MAX3510
Abstract: MAX3510EEP
Text: 19-1398; Rev 2; 8/99 UAL IT MAN TION K A ET U E L H A S EV TA WS DA FOLLO Upstream CATV Amplifier Features ♦ Ultra-Low Power-Up/Down Transients, 7mV Typical at 59dBmV Output ♦ Single +5V Supply ♦ Output Level Ranges from <8dBmV to 64dBmV ♦ Gain Programmable in 1dB Steps
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59dBmV
64dBmV
-47dBmV
160kHz
-70dBmV
MAX3510
MAX3510
MAX3510EEP
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Untitled
Abstract: No abstract text available
Text: 19-1398; Rev 2; 8/99 UAL IT MAN TION K A ET U E L H A S EV TA WS DA FOLLO Upstream CATV Amplifier Features ♦ Ultra-Low Power-Up/Down Transients, 7mV Typical at 59dBmV Output ♦ Single +5V Supply ♦ Output Level Ranges from <8dBmV to 64dBmV ♦ Gain Programmable in 1dB Steps
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59dBmV
64dBmV
-47dBmV
160kHz
-70dBmV
MAX3510
MAX3510
VOUT14
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CSA748
Abstract: CSC1398 CSC1398A
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-220 Plastic Package CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER
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ISO/TS16949
O-220
CSC1398,
CSC1398A
CSA748
C-120
CSA748
CSC1398
CSC1398A
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CSA748
Abstract: CSC1398 CSC1398A d 1398
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR
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O-220
CSC1398,
CSC1398A
CSA748
C-120
CSA748
CSC1398
CSC1398A
d 1398
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748
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O-220
CSC1398,
CSC1398A
CSA748
C-120
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR
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PDF
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O-220
CSC1398,
CSC1398A
CSA748
C-120
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Untitled
Abstract: No abstract text available
Text: 19-1398; Rev 0; 10/98 > k i> j x iy k i Upstream CATV Amplifier e v a l u a t io n s av a \l ^b1^: Features The MAX3510 is a program m able pow er am plifier for use in CATV upstream applications. The device outputs up to 64dBm V continuous wave through a 2:1 (voltage
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59dBmV
64dBmV
-47dBmV
160kHz
-70dBmV
MAX3510
64dBm
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Untitled
Abstract: No abstract text available
Text: 19-1398; Rev 0; 10/98 > k i> jx iy k i Upstream CATV A m p lifie r « •s s ? The MAX3510 is a program m able pow er am plifier for use in CATV upstream applications. The device outputs up to 64dBm V continuous wave through a 2:1 (voltage ratio) transformer. It features variable gain controlled by
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MAX3510
64dBm
65MHz.
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Untitled
Abstract: No abstract text available
Text: CSC1398; CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier DIM A B C D E F G H J K L M N MIN MAX 16,51 10.67 4,83 0,90 1.15 1.40 3.75 3.88 2.29 2.79 2,54 3.43 0,56 12,70 14.73 6.35 2.92 2.03 31.24 7 DEG 14.42
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CSC1398;
CSC1398A
CSC1398,
CSA748
DDD113fl
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C1398
Abstract: No abstract text available
Text: CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier ¿It. M DIM A B C E F G H J K L M M MIN MAX 16.51 10.67 4,83 0,90 1.15 1,40 3,75 3,88 2.29 2.79 2,54 3,43 0,56 12,70 14,73 6,35 2,03 2,92 31,24 7 DEG
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CSC1398,
CSC1398A
CSA748
C1398
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d 1398
Abstract: 1398 CSA748 CSC1398 CSC1398A
Text: CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM A B C D £ F G H J K L M N MIN 14.42 9.63 3,56 MAX 16.51 10.67 4,83 0.90 1.15 1.40
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CSC1398,
CSC1398A
CSC1398A
CSA748
00011i3Ã
d 1398
1398
CSC1398
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PC9203
Abstract: PC638 PC6079 PC5671 PC160-1 PC44E PC9166 PC5303 C6650 PC9202
Text: HA RR IS S E M I C O N D S E C T O R 27E » • M3 D2 27 1 Q 0 2 0 b 5 4 1 H H A S T -2 & -O I Power Transistor Chips Chip type No. VcEOtSUS V)m ln. Iceo (í¿A) max. — — — — — PC44E PC44H P C 4 5 E* P C 45H * PC 1482 66 33 -66 -33 60 PC2102 PC3439
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PC44E
PC44H
PC2102
PC3439
PC3442
PC3585
PC3879
PC4036*
PC5038
PC5240
PC9203
PC638
PC6079
PC5671
PC160-1
PC9166
PC5303
C6650
PC9202
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tca150c
Abstract: 1j99 SOLITRON
Text: S O L I IR ON ÜLVILLÜ INC bl l ' v a _o_i »E|fl3t.aL0E ODOISST 4 ENGINEERING DEVICE SPECIFICATION NO. 6079/2N2697 SILICON TRANSISTOR GENERAL DESCRIPTION This device JLa an NPN Triple Diffused Planar Power Transistor packaged in an HD case, designed primarily for switching applications
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6079/2N2697
hF68602
DATEL2/26/62
tca150c
1j99
SOLITRON
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon High-Voltage Transistors BFN 24 BFN 26 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 25, BFN 27 PNP Type
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Q62702-F1065
Q62702-F976
OT-23
fl535b05
aE35hDS
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Untitled
Abstract: No abstract text available
Text: bbS3T31 QD2S 4bO S7b « A P X N AUER PHILIPS/DISCRETE BSP30 TO 33 b?E » JV SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in miniature plastic envelopes intended for application in thick and thin-film circuits. They are intended for use in telephony and general industrial applications.
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bbS3T31
BSP30
BSP30
BSP31
BSP32
BSP33
00354b3
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D 1398 Transistor
Abstract: k 1398 Transistor transistor AS 431 LB 121 NPN TRANSISTOR
Text: REVISIONS m ulticom p ALL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DCP # S PC-F005.DW G REV DOC. NO. S P C - F 0 0 5 DESCRIPTION DRAWN 1 447 RELEASED
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PC-F005
30MHz,
10kohm
2N930A
35C0743
SPC--F005
D 1398 Transistor
k 1398 Transistor
transistor AS 431
LB 121 NPN TRANSISTOR
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BFR183W
Abstract: No abstract text available
Text: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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Q62702-F1493
OT-323
900MHz
BFR183W
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D 1398 Transistor
Abstract: k 1398 Transistor
Text: REVISIONS m ulticom p A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DCP # SPC— F005.DWG REV DOC. NO. S P C -F005 DESCRIPTION DRAWN 1447 RELEASED
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-F005
ove002
20MHz
500mV,
2N2102
35C0687
-F005
D 1398 Transistor
k 1398 Transistor
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D 1398 Transistor
Abstract: k 1398 Transistor
Text: REVISIONS m ulticom p A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DCP # SPC—F005.DWG REV DOC. NO. S PC -F005 DESCRIPTION DRAWN DATE / / Effective: 7 / 8 / 0 2
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-F005
SPC--F005
20MHz
500mV,
2N3700
D 1398 Transistor
k 1398 Transistor
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D 1398 Transistor
Abstract: k 1398 Transistor
Text: REVISIONS multicomp A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DCP # REV DOC. NO. SPC—F005 DESCRIPTION DRAWN RELEASED BYF 1885 DATE / 02 0 3/0 6
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SPC--F005
100kH
2N4920
-F005
D 1398 Transistor
k 1398 Transistor
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N SD1398 ;U RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS 850 - 960 MHZ 24 VOLTS COMMON EMITTER OVERLAY GEOMETRY GOLD METALLIZATION P o u t = 6.0 W MIN. WITH 10.0 dB GAIN PIN CONNECTION 1 n O O DESCRIPTION The SD1398 is a gold metallized epitaxial silicon
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SD1398
SD1398
SD1423
SD1424.
7T2T237
0D7D21b
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K 2411
Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type
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3SK241
T0220F
K 2411
k2411
IX 3354
a699a
3SK2411
2Sa1950
T092L
2SB0774
3SK271
c 5019
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DIODE S3V 70
Abstract: DIODE S3V 52 MOSFET 6A irfmg50 IRFMG50 IRFMG50D LSE 0149
Text: Data Sheet No. PD-9.711A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG5Q N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFMG50D
IRFMG50U
O-254
mil-8-19s00
I-404
DIODE S3V 70
DIODE S3V 52
MOSFET 6A irfmg50
IRFMG50
LSE 0149
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D 1398 Transistor
Abstract: d 1398 BLV98 32Q1 ci 1404
Text: N AMER PHILIPS/DISCRETE 86D OLE 0 1398 D "d • bfci53Ii31 D013b3b 3 3 - ft A ~~ BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor In SOT-171 envelope intended for use in class-B operated base station transmitters in the 900 MHz communications band.
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bfci53Ii31
D013b3b
BLV98
OT-171
BLV98
D 1398 Transistor
d 1398
32Q1
ci 1404
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