockets. • R etains data for 10 years. • C o m p a tib le


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    PDF 8K/16K/32K/64K eprom emulator Greenwich NC28205 IC 7805 pin diagram LMS 7805 GR27128 GR27512 intel 2147 12-5v 7805 pin diagram of 7805 74LSOO

    MN6617

    Abstract: CXD2500 dj bk SM5877AM sumida FM SM5877 SM5877A filter 400hz AD725C
    Text: ri k T * - L « N irf 111 K P p Q ^ «Í2 >K ^ 0 0 K ml ^ w COj- ^ 1 'Kr 'S K K Q A n £f «J Q A ”N * 1'N- & TT A Pu v j u i 1-H £ *I W S' •E o g t§ i ,K t 5s ' s >\ 1 H is */ * CM K "f " V JFn~ fig 3 « 3 5 ^ &< ij a§£ ►/ K > LO uri ■A Y *D


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    PDF SM5877 MN6617 1168MHz CXD2500 9344iVIHI 2336MHz 9344MHz) SM5877AM dj bk SM5877AM sumida FM SM5877 SM5877A filter 400hz AD725C

    Untitled

    Abstract: No abstract text available
    Text: X Pos ] I Stk./ pcs Typ-Nr./ Bezeichnung/ Description K a b e lw in k e ls te c k e r Coble mount angle plug Kabelwinkelbuchse Coble mount ongle jock Kobel Cable Sch rump is c h i ouch Heat s h r in k Schrumpfschlauch Heat s h r in k © © © Bemerkung/


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    PDF RG-174 RNF-100-3/16-0 RNF-100-3/16-0 SOOVeff/50Hz SOOVeff/50Hz AA-CS-12 K-2165

    Untitled

    Abstract: No abstract text available
    Text: r 0 7 '5 r-o er- + 0 - 0 05 un un ro o I H<o + CD o ~<o un U J -F" un 7,5 a 9.8 Pos. Benennung Farbe ähnl.RAL-Nr. Kodierrippe K 510 688 Z wasserblau 5021 ohne K 510 688 K currygelb 1027 C-D eigelb 1001 B2-D K 510 688 H erikaviolett 4003 B2-C K 510 688 G blaugrau


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    PDF 510688C 2008Kunze K510688A-Z

    .5555b

    Abstract: 29F200 29f200 70 ALG 2-72 29f200-90 165555H AS29F200T 6kX8 bit memory array
    Text: A Hi” h IVrfnrm am r ¿ 5 6 k x 8 / I Z 8 K x 16 SV C M O S I la sh HB K IP R O M ASZ9I-200 Z ^ K x X / I 2 8 K x 1 6 C M O S ¡'l a s h I I P K O M Preliminary information Features • Organization: 256KX8 or 128KX16 • Sector architecture - O ne 16K; tw o 8K; on e 32K; and three 64K byte sectors


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    PDF t-200 256KX8 128KX16 55/70/90/120ns AS29F200B-70TI AS29F200B-90TC AS29F200B-90T1 AS29F200T-70TC AS29F200T-70TI AS29F200T-907C .5555b 29F200 29f200 70 ALG 2-72 29f200-90 165555H AS29F200T 6kX8 bit memory array

    1-800-SAMTEC-9

    Abstract: BKS-109-01-L-V
    Text: F-206 amtec B K S -1 6 9 -0 1 - L - V - P B K S -1 0 9 -0 1 - L - V BKS - F M and -L M , and BKT options only: B K S -1 2 5 -0 1 - L - V B K T -1 2 9 -0 1 - L - V - S B K T -1 31- 0 3 - F - V B K T -1 4 9 -0 5 -L -V n UCAnCD BKT, BKS 4 DOI ADI7CmJ 1 m m rULAnl£t


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    PDF F-206 BKS-109-01-L-V BKT-129-01-L-V-S BKT-149-05-L-V BKS-169-01-L-V-P BKT-131-03-F-V aver60 1-800-SAMTEC-9 BKS-109-01-L-V