Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K 2545 TRANSISTOR Search Results

    K 2545 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    K 2545 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k 1535

    Abstract: 2sc2373
    Text: JMnic Product Specification 2SC2373 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Fast switching time APPLICATIONS ・For use in horizontal deflection output for B/W TV applications PINNING PIN DESCRIPTION


    Original
    PDF 2SC2373 O-220 k 1535 2sc2373

    2sc2373

    Abstract: k 1535
    Text: SavantIC Semiconductor Product Specification 2SC2373 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Fast switching time APPLICATIONS ·For use in horizontal deflection output for B/W TV applications PINNING


    Original
    PDF 2SC2373 O-220 2sc2373 k 1535

    2SC2373

    Abstract: k 1535 30ma 40v npn 2SC237
    Text: Inchange Semiconductor Product Specification 2SC2373 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Fast switching time APPLICATIONS ・For use in horizontal deflection output for B/W TV applications


    Original
    PDF 2SC2373 O-220 2SC2373 k 1535 30ma 40v npn 2SC237

    IC 4047

    Abstract: K 2545 transistor IC 4047 BE ic 4047 datasheet data sheet of IC 4047 HSC2625S
    Text: HI-SINCERITY Spec. No. : Preliminary Data Issued Date : 1998.02.01 Revised Date : 1999.08.01 Page No. : 1/2 MICROELECTRONICS CORP. HSC2625S NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC2625S is designed for use in general purpose amplifier and switching applications.


    Original
    PDF HSC2625S HSC2625S IC 4047 K 2545 transistor IC 4047 BE ic 4047 datasheet data sheet of IC 4047

    4-BIT BINARY TO THERMOMETER encoder

    Abstract: 4064B MSM64164C QFP80-P-1420-0
    Text: MSM64164C 4-Bit Microcontroller User’s Manual FIRST EDITION December 1998 OKI ELECTRIC INDUSTRY CO., LTD. E2Y0002-28-41 NOTICE 1. The information contained herein can change without notice owing to product and/or technical improvements. Before using the product, please make sure that the information


    Original
    PDF MSM64164C E2Y0002-28-41 Appendix-80 MSM64164C Appendix-81 Appendix-82 4-BIT BINARY TO THERMOMETER encoder 4064B QFP80-P-1420-0

    4064B

    Abstract: MSM64164C QFP80-P-1420-0 Transistor circuits alarm K 2545
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original
    PDF Appendix-80 MSM64164C Appendix-81 Appendix-82 4064B QFP80-P-1420-0 Transistor circuits alarm K 2545

    u 4064b

    Abstract: 4064B MSM64164C QFP80-P-1420-0
    Text: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original
    PDF MSM64164C E2Y0002-28-41 Appendix-80 MSM64164C Appendix-81 Appendix-82 u 4064b 4064B QFP80-P-1420-0

    MO-229 footprint

    Abstract: LX13043CLD transistor 33825 MO-229
    Text: LX13043 1.0A Low Dropout Regulator TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION The LX13043 features on-chip trimming of the internal voltage enabling precise output voltages. The BiPolar output transistor has a low dropout voltage even at full output


    Original
    PDF LX13043 LX13043 tanta21, MO-229 footprint LX13043CLD transistor 33825 MO-229

    Untitled

    Abstract: No abstract text available
    Text: PTAC260302SC Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz Description The PTAC260302SC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. This device integrates a 10-W main and a


    Original
    PDF PTAC260302SC PTAC260302SC 30-watt H-37248H-4

    LM158

    Abstract: lm358 sum DATASHEET IC LM358 LM158A LM258 LM258A LM258N LM358 LM358A transistor 2n 929
    Text: LM158,A-LM258,A LM358,A LOW POWER DUAL OPERATIONAL AMPLIFIERS . . . . . . . . INTERNALLY FREQUENCY COMPENSATED LARGE DC VOLTAGE GAIN : 100dB WIDE BANDWIDTH unity gain : 1.1MHz (temperature compensated) VERY LOW SUPPLY CURRENT/AMPLI (500µA) - ESSENTIALLY INDEPENDENT OF


    Original
    PDF LM158 -LM258 LM358 100dB lm358 sum DATASHEET IC LM358 LM158A LM258 LM258A LM258N LM358A transistor 2n 929

    MOV 270/20

    Abstract: 2322 640 90007 NTC thermistor philips phct 203 VARISTOR 275 K20 cma 00124 BC 2222 037 71109 ic 40154 2322 661 91002 UAA 1006 34821
    Text: Information Product guide 200 BCcomp Information World wide web New products and highlights Series index Ceramic capacitors Film capacitors Electrolytic capacitors Variable capacitors Linear resistors Non-linear resistors Switches and potentiometers 02/2003


    Original
    PDF

    LM158

    Abstract: LM1581 LM358 equivalent of IC LM358 lm358 sum at powersupply schematic DATASHEET IC LM358 ic lm258n lm358 thomson LM158A
    Text: LM158,A-LM258,A LM358,A LOW POWER DUAL OPERATIONAL AMPLIFIERS . . . . . . . . INTERNALLY FREQUENCY COMPENSATED LARGE DC VOLTAGE GAIN : 100dB WIDE BANDWIDTH unity gain : 1.1MHz (temperature compensated) VERY LOW SUPPLY CURRENT/AMPLI (500µA) - ESSENTIALLY INDEPENDENT OF


    Original
    PDF LM158 -LM258 LM358 100dB LM1581 LM358 equivalent of IC LM358 lm358 sum at powersupply schematic DATASHEET IC LM358 ic lm258n lm358 thomson LM158A

    Pan Overseas

    Abstract: 25AT 2SA160H
    Text: F 2 S A 1 6 0 iJ / 2 S C 4 1 5 6 No.2545 PNP/NPN E p i t a x i a l P l a n a r Type S ilico n Transistors Hi g h - S peed S w i t c h i n g .A p p l i cations IT .j # X. .Ÿ$£' X<#W ^aatures « ♦ Adoption of FBET process Jl . High breakdown voltage Vq£q =(- 50V)


    OCR Scan
    PDF 2SA1604 2SC4156 2SA160H 100mA c3100114* Pan Overseas 25AT

    TRANSISTOR D2545

    Abstract: D2545 2005A TRANSISTOR IFW Transistor BC 227 d2545 transistor Sanyo 2SA1604 2SC4156
    Text: i’,ang^ffìTa»eaaer?iaa SANYO SEMICONDUCTOR CORP 32E D 7 ^ 7 0 7 ^ OOOfiTOfl 7 B \T-3S-27 r - 3 7 - 2 7 PN P /N PN Epitaxial Planar Silicon Transistors 2029A High-Speed Switching Applications 2545 Features . Adoption of FBET process . High breakdown voltage VCEO=(- 50V)


    OCR Scan
    PDF r-37-27 D2545 2SA1604 T-91-20 SC-43 TRANSISTOR D2545 D2545 2005A TRANSISTOR IFW Transistor BC 227 d2545 transistor Sanyo 2SC4156

    2SA1090

    Abstract: TE 2556 P17W 25p8 2SA1081 2SA1082 2SA1083 2SA1084 2SA1085 2SC2532
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan
    PDF 860MHz, 2SA1090 TE 2556 P17W 25p8 2SA1081 2SA1082 2SA1083 2SA1084 2SA1085 2SC2532

    K 2545 transistor

    Abstract: 41 BF transistor transistor bf 422 transistor BF 606 BF 830 transistor transistor marking code 41 BF transistors bf 423 BF423S Transistor marking code K transistor BF 423
    Text: TELEFUNKEN ELECTRONIC 17E D • 6 ^ 2 0 0 % 000^407 BF 421S BF 423 S ■¡nmiFWOKIKl electronic CfMtwT«cfwwtoe*e$ Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-class power stages in TV-receivers Features: • BF 421 S complementary to BF 420 S


    OCR Scan
    PDF BF421S BF420S BF423S 150K/W T0126 15A3DIN K 2545 transistor 41 BF transistor transistor bf 422 transistor BF 606 BF 830 transistor transistor marking code 41 BF transistors bf 423 BF423S Transistor marking code K transistor BF 423

    sab 3013

    Abstract: IC tda 1571 TDA1506 sab3013 SAA5051 SAB3034 SAF 3019 Tda1533 SAA 1059 valvo halbleiter
    Text: Elektronik. Wir bauen die Elemente. V A m Integrierte Schaltungen für die Unterhaltungselektronik Produktprogram m t IT 1. A pril 1983 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich im m er rascher zum Motor für eine


    OCR Scan
    PDF Vertrieb-117 OT-124 OT-138 OT-150 OT-32 OT-110 OT-131 OT-141 OT-108 OT-109 sab 3013 IC tda 1571 TDA1506 sab3013 SAA5051 SAB3034 SAF 3019 Tda1533 SAA 1059 valvo halbleiter

    motorola 7673 A

    Abstract: LA 7673 motorola 7673 b Motorola 8039
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF957T1 The RF Line NPN Silicon Low Noise, High-Frequency Transistor Iq = 100 m A LO W NO ISE H IG H -FR E Q U EN C Y TR A N SIS TO R D e s ig n e d fo r u s e in h ig h g a in , lo w n o is e s m a ll-s ig n a l a m p lifie rs . T h is


    OCR Scan
    PDF MRF957T1 Collector-Em96 MRF957T1 motorola 7673 A LA 7673 motorola 7673 b Motorola 8039

    LA 3660

    Abstract: 32-bit shift register DST1
    Text: S-7180A 32-bit THERMAL HEAD DRIVER The S-7180A is a thermal print head driver, consisting of a CMOS 32-bit shift re g iste r with s e ria l input and serial/parallel output, a C M O S 32-bit latch and 32 Nch opendrain drivers. It directly drives a thin film or a thick


    OCR Scan
    PDF S-7180A 32-bit S-7180A A123443 LA 3660 32-bit shift register DST1

    HA3-5147-5

    Abstract: HA2-5147-5 HA7-5147-2 HA2-5147-2
    Text: m HA-5147 HARRIS S E M I C O N D U C T O R Ultra-Low Noise Precision High Slew Rate Wideband Operational Amplifier March 1993 Features Description • • Wide Gain Bandwidth Av ¿ 1 0 .120MHz


    OCR Scan
    PDF HA-5147 HA-5147 120MHz) 800V/mV) 126dB) 140mW 00V/V 002jiV/Div. HA-5147, HA-5147A HA3-5147-5 HA2-5147-5 HA7-5147-2 HA2-5147-2

    MRF581A

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF581 MRF581A MRF5812, R1,R2 NPN Silicon High-Frequency Transistors D e signed for high current low power amplifiers up to 1.0 GHz. • Low N oise 2.0 d B @ 5 0 0 M H z • Low Intermodulation Distortion


    OCR Scan
    PDF MRF581 MRF581A MRF5812, 56-590-65/3B

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan
    PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    TE 2549 MOTOROLA

    Abstract: MRF581A motorola MRF5812 RF581 MRF581
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF581 MRF581A MRF5812, R1, R2 NPN Silicon H igh-Frequency Transistors Designed for high current low power am plifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion •


    OCR Scan
    PDF MRF5812 MRF581 MRF581A MRF5812, TE 2549 MOTOROLA motorola MRF5812 RF581

    IC LM331

    Abstract: LM331H IC LM331 model LM331AH IC LM331 operation LM331 f to v converter LM231H 56805 LM231AH LM331
    Text: SflE D NATL SEMICOND LINEAR LM131A/LM131, LM231A/LM231, LM331A/LM331 Precision Voltage-to-Frequency Converters General Description The LM131/LM231/LM331 family of voltage-to-frequency converters are ideally suited for use in simple low-cost cir­ cuits for analog-to-digital conversion, precision frequencyto-voltage conversion, long-term integration, linear frequen­


    OCR Scan
    PDF b501124 LM131A/LM131/LM231A/LM231/LM331A/LM331 LM131A/LM131, LM231A/LM231, LM331A/LM331 LM131/LM231/LM331 TL/H/5680-20 TL/H/5680-21 LM131AH, LM131H, IC LM331 LM331H IC LM331 model LM331AH IC LM331 operation LM331 f to v converter LM231H 56805 LM231AH LM331