marking JY sot-23
Abstract: bav199 JY marking marking JY JY diode BAV199
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAV199 SOT-23 SWITCHING DIODE FEATURES z This switching diode has the following features: z Low Leakage Current Applications Marking: JY Maximum Ratings @TA=25℃ Parameter
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OT-23
BAV199
OT-23
150mA
marking JY sot-23
bav199 JY marking
marking JY
JY diode
BAV199
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAV199 SOT-23 SWITCHING DIODE FEATURES z This Switching Diode has The Following Features: z Low Leakage Current Applications 1 3 Marking: JY 2 Maximum Ratings @Ta=25℃ Parameter
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OT-23
BAV199
OT-23
150mA
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JY diode
Abstract: marking code JY BAV199W JY marking
Text: BAV199W LOW LEAKAGE DOUBLE DIODE For low leakage current applications 3 Feature • Very low leakage current • Medium speed switching times 1 2 Marking Code: JY Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VRRM 85 V VR 85 V IF 160 140
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BAV199W
JY diode
marking code JY
BAV199W
JY marking
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diode marking code 4n
Abstract: JY diode JY marking E56140 JY-101-K JY-105-K JY-107-K LR35579 marking jyw marking code jyw
Text: POWER RELAY 1 POLE—3, 5 A MEDIUM LOAD CONTROL JY SERIES Lead Free / RoHS compliant* • FEATURES UL, CSA, VDE recognized High sensitivity and low power consumption ● High isolation ● Wide operating range ● DIL pitch terminals ● Plastic sealed type
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0514Please
diode marking code 4n
JY diode
JY marking
E56140
JY-101-K
JY-105-K
JY-107-K
LR35579
marking jyw
marking code jyw
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diode "jyw"
Abstract: JYW diode JY diode RELAYS FUJITSU 250VA E56140 relay 3a 30VDC
Text: FTR-K1 SERIES POWER RELAY 1 POLE - 3, 5A Medium Load Control JY Series n FEATURES UL, CSA, VDE recognized High sensitivity and low power consumption l High insulation l Wide operating range l DIL pitch terminals l Plastic sealed type, RTIII l Socket mounting type and socket available
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48VDC
diode "jyw"
JYW diode
JY diode
RELAYS FUJITSU
250VA
E56140
relay 3a 30VDC
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marking jyw
Abstract: jyw marking JY transistor JY-105-K JY-101-K jy5h JY marking JY marking transistor diode marking code 4n jy105k
Text: POWER RELAY 1 POLE—3, 5 A MEDIUM LOAD CONTROL JY SERIES • FEATURES ● ● ● ● ● ● ● ● UL, CSA, VDE recognized High sensitivity and low power consumption High isolation Wide operating range DIL pitch terminals Plastic sealed type Socket mounting type and socket available
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JY marking transistor
Abstract: JY diode E56140 JY-101-K JY-105-K JY-107-K LR35579 marking jyw JYW MARKING jy105k
Text: POWER RELAY 1 POLE—3, 5 A MEDIUM LOAD CONTROL JY SERIES • FEATURES ● ● ● ● ● ● ● ● UL, CSA, VDE recognized High sensitivity and low power consumption High isolation Wide operating range DIL pitch terminals Plastic sealed type Socket mounting type and socket available
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HC49/U5H
Abstract: No abstract text available
Text: HCJ/KA/A027E/2000 PDF's 17.04.2000 13:51 Uhr 25. Seite 25 0 Jy actual size SMQ series • SMU5 surface mount quartz crystal features • same pad layout as MG3A ■ extended temperature range SMU5 HC49/U5H - SMD type frequency 3.579545 MHz ~ 25.0 MHz fundamental AT-cut
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HCJ/KA/A027E/2000
HC49/U5H
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VDE 0435 time relay
Abstract: diode marking code 4n JY diode relay vde 0435 E56140 JY-101-K JY-105-K JY-107-K LR35579 marking jyw
Text: POWER RELAY 1 POLE— 3, 5 A MEDIUM LOAD CONTROL JY SERIES FEATURES n l l l l l l l l l n RoHS compliant UL, CSA, VDE recognized High sensitivity and low power consumption High isolation Wide operating range DIL pitch terminals Plastic sealed type Socket mounting type and socket available
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0514Please
VDE 0435 time relay
diode marking code 4n
JY diode
relay vde 0435
E56140
JY-101-K
JY-105-K
JY-107-K
LR35579
marking jyw
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JY-101-K
Abstract: JY marking transistor diode marking code 4n JY marking marking code 4n C150 JY-105-K JY-107-K LR35579
Text: POWER RELAY 1 POLE— 3, 5 A MEDIUM LOAD CONTROL JY SERIES FEATURES n l l l l l l l l l n RoHS compliant UL, CSA, VDE recognized High sensitivity and low power consumption High isolation Wide operating range DIL pitch terminals Plastic sealed type Socket mounting type and socket available
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0514Please
JY-101-K
JY marking transistor
diode marking code 4n
JY marking
marking code 4n
C150
JY-105-K
JY-107-K
LR35579
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GSN2020R2
Abstract: GE C150 GSV2020R2 GS-2020 GE. C150 G-3130 3412R gs2030m G-3120 QMFZ2
Text: File E56140 Vol. 1 Sec. 15 Page 1 and Report Issued: 7-2-85 Revised: 9-21-90 D E S C R I P T I O N PRODUCT COVERED: Component - Magnetic Motor Controllers for industrial application. Part No. JZ or JY followed by 4.5 through 48 , *may be followed by H, or W, may be
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E56140
101-K
JY101-K
GSN2020R2,
GSV2020R2,
GS-2020
G-2520.
3412R.
G-3120.
GSN2020R2
GE C150
GSV2020R2
GE. C150
G-3130
3412R
gs2030m
G-3120
QMFZ2
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Low Leakage Diode Array BAV 199 • Low-leakage applications • Medium speed switching times • Connected in series Type Marking Ordering Code tape and reel BA V 199 JY s Q62702-A921 Pin Configuration Package1) 3 ¿ -EH I SOT-23 EH ° DM07005
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Q62702-A921
OT-23
DM07005
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S763T
Abstract: JY marking transistor TRANSISTOR SOT-23 marking JE
Text: TELEFUNKEN ELECTRONIC Ô1C D • flc 200eib 000543Q L ■lALââ S 763 T Melectronic -r- jy- 2./ Creative Technologies Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range Features: >Low noise figures • High power gain Dimensions In mm
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000543Q
569-GS
S763T
JY marking transistor
TRANSISTOR SOT-23 marking JE
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HIU-766
Abstract: HIU 766 LQ080V3DG01 TV backlight inverter Transformers LCY-03094B D1601 harison HIU-766 LCY-03094
Text: PREPARED BY: DATE jy , SH A R P 6S ~ APPROVED BY: DATE MOBILE LIQUID CRYSTAL DISPLAY GROUP SHARP CORPORATION SPEC No. LCY-03094B FILENo. ISSUE March.29.2005 20 Pages PAGE APPLICABLE DIVISION MOBILE LCD DESIGN CENTER MOBILE LIQUID CRYSTAL DISPLAY GROUP SPECIFICATION
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LCY-03094B
LQ080V3DG01
LCY-03094
LCY-03094A
LCY-03094B-17
lcy-03094b-18
LQ080V30001
LCY-03094B-19
DH479
DH480^
HIU-766
HIU 766
LQ080V3DG01
TV backlight inverter Transformers
LCY-03094B
D1601
harison HIU-766
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Untitled
Abstract: No abstract text available
Text: TO SHIBA J1FWJ44L TOSHIBA 5CHOTTKY BARRIER RECTIFIER SCH OTT KY BARRIER TYPE 111 F W I d d i Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Low Forward Voltage ; Vp = 0.40 V (Max. • Average Forward Current : Ijr (AV)= 1*0A • Repetitive Peak Reverse Voltage : Vj^j^jy/[ = 30V
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J1FWJ44L
U1FWJ44L
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST R EVIS IO N S 00 AD LTR DESCRIPTION H1 REV PER ECO—1 0 —001 91 5 DATE DWN APVD 05M AR2010 JY SY 10SEP10 JS MQW
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AR2010
10SEP10
ECR-10-018652
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 64 M E G :X 4e X nnX A M MICRON I TECHNOLOGY, INC. Q ^ ^ jy j MT48LC16M4A1 /A2 -4 Meg x 4 x 4 banks MT48LC8M8A1/A2 - 2 Meg x 8 x 4 banks MT48LC4M16A1/A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM FEATURES • PCIOO-compliant, includes CONCURRENT AUTO PRECHARGE
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MT48LC16M4A1
MT48LC8M8A1/A2
MT48LC4M16A1/A2
096-cycle,
54-PIN
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mcr 5152
Abstract: UM82C450 csc 5151 rts 5136 um82c650 csc 5151 a T-15 UM82C550 UM82C550l
Text: UNICORN MI CR OEL ECTR ONIC S 5 ME D • TE7ô7ôa OOGQbS? T ■ % I jy / lr 5 ^ - _ r - ' 7 5 " - 3 ,? - 0 £ “ UM 82C550 Asynchronous Communications Element with FIFOs p r e l im in a r y Features: ■ Capable of running all existing UM82C450 software
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UM82C550
UM82C450
UM82CS50
UM82C650
UM82C550
UM82C550L
44LPLCC
mcr 5152
csc 5151
rts 5136
csc 5151 a
T-15
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Untitled
Abstract: No abstract text available
Text: i s jy u HI-REL HM 65681 5 Mill A1ATRA-HARRIS SEMICONDUCTOR 4K x 4 CMOS STATIC RAM JANUARY 1986 Pinout Features@ - ss°c to 125°C TO P VIEW • • • • • • • • • HIGH SPEED, FAST ACCESS TIME : 70/85/100 ns ASYNCHRONOUS STAND BY CURRENT : 500 pA max
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MIL-STD-883C
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1DEC2009
Abstract: No abstract text available
Text: THIS DRAWING IS U N PU B LIS H E D . COPYRIGHT 2 3 4 RELEASED FOR PUBLICATION - - BY TYCO ELECTRONICS CORPORATION. REVISIONS H ALL INTERNATIONAL RIGHTS RESERVED. LTR D ESC RIPTIO N N2 DATE REV PER ECR—0 9 —0 2 7 1 3 6 1DEC2009 DWN APVD JY SY D D C C
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1DEC2009
-10x2
0-24x2
48ROLLED
1DEC2009
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48lc
Abstract: 8M16 MT48LC16M8A2TG-8B MT48LC32M4A1 128MSDRAM MT48LC8M16A1TG
Text: ADVANCE 128 M E G :x4’c x r?i3x .l MICRON I TECHNOLOGY, INC. ^ ^ jy j MT48LC32M4A1 /A2 - 8 Meg x 4 x 4 banks MT48LC16M8A1 /A2 -4 Meg x 8 x 4 banks MT48LC8M16A1/A2 -2 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet revisions, please refer to the Micron
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096-cycle
128MSDRAM
54-PIN
48lc
8M16
MT48LC16M8A2TG-8B
MT48LC32M4A1
MT48LC8M16A1TG
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LT1841
Abstract: transistor 5B11 S8150 LT1241
Text: LIN EAR TECHNOLOGY CORP 53E XTun ^ TECHNOLOGY d m ssia 4 t,a ooobbai ^ a?T b i l t c S-,y - / / - jy LT1241 Series High Speed Current M ode Pulse Width Modulators F€flTUA€S DCSCRIPTIOn • Low Start-Up Current <250nA ■ 50ns Current Sense Delay ■ Current Mode Operation to 500kHz
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LT1241
250nA)
500kHz
UC1842
300mV
300kHz
T-5B-11
000bt
LT1841
transistor 5B11
S8150
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Untitled
Abstract: No abstract text available
Text: i jy?ow5w5ng W tfg g 1mSSmAn^imd _ 1_ 2 REVISIONS In H it ft r momribotura a r n h h r m m oont than bn whhoat Ra prior oonoert. A that no right la granM a ogy hriewnonon in thh rioounwnt sv u DESCRIPTION EEN DATE APPROVED Dec/07/10 1 ea on IP D -S U B TECHNICAL DATA
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Dec/07/10
50sistance
L717TW
21WA4
D90/07/H
L717TWC21WA4PMP3SVRM6
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Untitled
Abstract: No abstract text available
Text: 64 M E G :X 4e X nnX A M MICRON I TECHNOLOGY, INC. Q ^ ^ jy j MT48LC16M4A1 /A2 -4 Meg x 4 x 4 banks M T48LC8M 8A1/A2 - 2 Meg x 8 x 4 banks M T48LC4M 16A1/A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet revisions, please refer to the Micron
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MT48LC16M4A1
T48LC8M
T48LC4M
16A1/A2
54-PIN
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