TRA1000
Abstract: TRE0200 trd04
Text: TANTALUM LOW ESR SMD CAPACITORS TYPE 522Z Technical Data: All technical data relate to an ambient temperature of +25°C Capacitance Range: 1.5 µF to 470 µF Capacitance Tolerance: ±20%; ±10% Rated Voltage DC VR #+85°C: Category Voltage (VC) #+125°C:
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NX8560LJ-CC
Abstract: NX8560LJ303-CC NX8560LJ311-CC NX8560LJ318-CC NX8560LJ326-CC NX8560LJ334-CC NX8560LJ342-CC NX8560LJ350-CC NX8560LJ358-CC 10 gb laser diode
Text: PRELIMINARY DATA SHEET NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE IN BUTTERFLY PACKAGE NX8560LJ-CC WITH GPO CONNECTOR FOR 10 Gb/s DWDM APPLICATIONS FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR NEC's NX8560LJ-CC is an Electro-Absorption EA Modulator
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NX8560LJ-CC
NX8560LJ-CC
UL1581
NX8560LJ303-CC
NX8560LJ311-CC
NX8560LJ318-CC
NX8560LJ326-CC
NX8560LJ334-CC
NX8560LJ342-CC
NX8560LJ350-CC
NX8560LJ358-CC
10 gb laser diode
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YC358
Abstract: YC158 RESISTOR NETWORK SMD 10PIN YC358T ARRAY resistor Phycomp Components 2350 series xmxx MP 1008 es yageo Phycomp 2350 rna310
Text: 120 DATA SHEET ARRAY CHIP RESISTORS YC 158/358 10Pin/8R 5% sizes 0612/1225 Product specification – Nov 14, 2008 V.3 Supersedes Date of Mar. 06, 2003 RoHS compliant Product specification Chip Resistor Surface Mount YC SERIES
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10Pin/8R)
YC158/358
YC158
YC358
Pu-YC158
Yu-YC158
Pu-YC358
Yu-YC358
RESISTOR NETWORK SMD 10PIN
YC358T
ARRAY resistor
Phycomp Components 2350 series
xmxx
MP 1008 es
yageo Phycomp 2350
rna310
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YAGEO CHIP RESISTORS Mounting
Abstract: xmxx rna310 footprint RNA310
Text: 120 DATA SHEET ARRAY CHIP RESISTORS YC 158/358 10Pin/8R 5% sizes 0612/1225 Product specification – Nov 14, 2008 V.3 Supersedes Date of Mar. 06, 2003 RoHS compliant Product specification Chip Resistor Surface Mount YC SERIES
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10Pin/8R)
YC158/358
YC158
YC358
Pu-YC158
Yu-YC158
Pu-YC358
Yu-YC358
YAGEO CHIP RESISTORS Mounting
xmxx
rna310 footprint
RNA310
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Untitled
Abstract: No abstract text available
Text: Filename: tfs 1225.doc Version 1.4 VI TELEFILTER 24.08.2004 Development specification TFS 1225 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: Input: Output: 23 200 200 °C dBm Ω Ω Characteristics Remark: The minimum attenuation in the pass band is defined as the insertion loss amin. The nominal frequency fN is fixed at 1225 MHz without any tolerance or
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TPS capacitor
Abstract: TPSE336
Text: TPS Series III New Generation Low ESR A KYOCERA GROUP COMPANY Latest trends in circuit design of applications such as switch-mode power supplies, micro-processors, and digital circuits call for higher operating frequencies and smoother filtering. In order
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120Hz,
TPS capacitor
TPSE336
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Untitled
Abstract: No abstract text available
Text: TPS Series III New Generation Low ESR A KYOCERA GROUP COMPANY Latest trends in circuit design of applications such as switch-mode power supplies, micro-processors, and digital circuits call for higher operating frequencies and smoother filtering. In order
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perf1102
120Hz,
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MC100EP35
Abstract: No abstract text available
Text: MC10EP35, MC100EP35 3.3V / 5VĄECL JK Flip Flop The MC10/100EP35 is a higher speed/low voltage version of the EL35 JK flip flop. The J/K data enters the master portion of the flip flop when the clock is LOW and is transferred to the slave, and thus the outputs, upon a positive transition of the clock. The reset pin is
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MC10EP35,
MC100EP35
MC10/100EP35
r14525
MC10EP35/D
MC100EP35
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Untitled
Abstract: No abstract text available
Text: Surface Mount High Pass Filter 50W THP-1225+ 1225 to 4000 MHz The Big Deal Small size 0.25" X 0.25" X 0.10" Good matching Low insertion loss CASE STYLE: GQ1018 Product Overview THP-1225+ is a 50W high pass lter fabricated using SMT technology. This high pass lter covers from 1225 to
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THP-1225+
GQ1018
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KP35
Abstract: MC100EP35 code KP35 KEP35 EL35 HP35 MC100 MC10EP35
Text: MC10EP35, MC100EP35 3.3V / 5VĄECL JK Flip-Flop The MC10/100EP35 is a higher speed/low voltage version of the EL35 JK flip–flop. The J/K data enters the master portion of the flip–flop when the clock is LOW and is transferred to the slave, and thus the outputs, upon a positive transition of the clock. The reset pin is
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MC10EP35,
MC100EP35
MC10/100EP35
HEP35
r14525
MC10EP35/D
KP35
MC100EP35
code KP35
KEP35
EL35
HP35
MC100
MC10EP35
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Untitled
Abstract: No abstract text available
Text: Surface Mount High Pass Filter 50Ω THP-1225+ 1225 to 4000 MHz The Big Deal • Small size 0.25" X 0.25" X 0.10" • Good matching • Low insertion loss CASE STYLE: GQ1018 Product Overview THP-1225+ is a 50W high pass filter fabricated using SMT technology. This high pass filter covers from 1225 to
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THP-1225+
GQ1018
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sot251
Abstract: No abstract text available
Text: MA4EX240L-1225 M /A -C O M Silicon Double Balanced HMIC Mixer 1700 - 2500 MHz Features • • • • • • /M * K O V 1 ^ W F F & Microwave Products SOT-25 Outline Low Cost Miniature Plastic Package Low Conversion Loss: 6.4 dB at 2100 MHz 7.4 dB at 2400 MHz
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MA4EX240L-1225
OT-25
MA4EX240L-1225
sot251
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4CMT
Abstract: circuit diagram of 3 bit magnitude comparator wit DB1D C1205A ADC1205CCJ-1
Text: ADC1205/ADC 1225 33 National ÆM Semiconductor ADC1205/ADC1225 12-Bit Plus Sign jitP Compatible A/D Converters G e n e r a l D e s c r ip t i o n K e y S p e c i f i c a t io n s The ADC1205 and ADC1225 are CMOS, 12-bit plus sign successive approximation A /D converters. The 24-pin
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ADC1205/ADC
ADC1205/ADC1225
12-Bit
ADC1205
ADC1225
24-pin
13-bit
28-pin
4CMT
circuit diagram of 3 bit magnitude comparator wit
DB1D
C1205A
ADC1205CCJ-1
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Dallas 1225 AB
Abstract: No abstract text available
Text: D S1225AB/AD DALLAS SEMICONDUCTOR DS1225AB/AD 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • D ata is autom atically protected during power loss • Directly replaces 8K x 8 volatile static R AM
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S1225AB/AD
DS1225AB/AD
28-PIN
Dallas 1225 AB
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP3540 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET T L P 3 540 Unit in mm M EM O R Y TESTERS LOGIC 1C TESTERS DATA RECORDING EQUIPMENT 7 6 5 CT1 n_ n l~P MEASURING EQUIPMENT TLP3540 is a photorelay and consists of a GaAs infrared emitting diode optically coupled to a photo-MOSFET in a 8-pin DIP package.
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TLP3540
TLP3540
5X1010
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ADC120S
Abstract: ADC1205 ADC1225
Text: ADC1205/ADC 1225 mH CT1 National Semiconductor ADC1205/ADC1225 12-Bit Plus Sign juP Compatible A/D Converters General Description Key Specifications The ADC1205 and ADC1225 are CMOS, 12-bit plus sign successive approximation A /D converters. The 24-pin ADC1205 outputs the 13-bit data result in two 8-bit bytes,
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ADC1205/ADC1225
12-Bit
ADC1205
ADC1225
24-pin
13-bit
28-pin
ADC120S
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Untitled
Abstract: No abstract text available
Text: T O S H IB A THLY6416G1 FG-80,-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6416G1FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circuit board.
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THLY6416G1
FG-80
216-WORD
64-BIT
THLY6416G1FG
TC59SM716FT/FTL
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Untitled
Abstract: No abstract text available
Text: T O S H IB A THLY6480H1 FG-80#-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6480H1FG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circuit board.
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THLY6480H1
FG-80#
608-WORD
64-BIT
THLY6480H1FG
TC59SM716FT/FTL
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TC55V16100FT-12,-15 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16100FT is a 16,777,216-bit high-speed static random access memory SRAM organized as 1,048,576 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide
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TC55V16100FT-12
576-WORD
16-BIT
TC55V16100FT
216-bit
54-P-400-0
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Untitled
Abstract: No abstract text available
Text: T O S H IB A THLY6416G1 FG-80,-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6416G1FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circuit board.
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THLY6416G1
FG-80
216-WORD
64-BIT
THLY6416G1FG
TC59SM716FT/FTL
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Untitled
Abstract: No abstract text available
Text: THLY6480H1 FG-80f-80L T O S H IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6480H1FG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circuit board.
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LY6480H1
FG-80
64-BIT
THLY6480H1FG
608-word
TC59SM716FT/FTL
-80/-80L
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a3s marking
Abstract: EB1734 T25-17 RD-91 weight 20asp
Text: 3QE ]> V# • 7TSTB37 003103b b ■ SCS TH O M SO N [^DOœiLEKgTr^OIMDOi 1 '¿ S = > -\ TODV 125 / 1225 S 6 S-THOMSON ALTERNISTORS ■ di/dt c > 88 A/ms (400 Hz) ■ INSULATING VOLTAGE : 2500 (t < 1 mn - F = 50 Hz) ■ UL RECOGNIZED (EB1734) V rms a APPLICATIO N S
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003103b
EB1734)
a3s marking
EB1734
T25-17
RD-91 weight
20asp
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MC1381
Abstract: No abstract text available
Text: Order this data sheet by MC1381/D ^ M O T O R O L A SEMICONDUCTORS MC1381 P.O. B O X 20912 • P H O E N IX , A R IZ O N A 85036 Product Preview MULTIMODE MONITOR HORIZONTAL, VERTICAL, AND VIDEO COMBINATION PROCESSOR The MC1381 includes all the signal processing functions for a
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MC1381/D
MC1381
MC1381
C62222
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Untitled
Abstract: No abstract text available
Text: / = T S G S -T H O M S O N * 7 M, TO DV 625 — > 1225 ALTERNISTORS FEATURES • HIGH COMMUTATION : > 88 A/ms 400Hz ■ INSULATING VOLTAGE = 2500V(rm S) (UL RECOGNIZED : EB1734) . HIGH VOLTAGE CAPABILITY : V DRM = 1200 V DESCRIPTION The TODV 625 —> 1225 use high performance
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400Hz)
EB1734)
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