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    K 151*C TRANSISTOR Search Results

    K 151*C TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K 151*C TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN Transistor 2N3055

    Abstract: transistor 2N3055 2N3055 J 2N3055 transistor k 525
    Text: Silicon NPN Transistor 2N3055 Dim. Inches Minimum Pin 1 — Base Pin 2 — E m itte r Pin 3 — Collector A B C D E F G H J K L M M illim eter Maximum Minimum _ .250 .435 .038 1.177 .655 .420 - .151 .205 - .875 .450 -.043 1.197 .675 .440 .525


    OCR Scan     		PDF 2N3055 O-204AA NPN Transistor 2N3055 transistor 2N3055 2N3055 J 2N3055 transistor k 525

    transister

    Abstract: LE1A
    Text: ETN35-O3O 300 a POWER TRANSISTOR MODULE ’ F e a tu re s • *n$L High Current High DC Current Gain • Hfe • Non Insulated Type ‘ A p p lic a tio n s • 'v T 's 'f High Power Switching Uninterruptible Power Supply • DC -t — DC Motor Controls Welding Machines


    OCR Scan     		PDF ETN35-O3O transister LE1A

    transistor b143

    Abstract: 6DI20MS-050
    Text: 6DI2OMS-O5O 20 a • O utline D ra w ing s POWER TRANSISTOR MODULE F e a tu re s ’• • hFE*'i i^ '- ' High DC Current Gain • High speed sw itching • 7'J —tM U K l*3/SE Including Free W heeling Diode Insulated Type • A p p lic a tio n s 1 Power Switching


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2D I 150M-050 150 a Ä ± / < 7 - ie ^ a . - ; u : Outline Drawings POWER TRANSISTOR MODULE Features • f i S h FE H igh D C Current Gain • H igh Speed Sw itching : Applications • iF L ffl'fV / i —9 General Purpose Inverter • Uninterruptible Power Sup ply


    OCR Scan     		PDF 150M-050 I95t/R89)

    Untitled

    Abstract: No abstract text available
    Text: ETM36-O3O 200a £ ± / « 7 — : O utline D raw ing s POWER TRANSISTOR MODULE F e a tu re s \ High Current • h F E *,ig n High DC Current Gain <> £ Non Insulated T yp e p u i Uk mmi wmm 2-» »V/ IW | i| : Applications High Power Switching “T¿r Uninterruptible Power Supply


    OCR Scan     		PDF ETM36-O3O I95t/RB9)

    20JF

    Abstract: No abstract text available
    Text: E T L 8 1 - O 5 O O 0 0 A i Outline Drawings POWER TRANSISTOR MODULE Features • 71; — 1; 's $ I • ASO n c l u d i n g Free Wheel Excellent Safe Operating Area • JfejiJfi Insulated Type : Applications • 4 " j *f- > 9 • AC Power Switching AC M otor Controls


    OCR Scan     		PDF l95t/R89 Shl50 20JF

    ETG81-O5OA

    Abstract: TI 121 Transistor diode b22 ETG81-050A B-23 M102 T151 transistor ac 151
    Text: ETG81-O5OA 30a : Outline Drawings — )V POWER TRANSISTOR MODULE F e a tu re s • 7 l) — x) K rtffll Including Free W heeling Diode • hFE*'rfl5^N High DC Current Gain Insulated Type IffliÊ ’ A p p lic a tio n s > 9 Power S w itching • AC i — 9 V M


    OCR Scan     		PDF ETG81-O5OA E82988 19S24^ I95t/R89) Shl50 TI 121 Transistor diode b22 ETG81-050A B-23 M102 T151 transistor ac 151

    151S5

    Abstract: I51i 2DI75D-050A
    Text: 2DI75D-050A 75a POWER TRANSISTOR MODULE : Features • 7 y — = f— K rtM • hFEA^Bv.' • *1 1 » Including Free Wheeling Diode High DC Current Gain Insulated Type : Applications "j + 's? • High Power Switching • AC ^ —9 MW A C M otor Controls • DC i — 9WM


    OCR Scan     		PDF 2DI75D-050A 151S5 I51i

    IAEJE

    Abstract: 6di30z
    Text: 6DI30Z-120 30A / <7 - & D . — JU outi ine Drawings • POWER TRANSISTOR MODULE H _ 14 «Q 1 4 .4 4 . -, y : F e a tu re s • ?Ü i/± • 7')- O J j •üIeü High Voltage yy 4 * - sjw u > • A S O A 'lix L ' k % M k, i k iK J ■ «jt Including Free W heeling Diode


    OCR Scan     		PDF 6DI30Z-120 11S19^ I95t/R89) IAEJE 6di30z

    Untitled

    Abstract: No abstract text available
    Text: 1 D I 2 O O Z - 1 O O 200a ">£ : Outline Drawings POWER TRANSISTOR MODULE .2$. — , i6 M ounting ho'« _jfl 5 : F e a tu re s • S liE E H igh V o lta g e » 7 ‘J —4 *4 ij > ? ’ $ -i i[ — K|*3J& • A S O iW & L ' • If e iiifi In c lu d in g Free W h e e lin g D iode


    OCR Scan     		PDF 95t/R89

    50BO

    Abstract: sje transistor
    Text: 1DI5OMA-O5O 50a / < 7 \= 7 - POWER TRANSISTOR MODULE : Features • hF E *'' '-' High DC Current Gain • 7.4 y 7 KA^iSv.' • JfiiSifli Insulated Type High speed sw itching • E l i Ê : A p p lic a tio n s Power Sw itching • ?;/u— Mot or Brake in Inverter


    OCR Scan     		PDF i17TL I95t/R89) 50BO sje transistor

    UTI03

    Abstract: 1di480a 3A1T
    Text: 1DI48OA-O55 480a l- ; : Outline Drawings u POWER TRANSISTOR MODULE I F e a tu re s • fiSiWEE High Voltage • 7 U — sfr-f l) >9*?4 it —K A iK • Including Free W heeling Diode ASO A’i7 £ i . '• Excellent Safe.Operating Area ! • JfiStT6 Insulated Type


    OCR Scan     		PDF 1DI48OA-O55 UTI03 1di480a 3A1T

    Untitled

    Abstract: No abstract text available
    Text: ETN31-O55 200A : Outline Drawings POWER TRANSISTOR MODULE : Features • H ig h C u rre n t • hFE H ig h D C C u rre n t G ain o n In s u la te d T yp e : A p p lic a tio n s • H ig h P o w e r S w it c h in g • U n in te rru p tib le P o w e r S u p p ly


    OCR Scan     		PDF ETN31-O55 I-6740 19S24^

    LG tv

    Abstract: No abstract text available
    Text: 2 D 1 I 5 O Z - 1 O O i 5 0 A D.— Jl" , ± / ' ï r7 — l i W ' + ï i : Outline Drawings POWER TRANSISTOR MODULE : Features • SWEE High Voltage • 7 'J — j f î 'f '} > * ? -f + — K r tiK • ASO Including Free W heeling Diode Excellent Safe Operating Area


    OCR Scan     		PDF l95t/R89 LG tv

    Untitled

    Abstract: No abstract text available
    Text: 6DI3OB-O5O 30a ï ±/<7— /u : O utline D raw ing s POWER TRANSISTOR MODULE »3 H _| i j 1 I U 1 12 , 11 11 • 7 'J — 1.1 — fl m U ' s ? ¥ 4 + — Kr t f f i l • hFEA''üiL' • ÎÊSfeïfi f- U Vj / • ^ J l : ^ F e a tu r e s = = l- < I ncl udi ng Free W h e e lin g D iode


    OCR Scan     		PDF

    ED36

    Abstract: ED-36 B400A
    Text: 6 D 1100 IVI "050 loo a : O utline D ra w in g s s < T7 - Y = 7 > i > 7 . 9 :£ i > 3 . - ) \ s POWER TRANSISTOR MODULE 17 6 l i 14 6 17 I y i- 0 5 . 5 -1 / : F e a tu re s • h F E A ''flL ' H ig h DC C urrent Gain • x - f ’r i - v y x f c f — H ig h speed s w itc h in g


    OCR Scan     		PDF E82988 ED36 ED-36 B400A

    transistor tt 2222

    Abstract: TT 2222 os TT 2222 LM 2222 transistor tt 2222 vertical BLf221 2222-581 BH RV transistor BLF221B OP03
    Text: Preliminary »pacification Philips Semiconductors HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF221B SbE D • 7110fl5b 0DM37Mel 37M HIPHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


    OCR Scan     		PDF BLF221B 7110fl5b 0DM37Mel 004375b transistor tt 2222 TT 2222 os TT 2222 LM 2222 transistor tt 2222 vertical BLf221 2222-581 BH RV transistor BLF221B OP03

    HF 331 transistor

    Abstract: BLF221
    Text: bbsaiai Philips Semiconductors doerbib 3 7 ^ apx Product specification HF/VHF power MOS transistor BLF221 b^E T> N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


    OCR Scan     		PDF BLF221 O-39/3) MBA379 HF 331 transistor BLF221

    NEC 41-A 002

    Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E
    Text: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for


    OCR Scan     		PDF b427M14 NE33300 NE33353E NE33353B NE33387 NE333 NEC 41-A 002 NE33387 ne33353

    uc3807

    Abstract: BLF221 71005 TRANSISTOR 237N BLF221 application International Power Sources VHF transmitter circuit philips resistor 2322 potentiometer 5k PHILIPS 2322
    Text: Philips Semiconductors Product specification HF/VHF power MOS transistor BLF221 SbE D PHILIPS INTERNATIONAL 7110ö5b 004374D 147 « P H I N T-3 FEATURES PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


    OCR Scan     		PDF BLF221 O-39/3) 004374D MSB009- MB8072' mu711Dfl2b MC9804 uc3807 BLF221 71005 TRANSISTOR 237N BLF221 application International Power Sources VHF transmitter circuit philips resistor 2322 potentiometer 5k PHILIPS 2322

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors ^53= 131 0030 1 2 b TO? • APX ^roductspecjfjcat^ UHF power MOS transistor BLF544 N AUER PHILIPS/DISCRETE FEATURES b'iE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures


    OCR Scan     		PDF BLF544 OT171

    2DI200A-050

    Abstract: SRFE T460 LC1100 VEBo-10V
    Text: 2 D I 2 O O A - O 5 O 2 0 0 a s < 7 - h 7 > i > X 9 :E £ > 3 .-J l' : Outline Drawings POWER TRANSISTOR MODULE Features • High Current • High DC Current Gain Insulated Type aM bP tV Po *,t*1r1m U IT A N 0<n *q*u iv«l«nTl ! Applications • High Power Switching


    OCR Scan     		PDF 2DI200A-050 E82988 11S19^ 095t/R89 SRFE T460 LC1100 VEBo-10V

    agh 003

    Abstract: M210 TM25
    Text: 2DI150Z-1000 50A '< * 7 - POWER TRANSISTOR MODULE : Features • ffili/E • 7 U— High Voltage ') ' s ' ? ¥ < • ASO t — Kl*9/8i • Insulated Type • f f l i i l : A p p lic a tio n s • High Power • Including Free Wheeling Diode Excellent Safe Operating Area


    OCR Scan     		PDF 2DI15OZ-1OOU50A) agh 003 M210 TM25

    a 4514

    Abstract: transistor B414
    Text: 6 D I1 5 M - 1 2 0 is a '< * 7 — Y *7 > i * 7 > 9 d . — )\* : Outline Drawings POWER TRANSISTOR MODULE : Features 2G.5 7.5 14 7.5 IJ 7.5 16 • 3SS&ItS*''rSl'<' High Arm Short Circuit Capability • h F E A '^ l' High DC Current Gain 9 — t — K 1*1/ Including Free Wheeling Diode


    OCR Scan     		PDF l95t/R89 Shl50 a 4514 transistor B414