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    K 219 TRANSISTOR Search Results

    K 219 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K 219 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FK 231 SA 220

    Abstract: SAL1 FK 215 32 MI FK 213 FK 216 SA FK 209
    Text: Heatsinks for transistors in plastic case Kühlkörper für Transistoren im Plastikgehäuse Dissipateurs pour transistors en boîtier plastique 15 11,5 18,5 C 1,5 17 K/W Liegend für Halbleiter-Schraubmontage horizontal for semiconductor screw assembly 28


    Original     		PDF

    BD245C

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BD245C BD246C Features • • NPN Silicon Power Transistors With TO-3PN package Complement to BD246C, BD245C Maximum Ratings Symbol V CEO


    Original     		PDF BD245C BD246C BD246C, 50mAdc, 100VdcIMENSIONS BD245C

    2SC2579

    Abstract: 2SC2579 transistor Ic30ad
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC2579 Features • • With TO-3PN package Power amplifier applications NPN Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO


    Original     		PDF 2SC2579 50mAdc, 160Vdc 2SC2579 2SC2579 transistor Ic30ad

    S637T

    Abstract: veb 211
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# S637T Features • • With TO-3PN package Switching applications NPN Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO IC


    Original     		PDF S637T 100mAdc, 500Vdc 10Adc, S637T veb 211

    2SD1238

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD1238 Features • • With TO-3PN package Amplifier applications NPN Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO


    Original     		PDF 2SD1238 50mAdc, 80Vdc 2SD1238

    2SC326

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3264 Features • NPN Silicon Transistors With MT-200 package Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage


    Original     		PDF 2SC3264 MT-200 MT-200 12Vdc) 25mAdc) 2SC326

    2sc4140

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC4140 Features • • • Silicon voltage and high speed switching transistors With TO-3PN package Switching regulator and general purpose


    Original     		PDF 2SC4140 10Adc, 10Adc 2sc4140

    2SC3264

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1295 Features • • PNP Silicon Power Transistors Complement to type 2SC3264 Audio and general applications Maximum Ratings Symbol V CEO


    Original     		PDF 2SA1295 2SC3264 MT-200 2SC3264

    2SC3263

    Abstract: veb 211 772 pnp
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SA1294 Features • • • PNP Silicon Power Transistors With TO-3PN package Audio and general purpose Complementary to 2SC3263 Maximum Ratings


    Original     		PDF 2SA1294 2SC3263 25mAdc, 2SC3263 veb 211 772 pnp

    2SC3688

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC3688 Features • • With TO-3PN package High resolution display horizontal deflection output driver NPN Silicon Power Transistors Maximum Ratings


    Original     		PDF 2SC3688 100mAdc, 2SC3688

    2SD1397

    Abstract: 800VDC
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD1397 Features • • With TO-3PN package Horizontal deflection output driver NPN Silicon Power Transistors Maximum Ratings Symbol V CEO


    Original     		PDF 2SD1397 100mAdc, 80NCHES 2SD1397 800VDC

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC4466 Features • • • Silicon NPN triple diffused planar transistors Complement to type 2SA1693 Audio and general purpose NPN Silicon


    Original     		PDF 2SC4466 2SA1693 50mAdc,

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC3336 Features • • With TO-3PN package Switching regulator and high voltage switching applications NPN Silicon Power Transistors Maximum Ratings


    Original     		PDF 2SC3336 10mAdc,

    2SC5352

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC5352 Features • • With TO-3PN package Switching regulator and high voltage switching applications NPN Silicon Power Transistors Maximum Ratings


    Original     		PDF 2SC5352 10mAdc, 2SC5352

    BU908

    Abstract: of 555 ic of ic 555 IC 555 veb 211 45ad
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BU908 Features • • • High voltage, high speed switching NPN transistors. With TO-3PN package Intended for use in horizontal deflection circuits of color television


    Original     		PDF BU908 BU908 of 555 ic of ic 555 IC 555 veb 211 45ad

    transistor bup22c

    Abstract: IC 555 BUP22
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BUP22C Features • • • High voltage With TO-3PN package NPN Silicon power transistor intended for high voltage, high speed switching industrial applications.


    Original     		PDF BUP22C transistor bup22c IC 555 BUP22

    buw13a

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BUW13A Features • • With TO-3PN package Switching regulator applications NPN Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO


    Original     		PDF BUW13A 100mAdc, Collecto10Adc, 10Adc, buw13a

    M38527

    Abstract: M38527/2-05D M38527/01-036D A55485/02-032D M38527/06-022D M38527/3-01D M38527/02-001D M38527/02-005D M38527/03-015N M38527/1-030D
    Text: molded power transistor mounts Material Specifications: Nylon, per ASTM D 4066 PA111 UL Rated 94V-2 Oxygen Rating Index: Over 28% Standard Drawing Tolerances: unless otherwise indicated Fractions: +_ 1/64 (0.4) .XX = +_ 0.01 (0.25) + _ 0.10 (2.5) .X = .XXX = +_ 0.005 (0.13)


    Original     		PDF PA111 O-202, O-220 HC-18/U, HC-43/U HC-49/U CI-192-028 M38527 M38527/2-05D M38527/01-036D A55485/02-032D M38527/06-022D M38527/3-01D M38527/02-001D M38527/02-005D M38527/03-015N M38527/1-030D

    yx 861

    Abstract: zener FR diode 2ao2 diode BAND
    Text: n 1. v ï — v - n Package List m Discrete Semiconductor Devices — □ - V 'à •+- I "N « A te irv u m « -£ o K S *- « > fa’ V •fr -w Panasonic - 219 - il H Item S M ini 5-pin S M ini(4-pin) U n it mm 2 UP 1 .1 0 4251 -i 1 25 îO 1_ 0 425


    OCR Scan     		PDF LN1871 tN1371GC6- LN1371 yx 861 zener FR diode 2ao2 diode BAND

    NI00

    Abstract: No abstract text available
    Text: • 4flS5452 001bl4fl 2b^ ■ INR Insulated Gate Bipolar Transistor other Products From IR r INTERNATIONAL RECTIFIER bSE D Fast-Speed IGBT Modules Part Num ber B V C ES Collector to Em itter Breakdown Voltage V IR G T I0 6 5 F 0 6 IR G T I1 2 0 F 0 6 IR G T I1 6 5 F 0 6


    OCR Scan     		PDF 4flS5452 001bl4fl NI00

    diode sg 32

    Abstract: p519 em 518 diode sgsp218 IN6723 SG-45 diode P319 TL 1838 sgsp318 diode sg 82
    Text: s G S“ THOMSON 07É D J 7 ^ 5 3 7 , 7 3 C. 17 2 9 7 SGSP118/P119 SGSP218/P219 . SGSP318/P319 SGSP518/PS19 ' HIGH SPEED SW ITCHIN G APPLICATIONS ABSOLUTE M A X IM U M RATINGS •d m *! ' d LM . Pto. ^"stg Ti T - 3 9 -H N-CHANNEL POWER MOS TRANSISTORS These products are diffused multi-cel! silicon gate


    OCR Scan     		PDF SGSP118/P119 SGSP218/P219 SGSP318/P319 SGSP518/PS19 OT-82 O-220 SP319 SP519 SGSP218/P219 diode sg 32 p519 em 518 diode sgsp218 IN6723 SG-45 diode P319 TL 1838 sgsp318 diode sg 82

    2N6256

    Abstract: 2N6136 2N6083 A-1489 TRANSISTOR K 1507 2N5944 2N5945 2N5946 2N6080 2N6081
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 260MHz rc-25 2SA777 770MHz, 2N6256 2N6136 2N6083 A-1489 TRANSISTOR K 1507 2N5944 2N5945 2N5946 2N6080 2N6081

    k 219 transistor

    Abstract: Scans-048 DSAGER00063
    Text: Vorläufige technische Daten SSE 216 SSE 2» Süisiu »apn-SpifeaxL8-PXaa&r-Ii gereohb«& Miai&tuEplasfcgeM iise für d i g i t a l e Anwendung. 0,9 - 0.05 mo 13-0,2 Masset «c 0,02 g Sganzwerta» gültig für den Betriebstemperafcurbereich. Maximale loilokfcop-Baais-Bpajmung


    OCR Scan     		PDF III/18/397 k 219 transistor Scans-048 DSAGER00063

    2n2405

    Abstract: 2N1893
    Text: 4302271 üün7ô3 4 HHAS P o w e r Tran sistors File N u m b e r 34 Medium-Power Silicon N-P-N Planar Transistors 2N1893, 2N2405 I ' 3 3 - 0 5 TERMINAL DESIGNATIONS For S m a ll-S ig n a l A p p lic a tio n s In In d u strial and C o m m e rc ia l E q u ip m e n t


    OCR Scan     		PDF 2N1893, 2N2405 2N1893 2N2405* 2N2405. 10VOLTS 2n2405